The invention of interstitial-type metal nitride thin films with opto-agilent function and their device fabrication

具有光安捷功能的间隙型金属氮化物薄膜的发明及其器件制备

• 批准号: 13305047
• 负责人: TAKAHASHI Naoyuki
• 金额: $ 31.62万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13305047/
• 关键词: Interstitial-type metal nitride; Thin film; Electron spin resonance; Opto-agilent; Device; Iron nitride; Indium nitride; Tin nitride; 窒化マンガン; 薄膜材料; 光磁気記録; 強磁性共鳴; 大気圧ハライド気相成長; 国際情報交換(英国:米国)

1.The invention of interstitial-type metal nitride thin films with opto-agilent function(1)Thin films of interstitial-type metal nitride were successfully prepared by original halide vapour phase growth under atmospheric pressure.(2)It was clarified, for the first time, that the thin films of interstitial-type metal nitride shows opto-agilent function.(3)By control of the nitric invasion quantity, it was found that the opto-agilent function of interstitial-type metal nitride thin films show the wavelength dependence and optical anisotropy.2.The investigation of opto-agilent function(1)The variation of refractivity, reflectivity and band-gap of interstitial-type metal nitride thin films originates from the change of the local structure in the film by the nitrogen invasion quantity. It was found the wavelength dependence of the function appears by these phenomena.(2)It was clarified by ESR and SQUIED measurement that the angle dependence of opto-agilent function derived from the magnetic anisotropy of unpaired electron in a film.3.The device fabrication of interstitial-type metal nitride thin film with opto-agilent function(1)The device fabrication of interstitial-type metal nitride thin films were successfully, such as optical switching and modulated light.From these results, the practical application as optics device and electron device in next generation may be possible using thin film of interstitial-type metal nitride with opto-agilent function.

1.在大气压力下，通过原始的卤化物蒸气相生长成功制备了具有光 - 含量功能（1）层型金属氮化金属的薄膜（1）层状金属氮化金属薄膜的发明。（2）它被澄清了。第一次，间质型金属氮化物的薄膜显示出光吸收功能。（3）通过控制硝酸盐浸润量。数量。被发现通过这些现象出现的功能的波长依赖性。（2）通过ESR和挤压测量来阐明光光功能的角度依赖于膜中未配对电子的磁各向异性。成功地制造了具有光 - 累积功能的间质型金属氮化金属薄膜（1）成功的间隙金属氮化金属薄膜的设备制造是成功的，例如光学开关和调制光。使用具有光功能功能的间质型金属氮化物的薄膜，可以使用下一代中的电子设备。

项目成果

T.Takahashi, N.Takahashi, N.Tamura, T.Nakamura, M.Yoshioka, W.Inami, Y.Kawata: "Growth of Fe_4N epitaxial layers displaying anomalous light reflectivity modulated by an external magnetic field."J.Mater.Chem.. Vol.11. 3154-3158 (2001)

T.Takahashi、N.Takahashi、N.Tamura、T.Nakamura、M.Yoshioka、W.Inami、Y.Kawata：“Fe_4N 外延层的生长显示出由外部磁场调制的异常光反射率。”J.Mater。

T.Nakamura, T.Takahashi, N.Takahasi, T.Kato, K.Furakawa, G.M.Smith, C.J.Oates, P C.Riedi: "High field FMR investigation of epitaxially grown Fe_4N films on a MgO(001) substrate."Electrochem. & Solid State Letts.. Vol.6. C146-C148 (2003)

T.Nakamura、T.Takahashi、N.Takahasi、T.Kato、K.Furakawa、G.M.Smith、C.J.Oates、P C.Riedi：“在 MgO(001) 衬底上外延生长 Fe_4N 薄膜的高场 FMR 研究。”

T.Nakamura, T.Takahashi, N.Takahasi, T.Kato, K.Furukawa, G.M.Smith, C.J.Oates, PC.Riedi: "High field FMR investigation of epitaxially grown Fe_4N films on a MgO(001) substrate."Electrochem.& Solid State Letts.. 6(10). C146-C148 (2003)

T.Nakamura、T.Takahashi、N.Takahasi、T.Kato、K.Furukawa、G.M.Smith、C.J.Oates、PC.Riedi：“MgO(001) 基板上外延生长 Fe_4N 薄膜的高场 FMR 研究。”Electrochem

N.Takahashi, M.Takekawa, T.Takahashi, T.Nakamura, M.Yoshioka, W.Inami, Y.Kawata: "Optical recording characteristics of tin nitride thin films prepared by an atmospheric pressure halide chemical vapor deposition."Solid State Science. Vol.5. 587-589 (2003)

N.Takahashi、M.Takekawa、T.Takahashi、T.Nakamura、M.Yoshioka、W.Inami、Y.Kawata：“常压卤化物化学气相沉积制备的氮化锡薄膜的光学记录特性。”

N.Takahashi, K.Terada, T.Nakamura: "Growth of tin nitride tin films by atmospheric pressure chemical vapor deposition using halide sources."J.Mater.Sci.. Vol.20. 227-229 (2001)

N.Takahashi、K.Terada、T.Nakamura：“使用卤化物源通过大气压化学气相沉积生长氮化锡锡膜。”J.Mater.Sci.. Vol.20。