Study of enhancing carrier mobility using tensilely strained Si films

利用拉伸应变硅薄膜增强载流子迁移率的研究

• 批准号: 11650010
• 负责人: YAMADA Akira
• 金额: $ 1.98万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650010/
• 关键词: Group IV semiconductor; Low temperature Epitaxy; Strained; Hot Wire Cell method; Mobility; Plasma-CVD; Photo-CVD; Si; ホットワイヤーセル; 歪み

Hot Wire (HW) Cell method was applied to grow epitaxial Si and strained Si_<1-y>C_y films at very low substrate temperature. In this method, the reactant gas was decomposed efficiently by HW and large amount of atomic hydrogen could be supplied to improve the crystallinity of Si films. The epitaxial Si films were grown on Si (100) at the substrate temperature (T_<sub>) of 150-250℃ and the pressure of 0.015-0.03Torr by using only SiH_4. The crystallinity of the films became amorphous or polycrystalline either at T_<sub> of over 300℃ or the pressure of over 0.06Torr. Carbon was introduced to the films by using C_2H_2 gas and the epitaxial growth at low T_<sub> was also possible by using hydrogen dilution. The hydrogen incorporation was observed in the epitaxial films at such low T_<sub>. The thermal annealing caused to desorb the hydrogen. Local vibration mode of C in Si network (607cm^<-1>) was detected in the annealed films by IR absorption and Raman scattering spectroscopy. The concentration of substitutional C was 0.9% when the ratio C_2H_2/SiH_4 was 0.01. Furthermore, X-ray reciprocal lattice mapping indicated the pseudomorphic growth of Si_<1-y>C_y alloy.Plasma-CVD was also applied to grow strained Si_<1-y>C_y films. The highest substitutional C content of 3.5% was obtained in the films with SiH_2 (CH_3)_2 addition. In-situ phosphorus doping was carried out by using PH_3. The Si films, with and without C addition, were grown at the same PH_3/SiH_4 ratio of 0.03%. The electron concentration of Si_<1-y>C_y film was lower than that of Si film. However, the value was increased up to the same level of the Si film after annealing at 700℃, which was 5x10^<18>cm^<-3>. It means that the dopant neutralization occurred in the as-grown Si_<1-y>C_y films.

采用热线(HW)电池方法在极低的衬底温度下生长外延Si和应变Si_1-y>C_y薄膜，该方法通过HW有效分解反应气体并提供大量的原子氢。为了提高Si薄膜的结晶度，在150-250℃的衬底温度（T_<sub>）和150℃的压力下，在Si（100）上生长了外延Si薄膜。仅使用SiH_4时薄膜的结晶度为0.015-0.03Torr，在T_<sub>超过300℃或使用C_2H_2气体和外延生长的压力超过0.06Torr时，薄膜的结晶度变为非晶或多晶。通过使用氢稀释也可以在低T_<sub>下在外延膜中观察到氢的掺入。通过红外吸收和拉曼散射光谱检测退火膜中C的热解吸(607cm^-1>)。当C_2H_2/SiH_4比率为0.01时，X射线倒易晶格映射显示了0.9%。 Si_1-yC_y合金。还采用等离子体CVD法生长了应变Si_1-yC_y薄膜，添加SiH_2(CH_3)_2的薄膜中C含量最高为3.5%。采用PH_3进行原位磷掺杂，在添加和不添加C的情况下，以相同的PH_3/SiH_4比例生长Si薄膜。 Si_<1-y>C_y薄膜的电子浓度低于Si薄膜，但经过700℃退火后，电子浓度增加到与Si薄膜相同的水平，为5x10^<18。 >cm^<-3>意味着在生长的Si_<1-y>C_y薄膜中发生了掺杂剂中和。

项目成果

S.Yagi: "Epitaxial Growth of Si_<1-y>C_y Films by Low Temperature Chemical Vapor Deposition"Jpn.J.Appl.Phys. 39・11A. L1078-L1080 (2000)

S.Yagi：“通过低温化学气相沉积进行 Si_<1-y>C_y 薄膜的外延生长”Jpn.J.Appl.Phys 39・11A (2000)。

S.Yagi: "Epitaxial Growth of Si_<1-y>C_y Films by Low Temperature Chemical Vapor Deposition"Jpn.J.Appl.Phys.. 3911A. L1078-L1080

S.Yagi：“通过低温化学气相沉积进行Si_<1-y>C_y薄膜的外延生长”Jpn.J.Appl.Phys.. 3911A。

T.Watahiki: "New Approach to Low Temperature Si Epitaxy by Using How Wire Cell Method"J. Cryst.Growth. 209. 335-338 (2000)

T.Watahiki：“使用 How Wire Cell 方法进行低温硅外延的新方法”J。

T.Watahiki: "New Approach to Low Temperature Si Epitaxy by Using Hot Wire Cell Method"J.Cryst.Growth. 209. 335-338 (2000)

T.Watahiki：“使用热线电池方法进行低温硅外延的新方法”J.Cryst.Growth。

T.Watahiki: "Low Temperature Epitaxial Growth of Si and Si_<1-y>C_y Films by Hot Wire Cell Method"Thin Solid Films. (2001)

T.Watahiki：“通过热线电池方法低温外延生长Si和Si_1-y>C_y薄膜”固体薄膜。