Development of in-situ measurement method of sub-nm size particles in processing plasmas

加工等离子体中亚纳米尺寸颗粒的原位测量方法的开发

• 批准号: 08555019
• 负责人: WATANABE Yukio
• 金额: $ 7.62万
• 依托单位: KYUSHU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08555019/
• 关键词: cluster; particle; dust; photoemission; photo-ionization; photo-detachment; amorphous silicon; silane plasma; アモルファスシリコン; 光脱離; シリコン; サブナノ微粒子

It is important to understand growth kinetics of particles in processing plasmas, because they are harmful for fabrication of electronic devices and also promising as new materials. However, information on growth of particles below 10 nm in size is very limited because of lack of detection methods of such particles. In this study, we have developed a photon-counting laser-light-scattering (PCLLS) method detectable particles in 1-10 nm size and above 10^6cm^<-3> in density and a method (TPE-MI method), which is combined a threshold photoemission method with the microwave interferometry, detectable particles below a few rim in size and above 10^9cm^<-3> in density. By using these methods, we have revealed the following results regarding growth of particles in silane rf plasmas under so-called device-quality conditions : 1) density of sub-nm particles is by more than one order higher than the plasma positive ion density and most of the particles are neutral, 2) particles nucleate and grow around the plasma/sheath boundary where radicals are produced actively, 3) in the initial growth phase of particles, they grow due to deposition of polymerized species, which are originated from short lifetime SiH_2 radicals.

了解等离子体处理过程中粒子的生长动力学非常重要，因为它们对电子设备的制造有害，并且也有希望成为新材料。然而，由于缺乏对10纳米以下颗粒的检测方法，有关其生长的信息非常有限。在本研究中，我们开发了一种光子计数激光光散射（PCLLS）方法，可检测1-10 nm尺寸和密度10^6cm^<-3>以上的颗粒和方法（TPE-MI方法），该方法将阈值光电发射法与微波干涉测量法相结合，可检测尺寸在几圈以下、密度在10^9cm^-3以上的颗粒。通过使用这些方法，我们揭示了在所谓的器件质量条件下硅烷射频等离子体中粒子生长的以下结果：1) 亚纳米粒子的密度比等离子体正离子密度高一个数量级以上，并且大多数颗粒是中性的，2) 颗粒在等离子体/鞘边界周围成核并生长，自由基在该边界活跃产生，3) 在颗粒的初始生长阶段，它们由于聚合物物质的沉积而生长，而聚合物物质的沉积源于短寿命硅氢_2部首。

项目成果

Yukio Watanabe: "Contribution of short lifetime radicals to growth of particles in SiH_4 HF discharges and effects of particles on deposited films" J.Vac.Sci.Technol.A. 14,3. 995-1001 (1996)

Yukio Watanabe：“短寿命自由基对 SiH_4 HF 放电中颗粒生长的贡献以及颗粒对沉积薄膜的影响”J.Vac.Sci.Technol.A。

M.Shiratani and Y.Watanabe: "Detection of particles in plasmas by photon-counting laser-light-scattering method" OYO BUTURI. Vol.68 (in press). (1998)

M.Shiratani 和 Y.Watanabe：“通过光子计数激光光散射方法检测等离子体中的粒子” OYO BUTURI。

Sinichi Maeda: "Development of photon-counting laser-light-scattering method for size and density measurements of nano-particles in processing plasmas" Proc.4th Int.Conf.Reactive Plasma/16th Symp.Plasma Processes. 69-70 (1998)

Sinichi Maeda：“开发用于处理等离子体中纳米颗粒尺寸和密度测量的光子计数激光光散射方法”Proc.4th Int.Conf.Reactive Plasma/16th Symp.Plasma Processes。

白谷 正治: "フォトンカウンティングレーザ散乱法によるプラズマ中の微粒子計測" 応用物理. 68・5:印刷中. (1998)

Masaharu Shiratani：“使用光子计数激光散射法测量等离子体中的细颗粒”应用物理 68・5：出版中（1998 年）。

Tsuyoshi Fukuzawa: "Detection of partticles in rf silane plasmas using photoemission method" J.Appl.Phys.80,6. 3202-3207 (1996)

Tsuyoshi Fukuzawa：“使用光电发射方法检测射频硅烷等离子体中的粒子”J.Appl.Phys.80,6。