High rate deposition of Mgh hardness carbide thin films using a dual source dc magnetron sputtering method

使用双源直流磁控溅射方法高速沉积 Mgh 硬度碳化物薄膜

基本信息

批准号：
13650097
负责人：
INOUE Shozo
金额：
$ 2.56万
依托单位：
Himeji Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650097/
关键词：
TiC carbide films magnetron sputtering multilayer films

项目摘要

Reactive sputtering is one of the most promising techniques for depositing carbide films, such as TiC, because it allows to deposit carbide coatings on the substrate at a low temperature. For depositing the carbide films by means of reactive sputtering, a pure metal target is usually sputtered by Ar and hydrocarbon mixed gas. In this case, the deposition rate should not be so high since the low-sputter-yield carbide is formed on the target surface. Control of the film composition is also difficult because of the so-called hysteresis problem. If the solid carbon target can be used as a carbon source for depositing carbide films, these disadvantages should be dispelled. In this study, we have tried to deposit TiC films by a dual source magnetron sputtering method. Furthermore, the Ti/C, TiC/C and TiC/Ti multilayer films have also been investigated as advanced hard coatings.Firstly, we have determined the deposition conditions for depositing stoichiometric TiC films by dual source magnetron sputtering. Then, Ti/C, TiC/C and TiC/Ti multilayer films with various periods were deposited onto glass substrates by an alternative sputtering. Ti/C and TiC/C multilayer structures, of which periods were shorter than 1.7nm, can be realized. On the other hand, TiC/Ti multilayer structure with the period less than 2.6nm can not be confirmed. The hardness of Ti/C multilayer films increases rapidly as the period decreases less than 2nm. The hardness of TiC/Ti increases monotonically with decreasing its period. On the contrary, the hardness of TiC/C films decreases as the period decreases because of micro-cracking. Among these multilayer structures, TiC/C films showed the highest thermal stability in vacuum. In the air atmosphere, on the contrary, TiC/Ti films revealed the highest stability. This should be caused by the instability of the pure carbon layer at above 600°C.

反应性溅射是沉积碳化物膜（例如TIC）的最有前途的技术之一，因为它允许在低温下将碳化物涂层沉积在底物上。为了通过反应性溅射来沉积碳化物膜，通常会通过AR和碳氢化合物混合气体溅射纯属靶。在这种情况下，由于在目标表面形成了低量输出器碳化物，因此沉积速率不应如此之高。由于所谓的滞后问题，对膜组成的控制也很困难。如果固体碳靶可以用作沉积碳化物膜的碳源，则应消除这些灾难。在这项研究中，我们试图通过双源磁控溅射方法沉积抽动膜。此外，还已经研究了Ti/C，TIC/C和TIC/TI多层膜。首先，我们已经确定了通过双源Magnetron Sptperting通过双源源磁孔沉积化学计量膜的沉积条件。然后，通过替代溅射将带有各个时期的TIC/C和TIC/TI多层膜沉积在玻璃基板上。可以实现TI/C和TIC/C多层结构（其中短于1.7nm）。另一方面，无法确认其周期小于2.6nm的TIC/TI多层结构。随着周期少于2nm的降低，Ti/C多层膜的硬度迅速增加。 TIC/TI的硬度随着其周期的减少而单调增加。相反，由于微裂纹，TIC/C膜的硬度随着周期的降低而降低。在这些多层结构中，抽动/C膜在真空中显示出最高的热稳定性。在空气中，在对比度中，抽动/Ti膜显示出最高的稳定性。这应该是由于纯碳层在600°C以上的不稳定引起的。