RISK ASSESSMENT OF SEMICONDUCTOR MATERIALS

半导体材料的风险评估

基本信息

批准号：
07670405
负责人：
INOUE Naohide
金额：
$ 1.47万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

项目摘要

Subacute toxicity of gallium arsenide (GaAs), indium arsenide (InAs)and arsenic trioxide (AS_2O_3) was studied in male Wistar rats by repetitive intratracheal instillation of these substances in suspension twice a week, a total of 16 times. As a control, rats were treated with vehicle, phosphate buffer solution. The cummulative body weight gain of rats in the InAs group was suppressed after the 15th instillation time, but not in the GaAs and AS_2O_3 group when compared with that in the control group. Concerning the mean relative organ weight, a significant increase in lung weight was observed in the GaAs, InAs or As_2O_3 group compared that in the control group. Those of the spleen and the kidney of InAs-treated rats significantly increased and that of the liver of InAs- or AS_2O_3- treated rats were significantly lowered compared with that in the control group. As to the histopathology of the lung, the foci of mild to severe inflammatory cell response was present in all groups. Severi … More ty of inflammation was increased in the InAs-treated rats. The lesion of mild to severe hyperplastic of alveolar or bronchiolar epithelium was observed in all groups except the control group. Most severe hyperplastic lesion with or without squamous cell metaplasia was seen focally involving the bronchioli or alveoli of the lung in InAs-treated rats. A significant decrease in sperm count and significant increase in the proportion of morphologically abnormal sperm were found in the epididymis in the GaAs gorup. It is indicated that GaAs disturbed the spermatid head transformation at the late spermiogenic phases and caused spermiation failure. InAs caused a sperm count decrease in the epididymis, though its testicular toxicity was relatively weak compared with that of GaAs.From these results, it would seem that GaAs and InAs particles induce pulmonary or testicular toxicity when instilled intratracheally to rats, and we feel that it is thus necessary to pay much attention to the exposure to semiconductor materials, such as GaAs or InAs particles. Less

砷化镓（GaAs）、砷化铟（InAs）和三氧化二砷（AS_2O_3）的亚急性毒性通过每周两次重复气管内滴注这些物质的悬浮液作为对照，大鼠。用载体、磷酸盐缓冲液处理后，InAs组大鼠的累积体重增加在第15天后受到抑制。与对照组相比，GaAs 和 AS_2O_3 组的肺重量没有显着增加。与对照组相比，InAs处理组大鼠的脾脏和肾脏显着升高，而InAs或AS_2O_3处理组大鼠的肝脏显着降低。在肺部的组织病理学中，所有组中都存在轻度至重度炎症细胞反应的病灶，在 InAs 治疗的大鼠中观察到轻度至重度增生的肺泡或细支气管上皮病变。在除对照组外的所有组中，在 InAs 治疗的大鼠中，最严重的伴有或不伴有鳞状细胞化生的增生性病变集中在肺的细支气管或肺泡上。发现GaAs组附睾中精子数量显着增加，形态异常精子比例显着增加，表明GaAs扰乱了精子发生后期的精子细胞头部转化，导致InAs导致精子数量减少。与 GaAs 相比，其睾丸毒性相对较弱。从这些结果来看，GaAs 和 InAs 颗粒在气管内滴注给大鼠时似乎会引起肺或睾丸毒性，因此，我们认为有必要特别注意半导体材料的暴露，例如砷化镓或砷化镓颗粒。