New Synthesis of TiC Films by Applying High Pressure and Electric Field to (Ti/Polyethylene) Film

(Ti/聚乙烯)薄膜高压电场合成TiC薄膜的新方法

• 批准号: 05555192
• 负责人: SUZUKI Katsuhiko
• 金额: $ 1.09万
• 依托单位: Miyagi National College of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555192/
• 关键词: Tic; New Synthesis; Electric Field; Pressure; Knoop Hardness; X Ray Diffraction; Properties of Wearing; Coefficient of Static Friction; 新しい合成法; 二次イオン質量分析; 微小硬度計

The new synthesis of TiC film has been studied by applying high pressure and electric field to the vacuum deposited (Ti and polyethylene (PE) ) films on the alloy tool steel as a substrate. TiC^+ ions were found by secondary ion mass spectroscopy on the surfaces of the samples synthesized under the condition of high pressure (0.392-9.8)/**10^5N and high electric field (3.75-7.5)*10^7V/m. These increased with sputtering of Xe^+ ion going from the surface to the substrate, while C^+ ions decreased. These results suggest the existence of TiC compound in synthesized films. Furthermore the strong TiC_2H^+ ions and the weak dimer ions of TiC_2 were also observed, which suggest that the synthesized films include the amorphous states of TiC.X ray diffraction showed hardly any peak of TiC in the films as synthesized. However the diffraction peak of TiC (lll) was detected in the sample thermal treated at 600ﾟC for 2days after synthesizing under 2.94*10^5N and minus-bias on Ti film side, and ones thermal treated at 780ﾟC for 4 days.Furthermore the measurement of the coefficient of static friction showed that the surface was very flat in the sample synthesized under 2.94*10^5N and minus-bias on Ti film side, and one of wearing did that this sample had also the good property of wearig.

以合金工具钢为基体上的真空沉积（钛和聚乙烯（PE））薄膜，通过施加高压和电场，研究了新的TiC薄膜的合成方法，并通过二次离子质谱分析发现了TiC^+离子。在高压(0.392-9.8)/**10^5N和高电场(3.75-7.5)*10^7V/m条件下合成的样品表面这些随着增加。 Xe^+离子从表面溅射到基底，而C^+离子减少。这些结果表明合成薄膜中存在TiC化合物，此外还观察到强TiC_2H^+离子和弱TiC_2二聚体离子。 ，这表明合成的薄膜包含非晶态的 TiC。X 射线衍射在合成的薄膜中几乎没有显示任何 TiC 峰，但有 TiC (III) 的衍射峰。钛膜侧在2.94*10^5N、负偏压下合成后，在600°C热处理2天的样品和在780°C热处理4天的样品中均检测到了静电系数。摩擦表明，在2.94*10^5N和Ti膜侧负偏压下合成的样品表面非常平坦，并且一次磨损表明这一点样品还具有wearig的良好特性。