Ultra-High Density Magnetic Memory Cells

超高密度磁存储单元

• 批准号: 14102029
• 负责人: YAMAMOTO Masahiko
• 金额: $ 65.89万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (S)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14102029/
• 关键词: information memory device; magnetic memory; magnetization process; magnetic state; antiferromagnetic layer; exchange coupling; magnetostatic energy; magnetoresistance effect; 漏洩磁束; 情報記録層; 環状メモリセル; 還流磁区; 静磁結合

We have investigated magnetic properties and magnetization processes of sub-micron magnetic memory cells in order to find a breakthrough that increases a density of MRAM (magnetic random access memory).(1) We have investigated method for recording magnetic memory. The magnetization direction of the asymmetric ring dots (material: 5-20 nm thick Ni-20at%Fe, diameter: 500-1000 nm) that have partly planed outer sides were controlled between clockwise and counterclockwise by in-plane magnetic fields, even though the ordinary ring dots needed the clockwise and counterclockwise magnetic fields caused by the perpendicular current.(2) We also have found that the cup-shaped magnetic memory cell required lower magnetic field to be recorded than the ring memory.(3) The Ni-Fe(10 nm)/Mn-Ir(10 nm) ring dot has fixed magnetization direction.(4) The information recorded in the magnetic memory can be detected using atomic force microscopy with conductive probe.

我们已经研究了亚微米磁性记忆细胞的磁性和磁化过程，以找到增加MRAM密度的突破（磁随机访问记忆）。（1）我们研究了记录磁记忆的方法。不对称环点的磁化方向（材料：5-20 nm厚的Ni-20at％Fe，直径：500-1000 nm）在平面磁场和平面内磁场之间的顺时针和逆时针之间控制了部分倾斜的外侧，即使平面环路需要顺时针和逆时针的磁场，也需要持续的磁场引起的磁场以及始终的频率磁场也是由始终发现的cubs the pragent the pragent。 （3）NI-FE（10 nm）/Mn-IR（10 nm）环点具有固定磁化方向。（4）可以使用带有导电探针的原子力显微镜检测到磁性记忆中记录的信息。

项目成果

Structural and magnetic properties of Dy/Cr multilayers grown by molecular-beam deposition

分子束沉积生长的 Dy/Cr 多层膜的结构和磁性

• 发表时间: 2006
• 期刊: IUMRS-ICA-2006
• 作者: Yasuhiro Kamada;Hitoshi Tanino;Toshiki Kingetsu;Masahiko Yamamoto
• 通讯作者: Masahiko Yamamoto

Temperature dependence of interlayer exchange coupling in Fe/Y and Fe/Y-H multilayers

Fe/Y 和 Fe/Y-H 多层膜中层间交换耦合的温度依赖性

• 发表时间: 2006
• 期刊: IUMRS-ICA-2006
• 作者: Yasushi Endo;Daisuke Takama;Tadashi Kaneko;Masahiko Yamamoto
• 通讯作者: Masahiko Yamamoto

Permalloy nanodots for binary logic operation

用于二进制逻辑运算的坡莫合金纳米点

• 发表时间: 2003
• 期刊: ACSIN-7
• 作者: S.A.Haque.M.Yamamoto;R.Nakatani;Y.Endo
• 通讯作者: Y.Endo

Transition between onion state and vortex state in exchange-coupled Ni-Fe/Mn-Ir asymmetric ring dots

交换耦合Ni-Fe/Mn-Ir不对称环点中洋葱态与涡旋态的转变

• 发表时间: 2006
• 期刊: J. Appl. Phys. 99・8
• 作者: Isao Sasaki;Ryoichi Nakatani;Yasushi Endo;Yoshio Kawamura;Masahiko Yamamoto
• 通讯作者: Masahiko Yamamoto

Binary Logic Gates by Ferromagrietic Nanodots : Toward Spin Computing

铁磁纳米点的二进制逻辑门：迈向自旋计算

• 发表时间: 2004
• 期刊: International Symposium on Advanced Structural and Functional Materials Design
• 作者: Masahiko Yamamoto;S.Anisul Haque;Ryoichi Nakatani;Yasushi Endo
• 通讯作者: Yasushi Endo