Study on GaN and Pelated Compound Crystal Growth By ECR-MBE for Blue Lase

蓝色激光ECR-MBE生长GaN和板状化合物晶体的研究

基本信息

批准号：
07650385
负责人：
NANISHI Yasushi
金额：
$ 1.47万
依托单位：
Ritsumeikan University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650385/
关键词：
Blue Laser ECR-MBE Optical emission spectroscopy Low temperature Growth lon Radical GaN cubic GaN 原子レベル制御

项目摘要

Fundamental studies on GaN and related compound crystal growth were carried out by using electron-cyclotron-resonance molecular-beam-epitaxy (ECR-MBE) for semiconductor laser diode emitting in blue to ultra-violet light. ECR-MBE,which can effectively utilize excited species including atomic and molecular radicals and ions even in ultra high vacuum atmosphere, has several advantages over conventional epitaxial growth methods, which include 1)low temperature growth 2)on need for hydrogen gas 3)capability forin-situ observation by optical emission spectroscopy and 4)precise thickness control in atomic scale.Several useful experimental results are obtained from these studies. These include1)From optical emission spectroscopy, dominant excited species for GaN MBE growht were found to be atomic nitrogen. It was further found that hydrogen and helium gas addition to nitrogen gas is effective in obtaining excited species and as aresults in increasing growth rate. 2)Cubic and hexagonal crystal structure control was successfully realized by both III to V ratio and electric bias voltage. Both mechanism can be equally explained by effective III to V ratio control on the growing surface during growth. 3)LigaO_2 was found to be a suitable substrate for GaN MBE growth with is small lattice mismatch of around 1% to GaN.4)Growth mechanism explaining ECR-MBE growth should include desorption process induced by impinging ionic species.

利用电子回旋共振分子束外延（ECR-MBE）技术对发射蓝光至紫外光的半导体激光二极管进行了GaN及相关化合物晶体生长的基础研究。 ECR-MBE即使在超高真空气氛下也能有效利用包括原子和分子自由基和离子在内的激发物种，与传统外延生长方法相比具有多种优势，包括1）低温生长2）不需要氢气3）能力用于光学发射光谱的原位观察和4）原子尺度的精确厚度控制。从这些研究中获得了一些有用的实验结果。其中包括1)从光学发射光谱来看，发现 GaN MBE 生长的主要激发物种是原子氮。进一步发现，将氢气和氦气添加到氮气中对于获得激发态物种是有效的，并且结果是增加生长速率。 2)通过III/V比和电偏压成功实现了立方和六方晶体结构的控制。这两种机制都可以通过生长过程中生长表面上有效的 III 族与 V 族的比例控制来同等地解释。 3)LigaO_2被发现是适合GaN MBE生长的衬底，与GaN的晶格失配很小，约为1%。4)解释ECR-MBE生长的生长机制应包括由撞击离子物质引起的解吸过程。