Growth, structural and optical properties of new concept tetrahedral crystals

新概念四面体晶体的生长、结构和光学性质

基本信息

批准号：
12650301
负责人：
ADACHI Sadao
金额：
$ 1.09万
依托单位：
Gunma University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

1.The following results were obtained on twin Grimm-Sommerfeld (GS) materials, ZnIn_2Te_4, ZnGa_2Te_4, and CdGa_2Te_4 :(1) Succeed in growing bulk twin GS crystals.(2) Succeed in obtaining bulk twin GS materials, although they contain crystalline components as inclusions.(3) It is shown that it is possible to prepare bulk amorphous and crystalline samples of optical grade by chemomechanical polishing. The optical properties of these materials are determined by spectroscopic ellipsometry.(4) The optical and dielectric properties of ZnIn_2Te_4 have been studied by performing band-structure calculation and by comparing these calculated results with the experimental data.(5) Succeed in measuring photoluminescence spectra of twin GS crystals.2. The temperature dependence of the critical-point parameters for the III-V compound semiconductor, GaP, and II-VI compound semiconductors, CdTe, ZnTe, CdS, and ZnO, have been determined by performing photoreflectance measurements. The electroreflectance measurements have also been performed on III-V semiconductor alloy Ga_<0.5>In_<0.5>P.3. Chemical treatment effects of silicon surfaces in TMAH (organic alkaline), NaF, NH_4HF_2 solutions, etc. have been studied using spectroscopic ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and contact-angle measurements. GaN and InN films have also been deposited on silicon substrates by reactive rf-magnetron sputtering. Properties of these III-V nitride films have been investigated using X-ray diffraction, spectroscopic ellipsometry, and atomic force microscopy.

1.在双grimm-sommerfeld（GS）材料，Znin_2Te_4，Znga_2te_4和cdga_2te_4：（1）成功地增长了散装双子GS晶体。（2）成功地获得了散装双子GS材料，尽管它们含有晶体成分，但在构造的情况下，它可能会构成构成。通过化学力学抛光样品样品。这些材料的光学特性由光谱椭圆法确定。（4）已经通过执行带结构计算并将这些计算出的结果与实验数据进行比较。（5）成功测量了Twin GS Crystals.2。通过执行光触发式测量值确定了III-V复合半导体，GAP和II-VI化合物半导体，CDTE，ZNTE，CDS和ZnO的临界点参数的温度依赖性。电触及度测量也已在III-V半导体合金GA__ <0.5> in_ <0.5> p.3上进行。已经使用光谱椭圆法，原子力显微镜，X射线光电子光谱（XPS）和接触角测量值对TMAH（有机碱），NAF，NH_4HF_2溶液等硅表面的化学处理作用进行了研究。 GAN和INN膜也通过反应性RF-MAGNERTRON溅射沉积在硅底物上。已经使用X射线衍射，光谱椭圆法和原子力显微镜研究了这些III-V氮化物膜的性能。