Development of a high-sensitivity, high-resolution hydrogen detection technique and its application to hydrogen impurities in semiconductors

高灵敏度、高分辨率氢检测技术的开发及其在半导体中氢杂质的检测中的应用

• 批准号: 15310083
• 负责人: WILDE Markus
• 金额: $ 8.38万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15310083/
• 关键词: Quantitative hydrogen detection; Nuclear Reaction Analysis (NRA); Ion beam analysis (IBA); Semiconductor impurities; Surface analysis; Non-destructive depth profiling; 水素; 共鳴核反応; 深さ分解測定; 半導体; 酸化物; 界面

The project has thoroughly explored the viability of applying the 2^<nd> energy resonance of the ^1H(^<15>N, αγ)^<12>C reaction at 13.35 MeV for hydrogen depth profiling, aiming to achieve a sensitivity enhancement for the determination of low hydrogen concentrations in bulk samples by ^<15>N nuclear reaction analysis.By acquisition of excitation curves of the nuclear reaction the 6.385 MeV and 13.35 MeV from the same thin film specimen of 〜40 nm hydrogenated SiN on H-free crystalline Si(100) the investigation has experimentally verified that the integral reaction cross-sections at the broader 13.35 MeV resonance is (8.7±0.2) times as large as that of the more commonly applied sharper resonance at 6.385 MeV. Combined with the 〜10 % reduced stopping power for ^<15>N at the higher resonance energy, this gain of resonant γ-yield corresponds to a sensitivity improvement for the measurement of bulk H concentrations by a factor of 10.In order to enable the evaluation of sensitivity restricti … More ons imposed by non-resonant reaction yield from hydrogen in surface layers, the off-resonance cross section of the ^1H(^<15>N, αγ)^<12>C reaction in the entire energy range from 6-16 MeV was determined quantitatively. This information is indispensable to estimate the maximum surface hydrogen contamination levels that are tolerable in a given analytical task defined by the stopping power of the target material and the required probing depth. Practical recommendations to overcome possible limitations due to surface contamination have been devised.The study further revealed that background corrections of the γ-detector output are essential at ^<15>N ion energies exceeding 〜8 MeV due to emission of non-specific continuous γ-radiation. This effect has barely been pointed out in the respective literature so far. In addition the project has lead to the development of a versatile software package capable of simulating experimental NRA yield curves, which proved to be invaluable for the establishment of the off-resonant reaction cross section by enabling the distinction of resonant and non-resonant reaction yield. It furthermore significantly helps interpreting experimental NRA yield curves in terms of the underlying hydrogen depth profile. The developed methods of analysis are universal and considered to be applicable to a large number of NRA investigations benefiting from the enhanced sensitivity of the 13.35 MeV resonance. Quantitative analysis of surface hydrogen using a unique form of zero-point vibrational spectroscopy by NRA has also been achieved. Less

该项目已经彻底探索了（^15> n））^<2> C反应的2^<nd>能量共振，以实现YDREGEN深度分析，旨在通过通过确定通过通过确定通过通过确定大量样品中氢浓度的灵敏度。 ^<15> EAR REACTION THE 6.385 MEV AND 13.35 MEV from the thume think specimen of ~ 40 Nm Hydrogenated Sin on H------- FREE CRYSTALLINE SI (100) The Investigation Has Experimental Verified The Integral Reaction Cross-Sections at更广泛的13.35 MeV Resonan5 .7±0.2）倍于通常在6.385 MeV的较尖锐共振的大小，并在较高的共振能量下降低了 ^<15> n的降低。在评估敏感性限制的顺序中，散装H浓度的浓度为10倍…在能量范围内，从6-16 MEV确定了氢在表面层中的谐振反应产量。在针对目标材料定义的给定分析任务和所需的探测深度。 〜8迄今为止，由于发射非特异性连续γ辐射。抗反应的横截面通过使共鸣的谐振和共振反应的区别为yieeld。零点VIINT VIINT的独特形式也较少

项目成果

Quantitative coverage and stability of hydrogen-passivation layers on HF-etched Si(1-x)Ge(x) surfaces

HF蚀刻Si(1-x)Ge(x)表面氢钝化层的定量覆盖和稳定性

• 发表时间: 2005
• 期刊: Journal of Applied Physics. vol.98
• 作者: M.Wilde;K.Fukutani;S.Koh;K.Sawano;Y.Shiraki
• 通讯作者: Y.Shiraki

Evaluation of non-resonant background in hydrogen depth profiling via 1H(15N.ag) 12C nuclear reaction analysis near 13.35 MeV

通过 13.35 MeV 附近的 1H(15N.ag) 12C 核反应分析评估氢深度剖析中的非共振背景

• 发表时间: 2005
• 期刊: Nucl.Instr.and Meth.Phys.Res.B vol.232
• 作者: Markus Wilde;Katsuyuki Fukutani
• 通讯作者: Katsuyuki Fukutani

M.Wilde, K.Fukutani: "Low-temperature growth of Au on H-terminated Si(111)"Jpn.J.Appl.Phys.42 (2003) 4650. 42. 4650-4653 (2003)

M.Wilde、K.Fukutani：“Au 在 H 端接的 Si(111) 上的低温生长”Jpn.J.Appl.Phys.42 (2003) 4650. 42. 4650-4653 (2003)

Reactive gold thin films grown on iridium

在铱上生长的活性金薄膜

• 发表时间: 2005
• 期刊: Applied Surface Science. vol.246
• 作者: M.Okada;S.Ogura;W.A.Dino;M.Wilde;K.Fukutani;T.Kasai
• 通讯作者: T.Kasai

Evaluation of Non-Resonant Background in Hydrogen Depth Profiling via ^1H(^<15>N, αγ)^<12>C Nuclear Reaction Analysis near 13.35 MeV.

通过 13.35 MeV 附近的 ^1H(^ 15 N, αγ) ^ 12 C 核反应分析评估氢深度剖析中的非共振背景。

• 期刊: Nuclear Instruments & Methods in Physics Research B232
• 作者: M.Wilde;K.Fukutani
• 通讯作者: K.Fukutani