Spin-dependent transmission of highly polarized electrons through ferromagnet/semiconductor interfaces

高极化电子通过铁磁体/半导体界面的自旋相关传输

• 批准号: 15360023
• 负责人: SAKA Takashi
• 金额: $ 7.49万
• 依托单位: Daido Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360023/
• 关键词: spin polarization; spin filter; zincblend structure; ferromagnetic materials; photoelectron; circular polarization; GaAs; 垂直磁化; GaTbFe; 砒化ガリウム

A spin polarized electron beam emitted from a GaAs photocathode was injected into a thin ferromagnetic layer deposited on the GaAs photocathode and the spin-dependence of the transmission through the ferromagnet/semiconductor interface was investigated. Polarized electrons with opposite spin-polarizations were excited by irradiating with circularly polarized photons of opposite polarity. The ferromagnetic film was a 3nm thick layer of GdTbFe, and a thin oxide layer (2nm) was inserted between the film and the photocathode, which resulted in tunneling transmission of the electrons. After deposition, the film was magnetized in the direction perpendicular to the surface. Photo-currents with opposite spin polarizations were measured at room temperature. For electrons with the same polarization as that of the ferromagnetic films, the current was enhanced, while, on the other hand, the current was reduced in the case of the opposite polarization. In the present experiment, a p-GaAs substrate was used as the photocathode, and therefore the polarization of the photoelectrons was estimated as approximately 30〜35%. If a photocathode with a GaAs/GaAsP strained superlattice is used, a much clearer dependence is anticipated because polarization of more than 85% is expected.

研究了从GAAS光导导体发出的自旋极化电子光束被注入沉积在GAAS光电上的薄铁磁层中，并研究了通过Ferromagnet/半导体界面传播的自旋依赖性。具有相反自旋极化的极化电子通过用相反极性的圆极化照片照射。铁磁膜是3nm厚的GDTBFE层，在膜和光电阴极之间插入了薄薄的氧化物层（2nm），从而导致电子的隧道传播。沉积后，将薄膜沿垂直于表面的方向磁化。在室温下测量具有相反自旋极化的照片电流。对于具有与铁磁膜相同的极化的电子，电流得到了增强，另一方面，在相反极化的情况下，电流减少了。在本实验中，将P-GAAS底物用作光电极，因此光电子的极化估计约为30-35％。如果使用具有GAAS/GAASP紧张的超级晶格的光电对，则预计会有更明显的依赖性，因为预计极化会超过85％。

项目成果

Magneto current of magnetic tunnel transistors employing various Schottky junctions

采用各种肖特基结的磁隧道晶体管的磁电流

• 发表时间: 2005
• 期刊: J.Magn. & Magn.Mat. 286
• 作者: T.Hirose;Y.Fujiwara;M.Jimbo;T.Kobayashi;S.Shiomi
• 通讯作者: S.Shiomi

スピン偏極電子源

自旋极化电子源

• 发表时间: 2008

Magnetoresistance Effect of Co/AIO[x]/NiFe/Au/n-Si Diode Structure

Co/AIO[x]/NiFe/Au/n-Si 二极管结构的磁阻效应

• 发表时间: 2003
• 期刊: Japan. J. Appl. Phys. 42
• 作者: 坂 貴;加藤俊宏;堀中博道 ほか16名;神保睦子 ほか5名
• 通讯作者: 神保睦子 ほか5名

Magneto current of magnetic transistors employing various Schottky junctions

采用各种肖特基结的磁性晶体管的磁电流

• 发表时间: 2005
• 期刊: J. Magn. & Magn. Mat. 286
• 作者: T.Hirose;Y.Fujiwara;M.Jimbo;et al.
• 通讯作者: et al.

坂 貴, 加藤俊宏, 堀中博道ほか16名: "高い偏極度、量子効率を併せ持つGaAs-GaAsP系歪み超格子フォトカソードの開発"第28回リニアック技術研究会資料. (2003)

Takashi Saka、Toshihiro Kato、Hiromichi Horinaka 等 16 人：“具有高偏振和量子效率的 GaAs-GaAsP 应变超晶格光电阴极的开发”第 28 期直线加速器技术研究组材料（2003 年）。