Study on fabrication of heterostructures based on InN, GaN and alloys and applications for HFET
InN、GaN及合金异质结构制备及HFET应用研究
基本信息
- 批准号:13450131
- 负责人:
- 金额:$ 8.19万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2001
- 资助国家:日本
- 起止时间:2001 至 2004
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In this research project, our aim is to develop fundamental technologies for fabrication of HFET based on InN, GaN and their alloys. We have studied the crystal growth of high quality InN and InGaN using plasma-excited molecular beam epitaxy and the fabrication of heterostructure based on these materials. Principal results obtained in this project are summarized as follows ;1. For the InN growth on sapphire by RF-MBE, single crystalline InN with high quality crystalliniy and excellent electrical properties were successfully grown by optimizing growth condition such as nitridation, low-temperature grown buffer layer, growth temperature etc.2. Based on systematic studies on structural and optical characterizations using TEM, XRD, Raman scattering, EXAFS, PL and optical absorption, true bandgap energy of InN with ideal wurtzite structure is found to be approximately 0.65 eV.3. Single-crystalline InN was successfully grown on Si by introducing brief nitridation and AIN buffer.4. High quality In-rich InGaN without phase separation was obtained by using low-temperature grown InN buffer. It was also found that insertion of the InN template was very effective in improving the crystalline quality and surface morphology of In-rich InGaN.5. InN/InGaN quantum well structures were successfully fabricated on the InN template grown on sapphire, and PL emissions from the InN well layers were observed for the first time.6. Influences of thermal oxidation of InN on the chemical properties of InN surface and structural and optical properties were studied. The oxidation of InN was confirmed to promote the formation of In_2O_3, which had a remarkable influence on optical properties of the InN.7. Monte Carlo simulation of electrical properties of InN with narrow bandgap showed that InN has higher mobility and saturation velocity than GaN, indication excellent potential for HFET application.
在这个研究项目中,我们的目标是开发基于 InN、GaN 及其合金的 HFET 制造的基础技术。我们研究了使用等离子体激发分子束外延的高质量 InN 和 InGaN 晶体生长以及基于这些材料的异质结构的制造。本项目取得的主要成果概括如下: 1.采用RF-MBE在蓝宝石上生长InN,通过优化氮化、低温生长缓冲层、生长温度等生长条件,成功生长出具有高质量结晶和优异电学性能的单晶InN。2。基于使用TEM、XRD、拉曼散射、EXAFS、PL和光学吸收对结构和光学表征的系统研究,发现具有理想纤锌矿结构的InN的真实带隙能量约为0.65 eV。3。通过引入短暂氮化和AlN缓冲剂,在Si上成功生长了单晶InN。 4.通过使用低温生长的InN缓冲剂获得了无相分离的高质量富InGaN。研究还发现,InN模板的插入对于改善富InInGaN的晶体质量和表面形貌非常有效。5。在蓝宝石生长的InN模板上成功制备了InN/InGaN量子阱结构,并首次观测到InN阱层的PL发射。6.研究了InN热氧化对InN表面化学性质以及结构和光学性质的影响。 InN的氧化被证实促进了In_2O_3的形成,这对InN.7的光学性能有显着影响。窄带隙InN电学性能的蒙特卡罗模拟表明,InN比GaN具有更高的迁移率和饱和速度,显示出HFET应用的巨大潜力。
项目成果
期刊论文数量(72)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
The effect of substrate polarity on the growth of InN by RF-MBE
- DOI:10.1016/j.jcrysgro.2004.05.044
- 发表时间:2004-08-15
- 期刊:
- 影响因子:1.8
- 作者:Naoi, H;Matsuda, F;Nanishi, Y
- 通讯作者:Nanishi, Y
齋藤義樹, 堀正輝, 山口智広, 寺口信明, 鈴木彰, 荒木努, 名西やす之: "RF-MBE成長単結晶InN膜の光学特性"信学技報. 102. 89-92 (2002)
Yoshiki Saito、Masaki Hori、Tomohiro Yamaguchi、Nobuaki Teraguchi、Akira Suzuki、Tsutomu Araki、Yasuyuki Nanishi:“RF-MBE 生长的单晶 InN 薄膜的光学特性”IEICE 技术报告 102. 89-92 (2002)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
Y.Saito, T.Yamaguchi, H.Kanazawa, K.Kano, T.Araki, Y.Nanishi 他: "Growth of high-quality InN using low-temperature intermediate layers by RF-MBE"J.Cryst.Growth. 237-239. 1017-1021 (2002)
Y.Saito、T.Yamaguchi、H.Kanazawa、K.Kano、T.Araki、Y.Nanishi 等人:“通过 RF-MBE 使用低温中间层生长高质量 InN”J.Cryst.Growth 237-239。1017-1021(2002)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Y.Saito, Y.Tanabe, T.Yamaguchi, T.Araki, Y.Nanishi, N.Teraguchi, A.Suzuki: "Polarity of High-quality Indium Nitride grown by RF Molecular Beam Epitaxy"phy. stat. sol. (b). 228. 13-16 (2001)
Y.Saito、Y.Tanabe、T.Yamaguchi、T.Araki、Y.Nanishi、N.Teraguchi、A.Suzuki:“通过射频分子束外延生长的高质量氮化铟的极性”phy。
- DOI:
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- 影响因子:0
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Optical properties of InxGa1-xN with entire alloy composition on InN buffer layer grown by RF-MBE
RF-MBE 生长的 InN 缓冲层上具有完整合金成分的 InxGa1-xN 的光学特性
- DOI:
- 发表时间:2002
- 期刊:
- 影响因子:0
- 作者:M.Hori;K.Kano;T.Yamaguchi;Y.Saito;T.Araki;Y.Nanishi;N.Teraguchi;A.Suzuki
- 通讯作者:A.Suzuki
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NANISHI Yasushi其他文献
NANISHI Yasushi的其他文献
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{{ truncateString('NANISHI Yasushi', 18)}}的其他基金
Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys
使用 InN 和相关合金控制异质、纳米结构及其性能和能带工程
- 批准号:
21246004 - 财政年份:2009
- 资助金额:
$ 8.19万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties
开发先进的 RF-MBE 生长 InN 及相关合金并控制其光电性能
- 批准号:
18206003 - 财政年份:2006
- 资助金额:
$ 8.19万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Study on GaN and Pelated Compound Crystal Growth By ECR-MBE for Blue Lase
蓝色激光ECR-MBE生长GaN和板状化合物晶体的研究
- 批准号:
07650385 - 财政年份:1995
- 资助金额:
$ 8.19万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
相似海外基金
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通过不混溶性质控制 InN 和 InGaN 的原子尺度结构,为器件应用奠定基础
- 批准号:
15H03559 - 财政年份:2015
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MBE生长氮化铟及相关混晶的结构和光学性能评价研究
- 批准号:
09F09272 - 财政年份:2009
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Grant-in-Aid for JSPS Fellows
Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys
使用 InN 和相关合金控制异质、纳米结构及其性能和能带工程
- 批准号:
21246004 - 财政年份:2009
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$ 8.19万 - 项目类别:
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窒化インジウムの貫通転位低減化に関する研究
减少氮化铟中穿透位错的研究
- 批准号:
06J03675 - 财政年份:2006
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$ 8.19万 - 项目类别:
Grant-in-Aid for JSPS Fellows
Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties
开发先进的 RF-MBE 生长 InN 及相关合金并控制其光电性能
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18206003 - 财政年份:2006
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