Frustration between Ferro- and Antiferro-Electricity and its Application to Liquid Crystal Displays

铁电和反铁电之间的挫败及其在液晶显示器中的应用

基本信息

  • 批准号:
    12650010
  • 负责人:
  • 金额:
    $ 2.11万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2000
  • 资助国家:
    日本
  • 起止时间:
    2000 至 2001
  • 项目状态:
    已结题

项目摘要

The V-shaped switching has attracted attention because of its potential applications to fast-response AM-LCDs. Two companies have developed a group of materials, which are closely related to the prototyped antiferroelectric liquid crystals. This research aims at understanding what are essential to the emergence of the practically usable V-shaped switching. Two essentials are: ( 1 ) the frustration between ferro- and antiferro-electricity, and ( 2 ) the "biaxial anchoring", i.e. a tendency that the more easily polarizable short axis (intuitively, the averaged direction of phenyl ring planes) is liable to become rather perpendicular than parallel to the substrate plates. Since it is parallel to the tilt plane in the V-shaped switching materials, the melatopes may emerge parallel to an electric field even in ferroelectric SmC*, and the biaxial anchoring on polyimide aligning films plays an important role, destabilizing the SS states; the total anchoring becomes almost independent of the a … More zimuthal angle specifying the position on the SmC* tilt cone. The relatively weak anchoring due to rubbing must force to align directors. When the chiral twisting power is large, the distribution around the rubbing direction may become broad. The first essential, i.e. the frustration assures the extreme softness with respect to the tilting direction and hence the hysteresis-free characteristics by easily forming invisible microdomains in the whole switching range. The biaxial anchoring may destroy the antiferroelectric SmC_A* structure. The local director shows a variety of orientational distributions at the tip of the V; neither Langevin-like reotientation nor highly collective azimuthal angle rotation of in-layer directors is essential to the V-shaped switching. Extremely large spontaneous polarization and the resultant polarization charge stiffening of the orientation field is not necessary. Any twisting structure of the smectic layer as well as the director caused by interface effects rather degrades the practical performance of the V-shaped switching. Less
V型开关因材料的potractial AM-LCD而吸引经验极化的短轴(直觉上),平均苯环平面的方向比平行于底板的平行板垂直。铁电smc*,在聚酰亚胺膜上的双轴锚固起着重要的作用,SS状态;对齐languevin inderer driptors的角度旋转对于V形开关是必不可少的。形状开关

项目成果

期刊论文数量(22)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
M.Takeuchi 他5名: "V-shaped switching due to frustoelectricity in antiferroelectric liquid crystals"Ferroelectrics. 246. 1-20 (2000)
M.Takeuchi 等 5 人:“反铁电液晶中截电性引起的 V 形开关”Ferroelectrics 246. 1-20 (2000)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
M.Oshipov 他1名: "Molecular model for the anticlinic smectic-C_A phase"Phys.Rev.E. 62. 3724-3735 (2000)
M.Oshipov 等人:“反斜近晶 C_A 相的分子模型”Phys.Rev.E 62. 3724-3735 (2000)
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
P.V.Dolganov他2名: "Structural Transitions in Thin Free-Standing Films of an Antiferroelectric Liquid Crystal Exhibiting the SmC_α^* Phase in the Bulk Sample"Phys. Rev. E. (印刷中). (2002)
P.V.Dolganov 等人 2:“在散装样品中表现出 SmC_α^* 相的自立式反铁电薄膜的结构转变”Phys Rev. E.(出版中)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Fukuda,A., Hakoi,H., Okugawa,T., Ando,T., Matsumoto,T., Suzuki,Y., Johno,M., Hayashi,N., Kato,T., Kawada,S. and Kondoh,S.: "Understanding and Optimization of V-Shaped Switching Due to Frustration between Ferro- and Antiferro-Electricity in Smectic Liquid
福田,A.,箱井,H.,奥川,T.,安藤,T.,松本,T.,铃木,Y.,乔野,M.,林,N.,加藤,T.,川田,S。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Osipov,M.A. and Fukuda,A.: "Molecular Model for the Anticlinic Smectic-C_A Phase"Phys. Rev. E.. 62 [ 3 ]. 3724-3735 (2000)
奥西波夫,文学硕士
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

FUKUDA Atsuo其他文献

FUKUDA Atsuo的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('FUKUDA Atsuo', 18)}}的其他基金

