Multi-quantum-well polaritons in semiconductor nanocolumns

半导体纳米柱中的多量子阱极化子

• 批准号: 18340092
• 负责人: EMA Kazuhiro
• 金额: $ 10.62万
• 依托单位: Sophia University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18340092/
• 关键词: semiconductor; nanocolumn; GaN; exciton; polariton; quantum well; InGaN; biexciton; レーザー

The purpose of this project was to observe multi-quantum-well polariton coupling in GaN and InGaN/GaN nanocolumns. However we have not observed the polariton coupling, because quantum wells in the nanocolumns have different resonance energies. We have observed peculiar optical properties due to the nanocolumn morphology. We have studied specific optical properties of the GaN nanocolumn, focusing on the influence of the columnar shape.In photoluminescence (PL) spectrum of GaN nanocolumns with large diameters (〜100nm) there are two peaks attributed to free A-excitons (A) and bound excitons (I). With decreasing the diameter, higher-energy peaks whose energy positions correspond to B-excitons (B) and C-excitons (C) appear. In order to elucidate the origin of this, we calculated PL spectra of GaN nanocolumns considering the polaritonic effect of the excitons; i.e. considering propagation and radiation from both the top and the side surfaces of the nanocolumns. The results show that the peaks of B and C excitons become remarkable with decreasing the diameter because PL from the side surface becomes important.We also observed biexciton emissions in GaN nanocolumns with large diameters, and found that the biexciton binding energies are higher than that in bulk samples. Although the mechanism for the increase in the binding energy is not clear at the present, we suppose that it arises from spatial confinement effect due to the nanocolumn morphology.

这是在纳米colly子中观察到的量子井，这是在纳米序中观察到的量子井，这是在GAN/INGAN/GAN NANANANANCOUMN中观察到的多量子孔旋转的目的。 GAN纳米颜色发光（PL）的特性，具有大直径（〜100nm）的峰值，有两个峰归因于自由a-激子（a）和绑定的激子（i）阐明了这一点的起源，我们计算了nananoclats的极性激体的gan纳米序列的PLA。直径较大的纳米颜色比大量样品更高。

项目成果

InGaN/GaNナノコラム結晶の発光特性

InGaN/GaN纳米柱晶体的发光特性

• 发表时间: 2008
• 作者: J.;Inoue;J.Ishi-Hayase;井上 昌弥
• 通讯作者: 井上 昌弥

Ultrafast intersubband relaxation dynamics at 1.55μm in GaN/AIN multiple quantum disk nanocolumns

GaN/AlN 多量子盘纳米柱中 1.55μm 处的超快子带间弛豫动力学

• 发表时间: 2008
• 期刊: J.Luminescence 128
• 作者: S.;Okuma;K.Tanaka
• 通讯作者: K.Tanaka

GaNナノコラム集団における光の伝搬特性

GaN纳米柱群中的光传播特性

• 发表时间: 2007
• 作者: K.;Suzuki;猪瀬 裕太
• 通讯作者: 猪瀬 裕太

InNナノコラムにおけるバンドギャップとキャリア濃度の評価

InN 纳米柱中带隙和载流子浓度的评估

• 发表时间: 2007
• 作者: 福永 和哉;幸山 和晃;欅田 英之;江馬 一弘;神村 淳平;菊池 昭彦;岸野 克巳
• 通讯作者: 岸野 克巳

Ultrafast intersubband relaxation dynamics and coherent nonlinearity in bulk and waveguide structures of GaN/A1N multiple quantum wells

GaN/AlN 多量子阱体和波导结构中的超快子带间弛豫动力学和相干非线性

• 发表时间: 2006
• 作者: K.;Ikuno;J.;Hamazaki;K.;Tanaka;H.;Kunugita;K.;Ema;A.;Kikuchi;K.;Kishino
• 通讯作者: Kishino