Generation of a Large Diameter and High Density Processing Plasma

产生大直径和高密度处理等离子体

基本信息

批准号：
08405006
负责人：
TACHIBANA Kunihide
金额：
$ 7.87万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08405006/
关键词：
Plasma Processing High Density Plasma Source Lower Hybrid Waves Wave Propagation Simulation Plasma Parameters Spatial Plasma Uniformity 空間分布特性

项目摘要

In order to meet requirements for the ULSI processing in the next generation, a new concept plasma source of large diameter and high density has been developed utilizing the wave propagation in the lower hybrid frequency range. First, the characteristics of wave propagation and power deposition in a plasma has been analyzed by a numerical simulation. It has been predicted that the radial position of the power deposition can be controlled by changing the longitudinal wave number or the external magnetic field strength. Based on this principle, a new source was designed, constructed and tested. The controllability of the radial profile of the plasma density was verified by a Langmuir probe measurement. The propagation of the lower hybrid waves was also proved from a measurement of the radial wave number measured by an electrostatic probe. The best uniformity of * 5% was attained over the diameter of 230 mm by optimizing the radial profile of the power deposition. The absolute plasma density in this plasma source is about a half of the typical value in a helicon wave plasma source, but the uniformity is much better.On the other hand, new plasma diagnostic methods have also been developed ; one is the VUV laser absorption technique for the measurement of F atoms and the other is the electron attachment mass spectroscopic technique for the measurement of polymerized species such as C_xF_y. These method were tested in various fluorocarbon plasmas currently used in the etching of SiO_2 layer in ULSIs together with our developed FT-IR phase modulated spectroscopic ellipsometry (PMSE) for the diagnostics of the surface chemical analysis. It is planned to test our new lower hybrid plasma source using these diagnostic tools for practical usage in the SiO_2 etching.

为了满足下一代超大规模集成电路(ULSI)加工的要求，利用较低混合频率范围内的波传播，开发了一种新概念的大直径、高密度等离子体源。首先，通过数值模拟分析了等离子体中波传播和功率沉积的特性。据预测，可以通过改变纵波数或外部磁场强度来控制粉末沉积的径向位置。基于这一原理，设计、建造并测试了一种新的源。通过朗缪尔探针测量验证了等离子体密度径向分布的可控性。通过静电探针测量的径向波数的测量也证明了下部混合波的传播。通过优化功率沉积的径向轮廓，在 230 mm 的直径范围内实现了 * 5% 的最佳均匀性。该等离子体源的绝对等离子体密度约为螺旋波等离子体源典型值的一半，但均匀性要好得多。另一方面，新的等离子体诊断方法也已被开发出来；一种是用于测量 F 原子的 VUV 激光吸收技术，另一种是用于测量 C_xF_y 等聚合物物质的电子附着质谱技术。这些方法在目前用于 ULSI 中 SiO_2 层蚀刻的各种氟碳等离子体以及我们开发的用于表面化学分析诊断的 FT-IR 相位调制光谱椭圆光度术 (PMSE) 中进行了测试。计划使用这些诊断工具测试我们新的较低混合等离子体源，以在 SiO_2 蚀刻中实际使用。