Diagnostic and Control of Silane Plasmas by Newlv Developed Radical Measurement Technique

利用新开发的自由基测量技术诊断和控制硅烷等离子体

基本信息

批准号：
07680505
负责人：
TOYODA Hirotaka
金额：
$ 1.28万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

项目摘要

From a industrial point of view, lowering deposition temperature of silicon films are needed because process temperature sometimes limits substrate materials and process throughput. This project has two main purposes, i.e., firstly to develop new radical detection technique for diagnostic and control of silane plasma, and secondly, to produce high quality hydrogenated amorphous silicon and/or polycrystalline silicon by using a inductively coupled silane plasma (silane ICP).1.As a new diagnostic technique of SiH3 radical in silane plasma, we have developed ultra-violet transmission spectroscopy, which can detect SiH3 radicals and particulates in a silane plasma at the same time. This powerful tool is very simple and easy to apply for most of plasma reactors.2.We also succeeded in depositing high photoconductivity hydrogenated amorphous silicon and polycrystalline silicon at relatively low substrate temperatures of 40 and 250ﾟC,respectively. It is found that high quality films are deposited at high plasma density and low pressure plasma conditions. These conditions are quite different from those for capacitively coupled plasmas, because high rf powers or low pressures always degrades film properties in capacitively coupled plasmas. Plasma diagnostic by mass spectrometry revealed that silane molecules are almost completely depleted in the ICP and ion flux to the substrate is dominant compared with neutral radical flux.

从工业角度来看，需要降低硅膜的沉积温度，因为工艺温度有时会限制基板材料和工艺产量，该项目有两个主要目的，即首先开发用于诊断和控制硅烷等离子体的新型激进检测技术。其次，利用电感耦合硅烷等离子体（硅烷ICP）生产高质量的氢化非晶硅和/或多晶硅。 1.作为硅烷中SiH3自由基诊断的新技术等离子体，我们开发了紫外透射光谱仪，可以同时检测硅烷等离子体中的SiH3自由基和颗粒物。这个强大的工具非常简单，易于应用于大多数等离子体反应器。2.我们还成功地进行了沉积。分别在40°C和250°C的相对较低的衬底温度下制备高光电导率的氢化非晶硅和多晶硅，发现在高等离子体下可以沉积高质量的薄膜。这些条件与电容耦合等离子体的条件有很大不同，因为高射频功率或低压总是会降低电容耦合等离子体中的薄膜性能。通过质谱诊断，硅烷分子几乎完全耗尽。与中性自由基通量相比，ICP 和到基底的离子通量占主导地位。