Band Engineering on Alloy of Fluorides for Heterodevices

异质器件氟化物合金能带工程

基本信息

批准号：
12650304
负责人：
TSUTSUI Kazuo
金额：
$ 2.24万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

The purpose of this research was the artificial control of energy level of conduction band on fluoride alloys of composed of CaF_2 and CdF_2 which were epitaxially grown on Si substrates, and demonstrate feasibility of the technique to be applied for quantum effect hetero devices.First, the CaF_2 buffer layer which was expected to be necessary to obtain good Ca_xCd_<1-x>F_2 alloy on Si was investigated. It was found that the CaF_2 buffer layer was able to be thin down to two mono-layers keeping good crystallinity and morphology of overgrown Ca_xCd_<1-x>F_2 layers. The minimum thickness was fond to fit applications of various tunnel devices since electrons can tunnel the layers.The internal photon emission(IPE) analysis was carried out on the Au/Ca_xCd_<1-x>F_2/Si(111) diode structures, where photo emission current depending on wave length ofexiting light. As a result, it was shown that energy level of conduction bad edge of Ca_xCd_<1-x>F_2 was lineally changed depending on the composit … More ion of Ca_xCd_<1-x>F_2, for the first time. It was also confimied that the energy barrier of conduction bad edge of CaF2 for that of Si was 2.3 eV through the IPE measurement, and that the value was consistent with those obtained by X-ray photoelectron spectroscopy in the previous work From these results, it was indicated that band engineering on the fluoride alloy system, Ca_xCd_<1-x>F_2, was promising.Finally, double barrier resonant tunneling diodes (RTDs) in which the Ca_xCd_<1-x>F_2 was employed in the barrier layers were fabricated, and they were compared to the conventional diodes in which pure CaF2 was employed in the barrier layers. The RTDs using Ca_xCd_<1-x>F_2 barrier exhibited good negative differential current-voltage characteristics. Furthermore, higher current density in spite of thicker barrier kyer on the RTD using Ca_xCd_<1-x>F_2 barrier than those using pure CaF2 was observed, which indicated controllability of barrier height on the RTDs by composition of the fluoride alloy system. Less

这项研究的目的是对由CAF_2和CDF_2组成的氟化物合金能量水平的人为控制，这些氟化物合金是在SI底物上表达生长的，并证明要适用于量子效应的量子效应的技术的可行性。调查。发现CAF_2缓冲层能够稀薄到两个单层，并保持良好的结晶度和杂草丛生的ca_xcd_ <1-x> f_2层的形态。由于电子可以隧道隧道，因此最小厚度非常适合各种隧道设备的应用。内部光子发射（IPE）分析是在Au/ca_xcd_ <1xcd_ <1-x> f_2/si（111）二极管结构上进行的，在光发射电流的情况下，根据exiting Light的波长。结果，结果表明，CA_XCD_ <1-x> F_2的传导能量水平是根据复合物进行线性更改的，这是第一次的Ca_xcd_ <1-x> f_2的更多离子。还可以证实，通过IPE测量，CAF2的可导屏不良边缘通过IPE测量为2.3 eV，并且该值与X射线光电光谱频谱在以前的结果中获得的值一致，从这些结果中的工作中，ca_xcd__xcd__xcd_ <1--x-d double doubles douply wiresing wires.2 wirection dour.f _2 wir.2 （RTD）在屏障层中携带Ca_xcd_ <1-X> F_2，并将其与传统的纯CAF2进行比较。使用CA_XCD_ <1-X> F_2屏障的RTD暴露了良好的负差分电流 - 电压特性。此外，尽管使用CA_XCD_ <1-X> F_2屏障在RTD上具有较高的电流密度，但观察到了使用纯CAF2的屏障，这表明通过氟化物合金系统组成，RTD上的屏障高度的可控性。较少的