Coherent control of one-photon forbidden transitions in semiconductors

半导体中单光子禁戒跃迁的相干控制

• 批准号: 10440088
• 负责人: MINAMI Fujio
• 金额: $ 8.45万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10440088/
• 关键词: coherent control; femtosecond optical pulse; 2p exciton; quantum beat; phase relaxation; ZnSe thin film; resonant hyper; Rayleigh scattering; フェムト秒光パルス; 2光子散乱現象; 位相間和

The coherent control technique, where a relative phase of two femtosecond optical pulses is controlled precisely, gives us a new method controlling freely optical transitions in the semiconductors. Combining this coherent control technique with the resonant hyper-Rayleigh scattering, we developed a new spectroscopic method to manipulate the wavefunctions of one-photon forbidden states in semiconductors. This method was applied to the coherent control of one-photon forbidden 2p exciton states in ZnSe thin film on GaAs substrate. As a result, it was found that the 2p excitonic polarization can be manipulated freely by controlling the relative phase between incidence two pulses, and that the phase relaxation time of the 2p exciton state is -2ps. In addition, the quantum beat signal was superimposed to the obtained signal. This means that the 2p exciton state is split to a heavy hole and light hole states due to the strain caused by the lattice mismatch between ZnSe and GaAs. It is found from the period of the quantum beat that the energy separation between the heavy hole and light hole 2p extions is about 2meV.Next, we investigated the symmetry of the 2p exciton state in ZnSe by changing the relative direction of the polarizations of two pulses. It is found that the heavy hole and light hole 2p excitons belong to different symmetry. The spectrum information shows that the wavefunction of the heavy hole 2p exciton is s-like. Whereas, as for the light hole 2p exciton, the wavefunction has d-like symmetry. Moreover, the selection rule of resonant hyper-Rayleigh scattering process involving the 2p exciton states is found to be different from that of the SHG process.

相干控制技术，其中两个飞秒光学脉冲的相对相可以精确地控制，从而为我们提供了一种新的方法，可以控制半导体中自由光学转变。将这种连贯的控制技术与谐振高射线散射相结合，我们开发了一种新的光谱法，以操纵半导体中的单光子禁止状态的波形。该方法应用于GAAS基板上ZnSE薄膜中的单光子禁止2P激子状态的相干控制。结果，发现可以通过控制两种脉冲之间的相对相，而2p激发态的相位松弛时间为-2PS，可以自由地操纵2P激子极化。另外，将量子拍打信号叠加到获得的信号。这意味着，由于Znse和GAAS之间的格子不匹配引起的应变，2P激子状态被分为一个重孔和轻孔状态。从量子搏动的周期中可以发现，重孔和轻孔2p延伸之间的能量分离约为2mev。下一个，我们研究了ZnSe中2p激子状态的对称性，通过改变两个的相对方向的相对方向脉冲。发现重孔和轻孔2p激子属于不同的对称性。频谱信息表明，重孔2p激子的波函数类似于S样。而对于轻孔2p激子，波函数具有d样对称性。此外，发现涉及2p激子状态的共振超射线散射过程的选择规则与SHG过程不同。

项目成果

Y.Mitsumori,T.Kuroda,F.Minami: "Manupulation of 2P excitonic wave function in ZnSe"J. Lumin. (in press).

Y.Mitsumori，T.Kuroda，F.Minami：“ZnSe 中 2P 激子波函数的操纵”J。

H.Ito,T.Takano,F.Minami,S.Nagao,H.Gotoh: "Type-II photoluminescence from GaP/A1P/GaP quantum wells undr hydrostatic pressure"Phys. Stat. Solidi (b). 211. 63-67 (1999)

H.Ito、T.Takano、F.Minami、S.Nagao、H.Gotoh：“静水压力下 GaP/A1P/GaP 量子阱的 II 型光致发光”Phys。

T.Kuroda,N.Hasegawa,F.Minami,Y.Terai,S.Kuroda,K.Takita: "Microphotoluminescence spectra of CdTe and CdMnTe self-organized quantum dots"J. Lumin.. 83-84. 321-324 (1999)

T.Kuroda，N.Hasekawa，F.Minami，Y.Terai，S.Kuroda，K.Takita：“CdTe和CdMnTe自组织量子点的显微光致发光光谱”J。

H. Itoh, T. Takano, F. Minami, S. Nagao, H. Goto: "Type-II photoluminescence from GaP/AIP/GaP quantum wells under hydrostatic pressure"phys. stat. sol.(b). 211. 63 (1999)

H. Itoh、T. Takano、F. Minami、S. Nagao、H. Goto：“静水压力下 GaP/AIP/GaP 量子阱的 II 型光致发光”phys。

T. Kuroda, F. Minami, K. Inoue, A. V. Baranov: "Resonant Iuminescene in semiconductor quantum dots under two-photon excitation"Phys. Stat. Solidi(b). 206. 463 (1998)

T. Kuroda、F. Minami、K. Inoue、A. V. Baranov：“双光子激发下半导体量子点中的共振发光”Phys。