Study on fabrication of heterostructures based on InN, GaN and alloys and applications for HFET

InN、GaN及合金异质结构制备及HFET应用研究

• 批准号: 13450131
• 负责人: NANISHI Yasushi
• 金额: $ 8.19万
• 依托单位: Ritsumeikan University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450131/
• 关键词: InN; RF-MBE; InGaN; HFET; bandqap; heterostructure; quantum well; crystal growth; InN; InGaN; 臨界膜厚; InAlN; 量子井戸構造; 貫通転位; バンドギャツプ; 極性; Si基板; AlNバッファ; ヘテロ接合; モンテカルロシミュレーション; 最大ドリフト速度; 窒化; 低温中間層; AlGaN; GaN; 二次元電子ガス; Full Band Monte

In this research project, our aim is to develop fundamental technologies for fabrication of HFET based on InN, GaN and their alloys. We have studied the crystal growth of high quality InN and InGaN using plasma-excited molecular beam epitaxy and the fabrication of heterostructure based on these materials. Principal results obtained in this project are summarized as follows ;1. For the InN growth on sapphire by RF-MBE, single crystalline InN with high quality crystalliniy and excellent electrical properties were successfully grown by optimizing growth condition such as nitridation, low-temperature grown buffer layer, growth temperature etc.2. Based on systematic studies on structural and optical characterizations using TEM, XRD, Raman scattering, EXAFS, PL and optical absorption, true bandgap energy of InN with ideal wurtzite structure is found to be approximately 0.65 eV.3. Single-crystalline InN was successfully grown on Si by introducing brief nitridation and AIN buffer.4. High quality In-rich InGaN without phase separation was obtained by using low-temperature grown InN buffer. It was also found that insertion of the InN template was very effective in improving the crystalline quality and surface morphology of In-rich InGaN.5. InN/InGaN quantum well structures were successfully fabricated on the InN template grown on sapphire, and PL emissions from the InN well layers were observed for the first time.6. Influences of thermal oxidation of InN on the chemical properties of InN surface and structural and optical properties were studied. The oxidation of InN was confirmed to promote the formation of In_2O_3, which had a remarkable influence on optical properties of the InN.7. Monte Carlo simulation of electrical properties of InN with narrow bandgap showed that InN has higher mobility and saturation velocity than GaN, indication excellent potential for HFET application.

在该研究项目中，我们的目的是开发基于Inn，Gan及其合金制造HFET的基本技术。我们使用等离子体激发的分子束外延和基于这些材料的异质结构的制造研究了高质量旅馆和INGAN的晶体生长。该项目中获得的主要结果总结如下; 1。对于RF-MBE在Sapphire上的Inn增长中，通过优化诸如硝基化，低温种植的缓冲层，生长温度等的生长条件，成功地生长了具有高质量结晶和出色电特性的单晶inn。基于使用TEM，XRD，拉曼散射，EXAF，PL和光吸收的结构和光学表征的系统研究，发现具有理想Wurtzite结构的INN的真实带隙能量约为0.65 ev.3。通过引入简短的硝化和Ain Buffer。4。通过使用低温种植的Inn Buffer获得了高质量的内部INGAN，没有相分离。还发现，Inn模板的插入在改善富含Ingan的晶体质量和表面形态方面非常有效。5。 Inn/Ingan量子井结构在蓝宝石上种植的Inn模板上成功制造，并首次观察到Inn Well层的PL排放。6。研究了INN热氧化对INN表面的化学性质以及结构和光学特性的影响。确认INN的氧化以促进IN_2O_3的形成，这对Inn.7的光学特性产生了显着影响。蒙特卡洛对具有狭窄带隙的INN的电气性能的蒙特卡洛模拟表明，INN的迁移率和饱和速度高于GAN，这表明HFET应用的巨大潜力。

项目成果

Single crystalline InN films grown on Si substrates by using a brief substrate nitridation process

使用简单的衬底氮化工艺在 Si 衬底上生长单晶 InN 薄膜

• 发表时间: 2003
• 期刊: Mat.Res.Soc.Symp.Proc. 743
• 作者: T.Yamaguchi;K.Mizuo;Y.Saito;T.Noguchi;T.Araki;Y.Nanishi
• 通讯作者: Y.Nanishi

RF-MBE Growth and Characterization of Indium Nitride on (0001) sapphire substrate

(0001) 蓝宝石衬底上氮化铟的 RF-MBE 生长和表征

• 发表时间: 2002
• 期刊: Vacuum Science and Technology ; Nitrides as seen by technology
• 作者: Y.Nanishi;Y.Saito;T.Yamaguchi
• 通讯作者: T.Yamaguchi

Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE

RF-MBE 生长的氮化铟晶体质量的生长温度依赖性

• 发表时间: 2002
• 期刊: phys.stat.sol.(b) 234
• 作者: Y.Saito;H.Harima;E.Kurimoto;T.Yamaguchi;N.Teraguchi;A.Suzuki;T.Araki;Y.Nanishi
• 通讯作者: Y.Nanishi

Y.Saito, T.Yamaguchi, H.Kanazawa, K.Kano, T.Araki, Y.Nanishi 他: "Growth of high-quality InN using low-temperature intermediate layers by RF-MBE"J.Cryst.Growth. 237-239. 1017-1021 (2002)

Y.Saito、T.Yamaguchi、H.Kanazawa、K.Kano、T.Araki、Y.Nanishi 等人：“通过 RF-MBE 使用低温中间层生长高质量 InN”J.Cryst.Growth 237-239。1017-1021（2002）

齋藤義樹, 堀正輝, 山口智広, 寺口信明, 鈴木彰, 荒木努, 名西やす之: "RF-MBE成長単結晶InN膜の光学特性"信学技報. 102. 89-92 (2002)

Yoshiki Saito、Masaki Hori、Tomohiro Yamaguchi、Nobuaki Teraguchi、Akira Suzuki、Tsutomu Araki、Yasuyuki Nanishi：“RF-MBE 生长的单晶 InN 薄膜的光学特性”IEICE 技术报告 102. 89-92 (2002)。