Study on Low Voltage Direct Current Electroluminescence Characteristics in ZnS/Si Hetero-junction Device and Related Fluorescent Materials

ZnS/Si异质结器件及相关荧光材料低压直流电致发光特性研究

基本信息

批准号：
13650356
负责人：
HIRATE Takashi
金额：
$ 1.86万
依托单位：
Kanagawa University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650356/
关键词：
Zinc Sulfide Silicon Hetero Junction Electroluminescence Thin Film Zinc Oxide

项目摘要

We studied on the electroluminescence characteristics of the ITO/ZnS:Mn/n-Si hetero-junction devices. The devices show the electroluminescence after the electrical forming treatment. The devices operate stably with direct current mode in room temperature and we could lower the initiating voltage of luminescence to about 7[V]. The brightness, however, is low. The result of this study has proved that the luminescence pattern is a set of the many small-sized luminescent points and that the distribution of these points is decided at the forming treatment. The luminance of these points increases with the increasing applied voltage. The number of these points does not change with the increasing voltage, however, and the number density of these points is low. Thus the brightness does not reach the practical value. It is necessary to investigate the mechanism of the generation of the luminescence point and to increase the density of the point.Further, we studied on the devices with the different structures; ITO/ZnS:Mn/p-Si, ITO/ZnS:Mn/Y2O3/n-Si or ITO/ZnS:Mn/ZnO/n-Si, and on the effect of the Nd:YAG laser irradiation on the Si surface to increase the brightness. As the results of these studies we observed that the device with the inserted layer of the oriented ZnO whiskers between the ZnS:Mn film and the Si substrate showed the excellent electroluminescence characteristics. We study on this device in the future.

我们研究了ITO/ZNS的电致发光特性：MN/N-SI异孔装置。这些设备在电气形成处理后显示了电致发光。设备在室温下以直流模式稳定运行，我们可以将发光的启动电压降低到约7 [V]。但是，亮度很低。这项研究的结果证明了发光模式是许多小型发光点的一组，并且这些点的分布是在形成处理中决定的。这些点的亮度随着施加的电压的增加而增加。但是，这些点的数量不会随着电压的增加而变化，并且这些点的数量密度很低。因此，亮度没有达到实际价值。有必要研究发光点产生的机理并增加点的密度。 ITO/ZNS：MN/P-SI，ITO/ZNS：MN/Y2O3/N-SI或ITO/ZNS：Mn/ZnO/N-SI，以及ND：YAG激光在Si表面上的效果：YAG激光辐照以增加亮度。作为这些研究的结果，我们观察到，Zns膜和SI底物之间带有定向ZnO晶须的装置显示出出色的电致发光特性。将来我们研究该设备。