Study of enhancing carrier mobility using tensilely strained Si films

利用拉伸应变硅薄膜增强载流子迁移率的研究

• 批准号: 11650010
• 负责人: YAMADA Akira
• 金额: $ 1.98万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650010/
• 关键词: Group IV semiconductor; Low temperature Epitaxy; Strained; Hot Wire Cell method; Mobility; Plasma-CVD; Photo-CVD; Si; ホットワイヤーセル; 歪み

Hot Wire (HW) Cell method was applied to grow epitaxial Si and strained Si_<1-y>C_y films at very low substrate temperature. In this method, the reactant gas was decomposed efficiently by HW and large amount of atomic hydrogen could be supplied to improve the crystallinity of Si films. The epitaxial Si films were grown on Si (100) at the substrate temperature (T_<sub>) of 150-250℃ and the pressure of 0.015-0.03Torr by using only SiH_4. The crystallinity of the films became amorphous or polycrystalline either at T_<sub> of over 300℃ or the pressure of over 0.06Torr. Carbon was introduced to the films by using C_2H_2 gas and the epitaxial growth at low T_<sub> was also possible by using hydrogen dilution. The hydrogen incorporation was observed in the epitaxial films at such low T_<sub>. The thermal annealing caused to desorb the hydrogen. Local vibration mode of C in Si network (607cm^<-1>) was detected in the annealed films by IR absorption and Raman scattering spectroscopy. The concentration of substitutional C was 0.9% when the ratio C_2H_2/SiH_4 was 0.01. Furthermore, X-ray reciprocal lattice mapping indicated the pseudomorphic growth of Si_<1-y>C_y alloy.Plasma-CVD was also applied to grow strained Si_<1-y>C_y films. The highest substitutional C content of 3.5% was obtained in the films with SiH_2 (CH_3)_2 addition. In-situ phosphorus doping was carried out by using PH_3. The Si films, with and without C addition, were grown at the same PH_3/SiH_4 ratio of 0.03%. The electron concentration of Si_<1-y>C_y film was lower than that of Si film. However, the value was increased up to the same level of the Si film after annealing at 700℃, which was 5x10^<18>cm^<-3>. It means that the dopant neutralization occurred in the as-grown Si_<1-y>C_y films.

将热线（HW）细胞方法应用于在非常低的底物温度下生长外延SI并张紧Si_ <1-Y> c_y膜。在这种方法中，反应剂气体通过HW有效地分解，可以提供大量原子氢以改善Si膜的结晶度。外延SI膜在150-250℃的底物温度（T_ <ub>）下在Si（100）上生长，仅使用SIH_4的压力为0.015-0.03torr。薄膜的结晶度在T_ <ub>的300次以上或超过0.06torr的压力时变成无定形或多晶。通过使用C_2H_2气体将碳引入薄膜，并且在低T_ <sub>下的外延生长也可以通过使用氢稀释。在如此低的T_ <sub>的外延膜中观察到了氢化的氢。热退火导致解吸氢。通过IR抽象和拉曼散射光谱检测到在退火膜中检测到SI网络中C的局部振动模式。当比率C_2H_2/SIH_4为0.01时，取代C的浓度为0.9％。此外，X射线相互的晶格映射表明Si_ <1-Y> C_Y合金的伪形生长也被应用用于生长紧张的Si_ <1-Y> Y> C_Y膜。在SIH_2（CH_3）_2添加的膜中获得了最高的替代C含量为3.5％。使用PH_3进行原位磷掺杂。 Si膜以相同的ph_3/siH_4比率为0.03％。 Si_ <1-Y> C_Y膜的电子浓度低于Si膜的电子浓度。但是，该值在700℃退火后增加到同一水平的Si膜，即5x10^<18> cm^<-3>。这意味着掺杂剂中和发生在生长的si_ <1-y> c_y膜中。

项目成果

S.Yagi: "Epitaxial Growth of Si_<1-y>C_y Films by Low Temperature Chemical Vapor Deposition"Jpn.J.Appl.Phys. 39・11A. L1078-L1080 (2000)

S.Yagi：“通过低温化学气相沉积进行 Si_<1-y>C_y 薄膜的外延生长”Jpn.J.Appl.Phys 39・11A (2000)。

S.Yagi: "Epitaxial Growth of Si_<1-y>C_y Films by Low Temperature Chemical Vapor Deposition"Jpn.J.Appl.Phys.. 3911A. L1078-L1080

S.Yagi：“通过低温化学气相沉积进行Si_<1-y>C_y薄膜的外延生长”Jpn.J.Appl.Phys.. 3911A。

T.Watahiki: "New Approach to Low Temperature Si Epitaxy by Using How Wire Cell Method"J. Cryst.Growth. 209. 335-338 (2000)

T.Watahiki：“使用 How Wire Cell 方法进行低温硅外延的新方法”J。

T.Watahiki: "New Approach to Low Temperature Si Epitaxy by Using Hot Wire Cell Method"J.Cryst.Growth. 209. 335-338 (2000)

T.Watahiki：“使用热线电池方法进行低温硅外延的新方法”J.Cryst.Growth。

T.Watahiki: "Low Temperature Epitaxial Growth of Si and Si_<1-y>C_y Films by Hot Wire Cell Method"Thin Solid Films. (2001)

T.Watahiki：“通过热线电池方法低温外延生长Si和Si_1-y>C_y薄膜”固体薄膜。