Development of Three Dimensional Nano Analysis Technique

三维纳米分析技术的发展

基本信息

批准号：
08044148
负责人：
TAKAI Mikio
金额：
$ 8.9万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for international Scientific Research
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08044148/
关键词：
ion microprobe focused ion beam TOF-SIMS nanometer structure 3 dimensional analysis technique nano fabrication vacuum micro electronics device beam induced process 真空マイクロエレクトロニクス素子ナノファブリケーションナノメートル3次元分析電界放射電子源プロセス誘起欠陥ナノ構造

项目摘要

Fabrication of structures with a size of a few tens of nanometer has drawn much interest in the application to the processing of a future generation of ultra large scale integration (ULSI) circuits and new devices in the field of mesoscopic area. Therefore development of non-destructive two and three dimensional analyses is quite important to realize such structures. A bilateral collaboration between Osaka University and Fraunhofer Institut fuer Integrierte Schaltungen has been performed to establish a three dimensional analysis technique with a nanometer resolution. An ion micro probe (or nuclear micro probe) technique using a focused ion beam for three dimensional analysis has been developed at Osaka University and compared with the destructive analysis technique such as TOF-SIMS being used at Fraunhofer Institut using the same samples. The ion micro probe could provide stoichiometry, crystallinity, and impurity distribution in a sample material without material removal techniques.Following results were obtained :1. Three dimensional structures such as vacuum micro electronics devices and basic structures for quantum effect devices, fabricated at Osaka University, have successfully been analyzed using non-destructive and destructive techniques. Advantage of the techniques developed in this study was demonstrated.2. Miniature structures fabricated at Fraunhofer Institute using beam induced chemical and physical processes could have been analyzed with a resolution of 80 nm using the techniques developed.3. Two and three dimensional mapping (tomography) techniques of material stoichiometry and impurity distribution have been developed using ion micro probes.

几十纳米尺寸结构的制造引起了人们对下一代超大规模集成（ULSI）电路和介观领域新器件的处理应用的极大兴趣。因此，无损二维和三维分析的发展对于实现此类结构非常重要。大阪大学和弗劳恩霍夫综合研究所之间进行了双边合作，以建立具有纳米分辨率的三维分析技术。大阪大学开发了一种使用聚焦离子束进行三维分析的离子微探针（或核微探针）技术，并与弗劳恩霍夫研究所使用相同样品的 TOF-SIMS 等破坏性分析技术进行了比较。离子微探针无需材料去除技术即可提供样品材料中的化学计量、结晶度和杂质分布。获得以下结果： 1．大阪大学制造的三维结构，如真空微电子器件和量子效应器件的基本结构，已成功使用非破坏性和破坏性技术进行了分析。论证了本研究所开发技术的优点； 2．弗劳恩霍夫研究所使用光束诱导化学和物理过程制造的微型结构可以使用所开发的技术以 80 nm 的分辨率进行分析。3。使用离子微探针开发了材料化学计量和杂质分布的二维和三维绘图（断层扫描）技术。