Infrared Semiconductor Laser by Subband Transition at 3μmwavelength Band

3μm波段的子带跃迁红外半导体激光器

• 批准号: 15360196
• 负责人: SUSAKI Wataru
• 金额: $ 9.6万
• 依托单位: Osaka Electro-Communication University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360196/
• 关键词: Super lattice laser; Miniband Transition; AlInAs; InGaAs super lattice; AlGaAsSb barrier layer; MBE; InP substrate; Cascade laser; Infrared; ミニバンド間遷移

Lasing wavelength in semiconductor lasers between 2.5 and 4μm at room temperature has not been achieved yet so far. We have proposed a novel structure of a quantum cascade laser (QCL) to get the wavelengths. The structure is based on the AlInAs/GaInAs superlattice lattice matched to the InP substrate. Some of the AlInAs layers in the active quantum well layers are replaced by AlAsb and AlAs layers, with the conduction band offsets to the GaInAs well are 1.60 and 1.06eV, respectively, which is substantially larger than that of AlInAs, 0.52eV. These higher barriers prevent the electron overflow in the active quantum wells and enable it to attain the shorter lasing wavelength. We have also proposed a injectorless QCL to reduce the number of quantum well layers and improve the quantum efficiency for the 3μm wavelength band.Layer structures are designed by a numerical computer simulation developed for the structure. For example, two AlAsSb barriers and one AlAs barrier in the 4 quantum wells for the active layers is designed and have been indicated to be able to get the lasing wavelength less than 3μm. A injectorless structure at 3.2μm aimed for detection of CH_4 has also been designed.The growth conditions of AlInAs, GaInAs, AlAsSb lattice-matched to InP at same substrate temperature are investigated by adjusting the metal source flux from cells by precisely controlled cell heater temperature. The cell for Sb is a cracking type to get Sb_2 in spite of Sb_4, to improve the crystal quality. The lattice match condition has been measured by XRD. It is confirmed by the photoluminescence that the AlAsSb layer crystal quality has been remarkably improved with Sb_2 source.Layer structure of the conventional AlInAs/GaInAs cascade structure at 5.4μm and AlAsSb/GaInAs cascade structure at 3.2μm grown by MBE, and confirmed the thickness of each layer is precisely controlled within a monolayer by TEM observation.

到目前为止，尚未在室温下2.5至4μm之间的半导体激光器中的激光波长。我们已经提出了量子级联激光器（QCL）的新结构，以获取波长。该结构基于与INP底物相匹配的Alinas/Gainas超晶格晶格。活性量子井层中的某些Alinas层被ALASB和Alas层取代，而传统带偏移到Gainas孔的偏移分别为1.60和1.06EV，这大大比Alinas的0.52EV大。这些较高的屏障可以防止活性量子孔中的电子溢出，并使其能够达到较短的激光波长。我们还提出了一个无注射QCL，以减少量子孔的数量并提高3μM波长带的量子效率。层结构是由为结构开发的数值计算机模拟设计的。例如，设计了4个量子孔中的两个α屏障和一个Alas屏障，用于活性层，并已被指示能够使激光波长小于3μm。还已经设计了用于检测CH_4的3.2μm处注射结构。通过精确控制的细胞加热器的温度调整金属源通量，研究了在同一基板温度下在同一基板温度下与INP匹配的Alinas，Gainas，AlassB晶格的生长条件。 SB的单元格是一种裂纹类型，尽管SB_4具有SB_2，以提高晶体质量。晶格匹配条件已通过XRD测量。光覆盖证实，SB_2源已通过MBE生长的3.2μm时的常规Alinas/Gainas Cascade结构的SB_2源质量得到了显着提高。在3.2μm下，Alassb/Gainas Cascade结构由MBE生长，并证实了每个层的厚度在每个层的厚度。

项目成果

AlInAs/GaInAs/AlAsSb 超格子カスケードレーザ構造の設計

AlInAs/GaInAs/AlAsSb超晶格级联激光器结构设计

• 发表时间: 2005
• 期刊: 平成17年電気関係学会関西支部連合大会講演論文集
• 作者: 吉見哲生;田中将士;釣田隆弘;須崎渉
• 通讯作者: 須崎渉

GaAs基板InGaAs圧縮歪量子井戸レーザのキャリヤ再結合寿命

GaAs衬底InGaAs压应变量子阱激光器的载流子复合寿命

• 发表时间: 2006
• 期刊: 第53回応用物理学関係連合講演会講演予稿集
• 作者: 田中将士;須崎渉
• 通讯作者: 須崎渉

GaAs基板InGaAs圧縮歪量子井戸レーザーのキャリヤ再結合寿命

GaAs衬底InGaAs压应变量子阱激光器的载流子复合寿命

• 发表时间: 2005
• 期刊: 平成17年電気関係学会関西支部連合大会講演予稿集
• 作者: 田中将士;須崎渉
• 通讯作者: 須崎渉

Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs

具有在 GaAs 上生长的 InGaAsP 势垒/波导层的压缩应变 InGaAs 量子阱激光器的载流子寿命

• 发表时间: 2006
• 期刊: physica stat.(c) 3
• 作者: W.Susaki;S.Ukawa;M.Tanaka
• 通讯作者: M.Tanaka

W.Susaki, N.Ohno, et al.: "Determination of subband levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering"Physica E. 21. 793-797 (2004)

W.Susaki、N.Ohno 等人：“通过光反射和自激电子拉曼散射测定双量子阱 AlGaAs 激光器的子带能级”Physica E. 21. 793-797 (2004)