Elucidation of physiological significance of newly discovered CRH release pathway and its relationship with known HPA axis
阐明新发现的CRH释放途径的生理意义及其与已知HPA轴的关系
  • 批准号:
    17H04025
  • 财政年份:
    2017
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Developmental disorder model based on fetal hypothalamic GABA-Cl system disturbances
基于胎儿下丘脑GABA-Cl系统紊乱的发育障碍模型
  • 批准号:
    17K19682
  • 财政年份:
    2017
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Grant-in-Aid for Challenging Research (Exploratory)
Taurine abnormality may underlie developmental disorders via perturbation of multimodal GABA actions
牛磺酸异常可能通过干扰多模式 GABA 作用而导致发育障碍
  • 批准号:
    24659508
  • 财政年份:
    2012
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Perturbation of developmental Cl^-homeodynamics may underlie fetal and neonatal brain disorders
发育性 Cl^-顺势动力学的扰动可能是胎儿和新生儿脑部疾病的基础
  • 批准号:
    23659535
  • 财政年份:
    2011
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Developmentaldisorder of fetal GABA system by maternal stress
母亲应激导致胎儿 GABA 系统发育障碍
  • 批准号:
    22390041
  • 财政年份:
    2010
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Cl-homeodynamics and resulting GABA_A-receptor-mediated functional changes underlying the cortical developmental disorder induced by stress
Cl-顺势动力学和由此产生的 GABA_A-受体介导的功能变化是应激引起的皮质发育障碍的基础
  • 批准号:
    19390058
  • 财政年份:
    2007
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Environmental influences on cortical development and plasticity via Cl^-homeostasis modulation
环境通过 Cl^-稳态调节对皮质发育和可塑性的影响
  • 批准号:
    16390058
  • 财政年份:
    2004
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
An approach for anti-sense therapy based on the establishment of an animal model for the epileptogenic cortical malformations
基于致痫性皮质畸形动物模型的反义治疗方法
  • 批准号:
    12557077
  • 财政年份:
    2000
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Neuron-Glia Interaction and Neural Network Function Involved in Ischemic Brain Damage.
神经元-胶质细胞相互作用和神经网络功能参与缺血性脑损伤。
  • 批准号:
    09680817
  • 财政年份:
    1997
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Membrane Properties, Sunaptic Currents, and Intracellular Ca Transients in Transplanted Neurons in the Model Rats of Diseases of the Central Nervous System
中枢神经系统疾病模型大鼠移植神经元的膜特性、突触电流和细胞内 Ca 瞬变
  • 批准号:
    07680897
  • 财政年份:
    1995
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

相似国自然基金

铅基反铁电陶瓷B位中/高熵设计及电卡效应研究
  • 批准号:
    52302134
  • 批准年份:
    2023
  • 资助金额:
    30 万元
  • 项目类别:
    青年科学基金项目
反铁电PbZrO3外延薄膜的性能调控及其在热开关领域的应用研究
  • 批准号:
    52372105
  • 批准年份:
    2023
  • 资助金额:
    50 万元
  • 项目类别:
    面上项目
反铁电超晶格薄膜极化增强与储能特性研究
  • 批准号:
    52302133
  • 批准年份:
    2023
  • 资助金额:
    30 万元
  • 项目类别:
    青年科学基金项目
铌酸钠基反铁电陶瓷P-Q相转换机理研究及储能机制分析
  • 批准号:
    52302277
  • 批准年份:
    2023
  • 资助金额:
    30 万元
  • 项目类别:
    青年科学基金项目
PbZrO3基反铁电陶瓷相变机制的原位多场耦合研究
  • 批准号:
    52302136
  • 批准年份:
    2023
  • 资助金额:
    30 万元
  • 项目类别:
    青年科学基金项目

相似海外基金

Collaborative Research: U.S.-Ireland R&D Partnership Antiferroelectricity, Ferrielectricity and Ferroelectricity in the Archetypal Antiferroelectric PbZrO3 at Small Scale
合作研究:美国-爱尔兰 R
  • 批准号:
    2219476
  • 财政年份:
    2022
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Continuing Grant
Collaborative Research: U.S.-Ireland R&D Partnership Antiferroelectricity, Ferrielectricity and Ferroelectricity in the Archetypal Antiferroelectric PbZrO3 at Small Scale
合作研究:美国-爱尔兰 R
  • 批准号:
    2219477
  • 财政年份:
    2022
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Continuing Grant
Antiferroelectricity and Intermolecular Interactions in Chiral Smectic Liquid Crystals
手性近晶液晶中的反铁电性和分子间相互作用
  • 批准号:
    06102005
  • 财政年份:
    1994
  • 资助金额:
    $ 2.11万
  • 项目类别:
    Grant-in-Aid for Specially Promoted Research
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了