Fundamental Research on Spin-filter with highly Spin-polarized Electrons

高自旋极化电子自旋滤波器的基础研究

• 批准号: 12650328
• 负责人: SAKA Takashi
• 金额: $ 2.05万
• 依托单位: DAIDO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650328/
• 关键词: Spin Polarization; Spin-filter; GaAs; Farromagnetism; Photo-electron; Circular Polarization; スピンフィルター

Development of spin-polarized electron sources : Spin-polarized electron sources with GaAs-GaAsP strained supperlattice were developed. The quantum efficiency of 0.7% as well as the polarizability of 77% has been obtained or the quantum efficiency of 0.3% as well as the polarizability of 80% has been obtained. Another type of sources has been studies with bulk GaAs. In this case electrons are excited by absorbing two photons of circularly polarized laser. By the selection rule, only electrons of a definite spin direction are selectively excited. The initial polarization of the excited electrons was estimated to be 86% from the measurement of the polarization of the luminescence.Development of spin-filter. A ferromagnetic thin film of GdTbFe was deposited on a GaAs substrate by the sputtering method. The film was magnetized perpendicularly to the film. Then, the spin-polarized electrons were excited in the substrate and injected in the film. The photo currents were measured under the condition that the spin direction of the electrons excited is parallel or anti-parallel to the direction of the magnetization. The clear effect of the filter by the ferromagnetic film was observed.

自旋偏振电子源的开发：开发了带有GAAS-GAASP紧张的晚餐的自旋极化电子源。已经获得了0.7％的量子效率以及77％的极化效率，或者获得了0.3％的量子效率以及80％的极化性。另一种类型的来源是对散装GAA的研究。在这种情况下，通过吸收两个圆形极化激光器的光子来激发电子。通过选择规则，只有确定自旋方向的电子被选择性地激发。激发电子的初始极化估计为86％，其发光的极化。自旋滤波器的开发。通过溅射方法将GDTBFE的铁磁薄膜沉积在GAAS底物上。这部电影被垂直于电影的磁场化。然后，自旋偏振电子在底物中受到激发并注入膜中。光电流是在激发电子的自旋方向平行或抗磁化方向的条件下测量的。观察到了铁磁性膜对过滤器的明显影响。

项目成果

T.Saka,T.Kato, et al.: "Spin-Polarized Electron Sources with GaAs-GaAsP Superlattices for Surface Analyses"Surface Science. 454-456. 1042-1045 (2000)

T.Saka、T.Kato 等人：“用于表面分析的 GaAs-GaAsP 超晶格的自旋极化电子源”表面科学。

T.Nishitani, et al.: "Development of Spin Polarized Electron Photocathodes : GaAs-GaAsP Superlattice and GaAs-AlGaAs Superlattice with DBR"AIP Conf. Proc. 570, 14^<th> International Spin Physics Symposium ; Workshop on Polarized Electron Sources and Polar

T.Nishitani 等人：“自旋极化电子光电阴极的开发：GaAs-GaAsP 超晶格和 GaAs-AlGaAs 超晶格与 DBR”AIP Conf。

E.Torikai, Y.Ikedo, A.Ihori, K.Nagamine, T.Saka, T.Kato: "Interaction of Mu with Spin Current in GaAs/GaAsP/Si"Proc.25^<th> International Conference on Physics of Semiconductors. 775-776 (2001)

E.Torikai、Y.Ikedo、A.Ihori、K.Nagamine、T.Saka、T.Kato：“GaAs/GaAsP/Si 中 Mu 与自旋电流的相互作用”Proc.25^<th> 国际物理学会议

坂貴: "スピン偏極電子線源"日本応用磁気学会誌. 25・1. 11-20 (2001)

Takashi Saka：“自旋极化电子束源”日本应用磁学学会杂志25・1（2001）。

T.Nishitani, et al.: "Development of Spin Polarized Electron Photocathodes : GaAs-GaAsP Superlattice and GaAs-AIGaAs Superlattice with DBR"AIP Conf.Proc.570, 14^<th> Intern. Spin Physics Symposium Workshop on Polarized Electron Sources and Polarimeters. 1

T.Nishitani 等人：“自旋极化电子光电阴极的开发：GaAs-GaAsP 超晶格和采用 DBR 的 GaAs-AIGaAs 超晶格”AIP Conf.Proc.570，第 14 期实习生。