Development of New Magnetron Plasma Source with Particle Energy Control
新型粒子能量控制磁控等离子体源的研制
基本信息
- 批准号:18540489
- 负责人:
- 金额:$ 2.12万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2006
- 资助国家:日本
- 起止时间:2006 至 2007
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Magnetron plasmas are widely used for deposition of mutilayer films such as optical coating, magnetic recording media, semiconductor fabrication, and so on. Recent progress of fidelity in film deposition processes, it is required to deposit film with very high smoothness and high interface quality in nano-scale. In the case of magnetic multilayer films (Pt/Co etc.) those exhibit magnetic anisotropy, it is known that smoothness and suppression of atom mixing at the interface drastically influence the magnetic property of the film. So far, however, such precise interface control of the multilayer films are considered to be very difficult by the sputter deposition process, and understanding of the mechanism and suppression of such phenomena is one of important issues.For the control of the multilayer interface property, we focus on high energy rare gas species in magnetron plasmas. In this project, we established the diagnostic technique of such high energy rare gas atoms by mass spectrom … More etry, and studied on the new technology to control such high energy atoms.At first, we evaluated energy distribution of Ar atom in conventional planer DC magnetron plasma by using a mass spectrometer with an energy analyzer. The obtained results are compared with an originally-developed simulation code and feasibility of the measurement technique was confirmed. Next, we proposed two magnetron sputter techniques, i.e., VHF-DC superimposed magnetron sputter plasma and cylindrical magnetron sputter plasma. From the AM- energy distribution measurement, it was confirmed that both VHF-DC and cylindrical magnetron plasmas can suppress high energy Ar atoms. Finally, VHF-DC magnetron plasma source was applied to the deposition of magnetic multilayer films. In the case of VHF-DC magnetron sputter deposition, magnetic multilayer film with very good magnetic property was observed with very thin layer thickness in order of a few nm. Such good film property suggest that the atom mixing at the film interface was suppressed by suppression of high energy Ar atom flux. Less
磁控管平原大体广泛用于沉积物膜的沉积,例如光涂层,磁性记录介质,半导体制造等。在膜沉积过程中的忠诚度最近的进展是,纳米级的胶片平滑度和高界面质量需要沉积膜。在磁性多层膜(PT/CO等)的情况下,暴露于磁各向异性的情况下,众所周知,在界面处的原子混合的平滑度和抑制会极大地影响膜的磁性。然而,到目前为止,通过溅射沉积过程,这种对多层膜的精确界面控制被认为非常困难,并且对这种现象的机制和抑制的理解是重要的问题之一。对于控制多层界面特性,我们将重点放在磁等离子体中的高能量稀有气体上。在这个项目中,我们通过质谱(质量光谱)建立了如此高能量稀有气体原子的诊断技术,并研究了新技术,以控制这种高能量原子。首先,我们通过使用能量分析仪的质谱仪使用质谱仪来评估常规Planer DC Magnetron等离子体中AR原子的能量分布。将获得的结果与最初开发的仿真代码进行了比较,并确认了测量技术的可行性。接下来,我们提出了两种磁控溅射技术,即VHF-DC叠加磁溅射等离子体和圆柱磁控溅射等离子体。从AM能量分布测量中,可以证实VHF-DC和圆柱磁控等离子体都可以抑制高能量AR原子。最后,将VHF-DC磁等离子体源应用于磁多层膜的沉积。在VHF-DC磁溅射沉积的情况下,观察到具有非常好的磁性特性的磁性多层膜,层厚度非常薄。如此出色的膜特性表明,通过抑制高能量AROM ATOM通量来抑制膜界面的原子混合。较少的
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Dependence of GMR in Co/Cu Multilayers on Sputtering Conditions
Co/Cu 多层膜中 GMR 对溅射条件的依赖性
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:C. C. Chen;Y. Sakashita;Y. Suzuki;T. Kato;S. Iwata;S. Tsunashima;H. Toyoda;K. Sasaki;H. Sugai
- 通讯作者:H. Sugai
Suppression of Super High-Energy Species by VHF-DC Superimposed Magnetron Sputter Plasma
VHF-DC 叠加磁控溅射等离子体抑制超高能物质
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Y. Sakashita;Y. Takagi;T. Kato;H. Toyoda;S. Iwata;S. Tsunashima;H. Sugai
- 通讯作者:H. Sugai
Numberical Simulation of Energetic Species in a VHF-DC Magnetron Plasma and Comparison with Experiments
VHF-DC 磁控管等离子体中高能粒子的数值模拟及与实验的比较
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:H.Toyoda;Y.Sakashita;Y.Takagi;H.Sugai
- 通讯作者:H.Sugai
Energy Control of Backscattered Rare Gas Atoms by VHF-DC Superimposed Magnetron Sputtering (Invited)
VHF-DC叠加磁控溅射背散射稀有气体原子的能量控制(特邀)
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Hirotaka Toyoda;Hideo Sugai
- 通讯作者:Hideo Sugai
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TOYODA Hirotaka其他文献
TOYODA Hirotaka的其他文献
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{{ truncateString('TOYODA Hirotaka', 18)}}的其他基金
Magnet-free microwave sputter deposition with uniform target utilization
具有均匀靶材利用率的无磁微波溅射沉积
- 批准号:
24654189 - 财政年份:2012
- 资助金额:
$ 2.12万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
High Precision Measurement of Plasma Density in Atmospheric Pressure Plasma
大气压等离子体中等离子体密度的高精度测量
- 批准号:
21540509 - 财政年份:2009
- 资助金额:
$ 2.12万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Surface Reaction Processes of Fluorocarbon Molecule and Fundamental Research on New Etching Process
氟碳分子表面反应过程及新型刻蚀工艺基础研究
- 批准号:
15540474 - 财政年份:2003
- 资助金额:
$ 2.12万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Lower-Temperature Deposition of Poly-crystalline Silicon Film by High-Density Plasma
高密度等离子体低温沉积多晶硅薄膜
- 批准号:
09558055 - 财政年份:1997
- 资助金额:
$ 2.12万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Diagnostic and Control of Silane Plasmas by Newlv Developed Radical Measurement Technique
利用新开发的自由基测量技术诊断和控制硅烷等离子体
- 批准号:
07680505 - 财政年份:1995
- 资助金额:
$ 2.12万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Basic study on lithium coating and plasma-surface processes
锂涂层和等离子体表面工艺的基础研究
- 批准号:
05680391 - 财政年份:1993
- 资助金额:
$ 2.12万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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