DEVELOPMENT OF NANO-CBN THIN FILM DEVICES WORKING AT HIGH-TEMPERATURES UNDER SEVERE CONDITIONS

高温恶劣条件下纳米CBN薄膜器件的研制

• 批准号: 13355028
• 负责人: YOSHIDA Toyonobu
• 金额: $ 32.2万
• 依托单位: THE UNIVERSITY OF TOKYO
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13355028/
• 关键词: CUBIC BORON NITRIDE THIN FILMS; ELECTRONIC PROPERTIES; HIGH TEMPERATURE ELECTRONICS; N TYPE DOPINGS; WIDE BANDGAP SEMICONDUCTOR; VISCO-ELASTICITY; RECTIFICATION CHARACTERISTICS; BORON NITRIDE NANO ARRAY; ドーピング; ワイドギャップ; 半導体特性; ブラズマCVD; スパッタリング

Increasing attention has been paid to the semiconductor devices that can work at high temperature. These devices will be applied to the control units for aircraft jet engines and giant power generators at higher operating temperatures, offering more efficient and reliable performances as the total system. Semiconductors with wide bandgap and high thermal conductivity can realize these applications in nature and GaN, SiC and Diamonds are listed as good candidates by many researchers. Among these, cubic boron nitride (cBN) has the widest bandgap in III-V and IV- group semiconductors as well as high chemical stability and thermal conductivity, and hence is considered to be the most suitable material for these applications. About 10 years ago, we succeeded to deposit such cBN thin films both by ICP-CVD and sputtering methods. Since then, we have been recognized as one of the leading groups. Based firmly on this proved track records in this field, important findings and advancements have be … More en achieved in this project.The first major achievement in this project is the fabrication of cBN thin films on silicon substrate suppressing amorphous interlayer formation. Such cBN growth only through the t-BN phase from silicon was realized by an invention of time-dependent-bias-technique (TDBT) using ICP-CVD method. Epitaxial growth of cBN on silicon will be a major breakthrough for the large area, high-quality synthesis of cBN in future, so this process will be essential to reach this goal.The discovery of the elastic deformation of boron nitride nano array (BNNA) in nano-scale is the second important finding, observed by the transmission electron microscopy (TEM). The peculiar deformation was caused in sp^2-bonded turbostratic boron nitride (tBN), built on a thin edge of silicon by ICP-CVD. The reversible minimum-bending curvature radius of the arrays was found to reach approximately 0.3 nm. Such an unique elastic deformation can not be explained by the conventional theory of deformation of ceramics and metals, and requires further investigation for thorough understandings of the mechanism. Still it can possess the potential of being applied in both MEMS and various nano-scale devices as shock absorber or relevant buffers.As the third major result, we have fabricated a prototype device of high temperature semiconductor with cBN to demonstrate the high potential and high quality of the films processed in a newly developed ultra-clean sputtering system. This device has the structure of heterojunction diode between cBN and silicon and has exhibited the rectification ratio over 10^4 at room temperature, capable of working up to 570K.From the above, it can be seen that considerable progress was made towards the overall goal of this project, and the results obtained so far clearly demonstrate the feasibility of this approach. Less

对可以在高温下工作的半导体设备的注意力越来越多。这些设备将应用于飞机喷气发动机和巨型发电机的控制单元，在较高的工作温度下，将提供更高效，更可靠的性能作为总系统。具有宽带的带隙和高温导电率的半导体可以实现自然界中的这些应用，而gan，SIC和钻石被许多研究人员列为良好的候选人。其中，立方硼（CBN）在III-V和IV-组半导体中具有最宽的带隙，以及高化学稳定性和高导电性，因此被认为是这些应用最适合这些应用的材料。大约10年前，我们成功地通过ICP-CVD和溅射方法沉积了此类CBN薄膜。从那以后，我们被公认为是领先的群体之一。基于该领域的这一证明的记录，重要的发现和进步是……在该项目中取得了更大的成就。该项目的第一个主要成就是在硅底物上制造CBN薄膜抑制了无定形间层组的形成。仅通过使用ICP-CVD方法的时间依赖性偏置技术（TDBT）的邀请，仅通过硅的T-BN相生长才能实现。 CBN在硅上的外在增长将是大面积的主要突破，将来CBN的高质量合成，因此实现这一目标至关重要。发现氮化硼纳米纳米阵列（BNNA）在Nano-Scale中发现了硼龙纳米阵列（BNNA）在Nano-Scale中的弹性变形，这是通过第二个重要的nano scale中的转移（通过传输型）。特殊的变形是由ICP-CVD固定在硅薄边缘的Sp^2键的涡轮增压硼（TBN）中引起的。发现阵列的可逆最小弯曲曲率半径达到约0.3 nm。这种独特的弹性变形不能用陶瓷和金属变形的常规理论来解释，并且需要进一步研究以彻底理解该机制。仍然有可能在MEMS和各种纳米级设备中应用于减震器或相关的缓冲区。作为第三个主要结果，我们已经制造了具有CBN的高温半导体的原型设备，以证明在新开发的超级净化系统中处理的膜的高潜力和高质量。该设备具有CBN和硅之间的异缘二极管的结构，并在室温下公开了10^4的整流比，能够运行高达570K。从上述过程中，可以看到，考虑到该项目的整体目标，并且结果明显地证明了这种方法的可行性。较少的

项目成果

K.Nose, K.Tachibana, T.Yoshida: "Rectification properties of layered boron nitride films on silicon"Applied Physics Letters. 83(5). 943-945 (2003)

K.Nose、K.Tachibana、T.Yoshida：“硅上层状氮化硼薄膜的整流特性”应用物理快报。

Yang HS, Iwamoto C, Yoshida T: "Nanostructures of the turbostratic BN transition layer in cubic BN thin films deposited by low-pressure inductively coupled plasma-enhanced chemical vapor deposition"Journal of Applied Physics. 91. 6695-6699 (2002)

杨华生，岩本C，吉田T：“低压电感耦合等离子体增强化学气相沉积立方BN薄膜中乱层BN过渡层的纳米结构”应用物理杂志。

Molecular dynamics study of deposition mechanism of cubic boron nitride

• DOI: 10.1016/s1468-6996(01)00011-0
• 发表时间: 2001-01
• 期刊: Science and Technology of Advanced Materials
• 影响因子: 5.5
• 作者: H. Koga;Y. Nakamura;Masahiko Watanabe;T. Yoshida

Rectification properties of layered boron nitride films on silicon

• DOI: 10.1063/1.1597744
• 发表时间: 2003-07
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: K. Nose;K. Tachibana;T. Yoshida

C.Iwamoto, H.S.Yang, S.Watanabe, T.Yoshida: "Dynamic and atomistic deformation of sp2-bonded boron nitride nanoarrays"Applied Physics Letters. 83(21). 4402-4404 (2003)

C.Iwamoto、H.S.Yang、S.Watanabe、T.Yoshida：“sp2 键合氮化硼纳米阵列的动态和原子变形”应用物理快报。