Spinodal Decomposition of Alloy Semiconductors Studied by Physical Metallurgical Techniques

物理冶金技术研究合金半导体的旋节线分解

• 批准号: 01550508
• 负责人: TAKEDA Seiji
• 金额: $ 1.28万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550508/
• 关键词: Alloy Semiconductor; Ga-As-P compound; Transmission Electron Microscopy; Compositional Fluctuation; 濃度変動; 透温電子顕微鏡法; スピノ-ダル分解

Structural property of thin layers of alloy-semiconductors has been investigated by means of transmission electron microscopy. The specimens observed in the present study were Ga-As-P, Zn-Se-S, Ga-Al-As and Ga-In-Al-As. The results of observation are summarized as follows.1. One-dimensional compositional fluctuation in Ga-As-PThe material was grown by the VPE method on a GaP substrate. Fringe contrast was observed in dark field electron micrographs. This contrast results from the compositional fluctuation of As and P in a specimen. It was shown that the fluctuation was due to rotation of the substrate during crystal growth.We defined the chemical sensitivity of a dark field image, i. e. The compositional derivative of image intensity. Analysis of a image intensity based on the chemical sensitivity indicated that a 200-type reflection was useful in detecting the compositional fluctuation and that a image with another reflection like 220 also has high sensitivity in some restricted exper … More imental condition. This kind of analysis will be useful to detect compositional fluctuation caused by the spinodal decomposition in alloy semiconductors.2. Interface structure in a strained layer super-lattice Zn-Se-SThe material was fabricated by the MOCVD method. Thin layers of the two compounds ZnS and ZnSe were stacked alternately. Misfit of lattice parameters of the two compounds was considerably large and the very wavy interface was observed.3. Ga-As-Al alloys grown by the LPE methodThe constitutional elements, Ga and Al were well homogenized and no compositional fluctuation was detected.4. Ga-In-Al-As alloys grown by MBE methodIt is well known that the alloy system exhibited the spinodal decomposition. However, the compositional fluctuation was not observed so far in the present specimens. It may be suggested that the growth method or growth temperature is related to the compositional fluctuation.Heat treatment of thin foil specimens causes some evaporation of constitutional elements. In order to avoid this, we are planning to continue the Less

通过透射电子显微镜研究了合金半导体薄层的结构特性，本研究中观察到的样品为 Ga-As-P、Zn-Se-S、Ga-Al-As 和 Ga-In-Al。观察结果总结如下： 1．Ga-As-P中的一维成分波动通过VPE方法在GaP衬底上生长，在暗场电子显微照片中观察到条纹对比度。这种对比度是由样品中 As 和 P 的成分波动引起的。结果表明，这种波动是由于晶体生长过程中基底的旋转造成的。我们定义了暗场图像的化学灵敏度，即图像强度的成分导数。基于化学灵敏度的图像强度分析表明，200 型反射对于检测成分波动很有用，并且具有其他反射（如 220）的图像在某些有限的实验条件下也具有高灵敏度。将2．应变层超晶格Zn-Se-S界面结构采用MOCVD法制备了两种化合物ZnS和ZnSe的薄层交替堆叠。两种化合物的晶格参数失配相当大，并且观察到采用LPE法生长的Ga-As-Al合金的波状界面。 3．然而，MBE法生长的Ga-In-Al-As合金均质化良好，没有检测到成分波动。众所周知，该合金体系表现出旋节线分解，目前尚未观察到成分波动。这可能表明生长方法或生长温度与成分波动有关。薄箔样本的热处理会导致成分元素的一些蒸发，为了避免这种情况，我们计划继续减少。

项目成果

S.Takeda,M,Hirata,S.Muto G.C.Hua,K.Hiraga and M.Kiritani.: "HRTEM Obserration of ElectronーIrradiationーInduced Defects Penetratig through a Thil of Germoridm" Ultranicroscopy. (1991)

S. Takeda、M、Hirata、S. Muto G. C. Hua、K. