Development of generation method of microwave plasmas with an annular slot antenna for large diameter wafer etching

大直径晶圆刻蚀用环形缝隙天线微波等离子体产生方法的研制

• 批准号: 06558065
• 负责人: FUJITA Hiroharu
• 金额: $ 3.33万
• 依托单位: Saga University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06558065/
• 关键词: large diameter plasma; high density plasma; uniform plasma; ring-shaped permanent magnet; annular slot antenna; negative ion

A new generation method for a large diameter and uniform microwave plasma is proposed without magnetic coils. An annular slot antenna and two ring-shaped permanent magnets are used for the generation of high density plasma by electron cyclotron resonance in the circumference of a chamber with the plasma confinement and diffusing to the central region. We can summarize them as follows ;(1) A uniform microwave plasma of 30cm in diameter was success-fully produced in both Ar and SF_6 gases, and the electron density of about 3x10^<10>cm^<-3> was obtained. The uniformity of electron density within 5% over 30cm diameter was obtained, while that of etch rate within 2.5% was observed at the distance where electron density reach the best uniformity. It was found that this plasma source was successfully useful for a practical etching.(2) Results from etching profile of poly-Si pattern suggested that the etching was driven primarily by radicals.(3) As the bias voltage applied to the substrate shifted to the negative direction, the etching rates increased up to about 3 times with the keeping uniformity. The etching rates at a bias voltage of -150V arrived to about 400nm/min which seems to be available for a fabrication process of semiconductor devices.

提出了一种新一代直径和均匀微波等离子体的新一代方法，而没有磁管线圈。环形插槽天线和两个环形永久磁体用于通过电子旋转膜共振在具有等离子体限制的腔室中的电子环共振来产生高密度等离子体。我们可以按以下方式进行总结；（1）在AR和SF_6气体中成功产生了直径30厘米的均匀微波等离子体，并且获得了约3x10^<10> cm^<-3>的电子密度。在直径30厘米以内的5％以内的电子密度的均匀性得到了观察到2.5％以内的蚀刻速率在电子密度达到最佳均匀性的距离处。已经发现，该等离子体源成功地用于实用蚀刻。（2）poly-si模式的蚀刻曲线的结果表明，蚀刻主要是由自由基驱动的。（3）作为应用于底物的偏置电压转移到底物的驱动。负方向，蚀刻率随着保持均匀性的增加而增加了约3倍。 -150V的偏置电压的蚀刻速率到达约400nm/min，这似乎可以用于半导体设备的制造过程。

项目成果

T.Ikushima, Y.Okuno and H.Fujita: "Production of Large Diameter Microwave Plasma Using an Annular Slot Antenna" Appl.Phys.Lett.vol1.64. 25-27 (1994)

T.Ikushima、Y.Okuno 和 H.Fujita：“使用环形缝隙天线生产大直径微波等离子体”Appl.Phys.Lett.vol1.64。

亀川 宣広: "円環スロットアンテナを用いた大口径マイクロ波プラズマにおけるSiエッチングに及ぼすガス圧力の影響" プラズマ・核融合学会第12回年会 講演予稿集. 12. (1995)

Nobuhiro Kamekawa：“气体压力对使用圆形缝隙天线的大直径微波等离子体中硅蚀刻的影响”日本等离子体与聚变科学学会第12届年会记录12。（1995年）。

藤田寛治: "初心者のためのプロセスプラズマの基礎と応用" (社)プラズマ・核融合学会. 8. 17-33 (1995)

Hiroharu Fujita：“初学者处理等离子体的基础知识和应用”等离子体与融合科学协会。8. 17-33 (1995)

亀川宣宏: "大口径マイクロ波プラズマによるSiのエッチングにおけるバイアス効果" 電気関係学会九州支部連合大会 講演論文集. 48. 183- (1995)

Nobuhiro Kamekawa：“大孔径微波等离子体在硅蚀刻中的偏差效应”日本电气工程师九州分会会议记录 48. 183- (1995)。

亀川宣宏: "大口径マイクロ波プラズマによるSiのエッチングにおけるバイアス効果" 電気関係学会九州支部連合大会 講演論文集. 48. 183 (1995)

Nobuhiro Kamekawa：“大直径微波等离子体在硅蚀刻中的偏置效应”日本电气工程师九州分会联合会会议记录，48. 183 (1995)