Distributions of impurity atoms in semiconductors analyzed by X-ray CTR scattering measurement

通过 X 射线 CTR 散射测量分析半导体中杂质原子的分布

• 批准号: 14550007
• 负责人: TABUCHI Masao
• 金额: $ 2.24万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550007/
• 关键词: X-ray CTR scattering measurement; distributions of impurity atoms; atomic scale distributions; Synchrotron radiation; Portable measurement system; Computer simulation of X-ray scattering; Alignment method of optics; Diffusion of In atoms; X線CTR散乱

For a further development of electronics and optoelectronics, new functions of materials are demanded. Thus, low-dimensional structures such as quantum wells have become to be adopted. In the quantum structures of a few ML thicknesses, the vagueness of the interface in the scale of only a few angstrom is no longer negligible. At the same time, the distributions of the impurity atoms which determine the electronic properties of semiconductors must be understood in the same scale. In this work, we proposed that the X-ray crystal truncation rod (CTR) scattering measurement can be used to investigate the distributions of atoms at the interfaces in atomic scale.We had conducted the simulation of the X-ray CTR scattering in detail to find the condition where the distributions of impurity atoms were detected more sensitively. The X-ray CTR scattering measurement need high intensity X-ray to investigate the distributions of impurity atoms. We also tried to develop a X-ray CTR scattering measurement system which was simple and portable in order to utilize any chance when the high intensity X-ray source was available. Based on the simulation and using the measurement system, the distribution of In atoms diffused in the GaAs layer was measured to show the ability of the measurement system and method, and the distributions were successfully investigated.

为了进一步开发电子产品和光电学，需要新的材料功能。因此，已经采用了诸如量子井之类的低维结构。在几个ml厚度的量子结构中，仅少数埃斯特罗姆的尺度中的界面的模糊性不再可以忽略不计。同时，必须以相同的规模理解确定半导体电子特性的杂质原子的分布。在这项工作中，我们提出，X射线晶体截断杆（CTR）散射测量可用于研究原子量表中界面处原子的分布。我们对X射线CTR散射进行了详细的模拟，以找到更敏感地检测到Indrurity原子的分布的条件。 X射线CTR散射测量需要高强度X射线以研究杂质原子的分布。我们还试图开发一个X射线CTR散射测量系统，该系统简单易移，以便在可用的高强度X射线源时利用任何机会。基于仿真和使用测量系统，测量了原子中的原子分布，以显示测量系统和方法的能力，并成功研究了分布。

项目成果

M.Tabuchi, Y.Takeda, H.Amano, I.Akasaki, 他: "Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited A1N buffer layers"Journal of Crystal Growth. 237-239. 1133-1138 (2002)

M.Tabuchi、Y.Takeda、H.Amano、I.Akasaki 等人：“在具有低温沉积 AlN 缓冲层的蓝宝石衬底上生长的 GaInN/GaN 层的原子尺度表征”《晶体生长杂志》237-239。 1133-1138（2002）

M.Tabuchi, H.Kyouzu, M.Takemi, Y.Takeda: "Composition dependence of InP/GaInAsP/InP interface structures analyzed by X-ray CTR scattering measurements"Applied Surface Science. 216. 526-531 (2003)

M.Tabuchi、H.Kyouzu、M.Takemi、Y.Takeda：“通过 X 射线 CTR 散射测量分析 InP/GaInAsP/InP 界面结构的成分依赖性”应用表面科学。

M.Tabuchi, M.Araki, Y.Takeda: "Thermal stability of GaAs/InAs/GaAs heterostructure studied by X-ray crystal truncatiojn rod scattering measurements"Japan Journal of Applied Physics. 41. 1090-1093 (2002)

M.Tabuchi、M.Araki、Y.Takeda：“通过 X 射线晶体截断棒散射测量研究 GaAs/InAs/GaAs 异质结构的热稳定性”日本应用物理学杂志。

M.Tabuchi, H.Kyouzu, M.Takemi, Y.Takeda: "Composition dependences of InP/InGaAsP/InP interface structures analyzed by X-ray CTR scattering measurements"Appl.Surf.Schi. 216. 526-531 (2003)

M.Tabuchi、H.Kyouzu、M.Takemi、Y.Takeda：“通过 X 射线 CTR 散射测量分析 InP/InGaAsP/InP 界面结构的成分依赖性”Appl.Surf.Schi。

M.Tabuchi, M.Araki, Y.Takeda: "Thermal stability of GaAs/InAs/GaAs heterostructure studied by X-ray crystal truncatiojn rod scattering measurements"Jpn.J.Appl.Phys. 41. 1090-1093 (2002)

M.Tabuchi、M.Araki、Y.Takeda：“通过 X 射线晶体截断棒散射测量研究 GaAs/InAs/GaAs 异质结构的热稳定性”Jpn.J.Appl.Phys。