Growth, structural and optical properties of new concept tetrahedral crystals

新概念四面体晶体的生长、结构和光学性质

基本信息

批准号：
12650301
负责人：
ADACHI Sadao
金额：
$ 1.09万
依托单位：
Gunma University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

1.The following results were obtained on twin Grimm-Sommerfeld (GS) materials, ZnIn_2Te_4, ZnGa_2Te_4, and CdGa_2Te_4 :(1) Succeed in growing bulk twin GS crystals.(2) Succeed in obtaining bulk twin GS materials, although they contain crystalline components as inclusions.(3) It is shown that it is possible to prepare bulk amorphous and crystalline samples of optical grade by chemomechanical polishing. The optical properties of these materials are determined by spectroscopic ellipsometry.(4) The optical and dielectric properties of ZnIn_2Te_4 have been studied by performing band-structure calculation and by comparing these calculated results with the experimental data.(5) Succeed in measuring photoluminescence spectra of twin GS crystals.2. The temperature dependence of the critical-point parameters for the III-V compound semiconductor, GaP, and II-VI compound semiconductors, CdTe, ZnTe, CdS, and ZnO, have been determined by performing photoreflectance measurements. The electroreflectance measurements have also been performed on III-V semiconductor alloy Ga_<0.5>In_<0.5>P.3. Chemical treatment effects of silicon surfaces in TMAH (organic alkaline), NaF, NH_4HF_2 solutions, etc. have been studied using spectroscopic ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and contact-angle measurements. GaN and InN films have also been deposited on silicon substrates by reactive rf-magnetron sputtering. Properties of these III-V nitride films have been investigated using X-ray diffraction, spectroscopic ellipsometry, and atomic force microscopy.

1.在孪生格林-索末菲（GS）材料ZnIn_2Te_4、ZnGa_2Te_4和CdGa_2Te_4上获得了以下结果：（1）成功生长了块体孪生GS晶体。（2）成功获得了块体孪晶GS材料，尽管它们含有晶体(3) 结果表明，可以通过以下方法制备光学级大块非晶态和晶态样品：化学机械抛光。通过椭圆偏振光谱法测定了这些材料的光学性质。(4)通过能带结构计算并将计算结果与实验数据进行比较，研究了ZnIn_2Te_4的光学和介电性质。(5)成功测量了光致发光光谱双GS晶体.2。 III-V 族化合物半导体 GaP 和 II-VI 族化合物半导体 CdTe、ZnTe、CdS 和 ZnO 的临界点参数的温度依赖性已通过执行光反射测量来确定。还对III-V族半导体合金Ga_<0.5>In_<0.5>P.3进行了电反射测量。利用光谱椭圆光度术、原子力显微镜、X射线光电子能谱(XPS)和接触角测量研究了硅表面在TMAH（有机碱）、NaF、NH_4HF_2溶液等中的化学处理效果。 GaN 和 InN 薄膜也通过反应性射频磁控溅射沉积在硅衬底上。使用 X 射线衍射、光谱椭圆光度法和原子力显微镜研究了这些 III-V 族氮化物薄膜的特性。