Disordering by Diffusion of Impurities in InGaAs/AlGa/GaAs Multiple Layrs and Its Application to Vertical Cavity Surface Emitting Micro Lasers

InGaAs/AlGa/GaAs多层中杂质扩散无序及其在垂直腔面发射微型激光器中的应用

基本信息

批准号：
08455168
负责人：
SUSAKI Wataru
金额：
$ 4.35万
依托单位：
Osaka Electro-Communication University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455168/
关键词：
micro laser heterostructure strained quantum well InGaAs surface emitting disorder diffusion multiple reflecting film

项目摘要

Conventional surface emitting laser is usually fabricated by mesa etching to reduce threshold current, and the electrode is formed on the part of the light emitting surface. These difficulties to integrate electrical elemental devices such as FETs and also reduce the area of the laser, which is not desirable for high density integration OEIC and 2 dimensional laser array monolithic chips.In the study, a novel structure based on TJS planar laser formed on semi-insulating substrate are proposed for the planar micro surface emitting laser fabricated by impurity disordering in superlattices. The main results obtained are as follows.(1) A novel structure for a planar micro surface emitting laser : The laser structure has lateral conducting n and p layrs, which is inserted between GaAs/InGaAs/GaAs strained quantum well layrs and AlAs/GaAs DBR multiple reflector layrs in the TJS laser structure. Carrier injection is uniform in the quantum wells which overcomes the Joule heating due to high se … More ries resistance through hetero barriers of AlGaAs/GaAs multiple reflectors as found in conventional structures.(2) Fabrication of the layr structure of the laser by MBE with water cooling method : The layr structure of the laser is strained single quantum well GaAs/InGaAs/GaAs sandwiched with 24 AlAs/GaAs quarter wavelength DBRs, which are formed by computer controlled MBE system with water cooling (not using liquid nitrogen cooling as in conventional one). A high efficient 0.98 mum photoluminescence for 8nm thick In_<0.2>Ga_<0.8>As is observed at room temperatire comparable with those of MOCVD growth.(3) Diffusion of Si and Zn under As pressure : Zn and Si are chosen as the impurities for disordering of the superlattices. The films for diffusion are deposited on wafers by electron beam from SiO_2 contained Zn or pure Si. After deposition, the wafers are annealed at 600 C for Zn and 850 C for Si diffusion. It is found that Si diffusion is enhanced under As pressure in an evacuated quartz tube, and the diffusion depth is 4mum for 20 hr at 850C.(4) Doping of conducting p and n GaAs layrs : n type conducting layrs by Si dopant and p type consuction layrs by Be doping are grown by the MBE,and the electron mobility exceed 2000 cm^2/V・s for typical donor conncenntration of 7x10^<17> cm^<-3> with the background other impurities less than 1x10^<17> cm^<-3>. Hole mobilities of Be-doping wafers are almost coincident with those of p-doping level between 10^<18> and 5x10^<18> cm^<-3>. These results show that the wafers will be used for lasers with carrier injection level of 10^<18> cm^<-3> or more.(5) Disordering of superlattices : Wafers with (24 AlAs/GaAs DBR) / (p-GaAs conducting layr) / (GaAs/InGaAs/GaAs strained double quantum wells) / (n conducting GaAs layr) / (5-10 AlAs/GaAs DBR), for micro laser structure are grown by the MBE with a computer controlled system successfully. Si bas been diffused under As pressure at 850C for 20 hr in an evaquated quartz tube, which followed by Zn diffusion at 600C for 4 hr using SiN films for diffusion masks. Both Si and Zn disordering have been observed by SEM,which are conirmed to be applied for fabrication of planar micro surface emitting laser with low threshold. Less

常规的表面发射激光通常是通过台化蚀刻来制造的，以减少阈值电流，并且电子在发光表面的一部分上形成。这些难以整合电气元件设备（例如FET）并减少激光器面积的困难，这对于高密度积分OEIC和2尺寸激光阵列整体芯片而言。在研究中，一种基于TJS平面激光器的新型结构是在Smalitation Surprate Surpration Franiatient for planaritation for planarited supperrate for nig the planation for Planar surand fration in Ingration for nim in Ingurantion for nim in Impurtration in Ingurantion for nim in Ingurantion in Impration in Ingur in Ingutratie spran surestrate。所获得的主要结果如下。（1）平面微型表面发射激光器的新结构：激光结构具有侧向导电N和P LAYR，该结构在GAAS/INGAAS/GAAS紧张的量子孔和Alas/gaas/gaas/gaas dbr之间插入TJS Laser结构中的GAAS/INGAAS/GAAS应变的量子井和GAAS DBR。 Carrier injection is uniform in the Quantum wells which overcomes the Joule heating due to high se … More ries resistance through hetero barriers of AlGaAs/GaAs multiple reflectors as found in conventional structures.(2) Fabrication of the layr structure of the laser by MBE with water cooling method: The layr structure of the laser is strained single quantum well GaAs/InGaAs/GaAs sandwiched with 24 AlAs/GaAs quarter波长DBR是由用水冷却的计算机控制的MBE系统形成的（不像常规氮一样使用液体氮冷却）。在室温下观察到的8nm厚IN_ <0.2> ga__ <0.8>的高效0.98 MUM光致发光，与MOCVD生长相当。（3）AS压力下的Si和Zn扩散为压力：Zn和Si作为延伸层的杂质的杂质。从SIO_2中的电子束包含Zn或Pure Si，将扩散的膜沉积在摇动上。沉积后，将波浪在600°C的锌和850°C下退火，用于Si扩散。发现在撤离的石英管中的AS压力下，Si扩散得到了增强，并且在850c时的扩散深度为4MUM，持续20小时。（4）掺杂导电P和N GAAS Layrs：N类型：Si popant和P型通过poptive layrs和P型的poptive the Election the Election -MBE的启动，并使P型的posection forme -mbe（mbe iptive layrs and offing layrs and ofertive y mbe and of the mbe soffient and ofertive y mbe and of the Mbe^copt and coft the MBE，MBE的动机，V 7x10^<17> cm^<-3>背景的典型供体连接其他杂质小于1x10^<17> cm^<-3>。掺杂波的孔迁移与p掺杂水平的孔迁移几乎是一致的，在10^<18>和5x10^<18> cm^<-3>之间。 These results show that the waves will be used for lasers with carrier injection level of 10^<18> cm^<-3> or more.(5) Disordering of superlattices: Wafers with (24 AlAs/GaAs DBR) / (p-GaAs conducting layr) / (GaAs/InGaAs/GaAs strained double quantum wells) / (n conducting GaAs layr) / (5-10 AlAs/GaAs DBR), for micro激光结构由MBE成功地通过计算机控制的系统生长。在850°C的压力下，将Si BAS扩散到20小时的石英管中，然后使用SIN膜进行扩散掩模，然后在600C下在600C下进行4小时的Zn扩散。 SEM都观察到Si和Zn无序无序，该SEM被用于用于制造具有低阈值的平面微表面发射激光。较少的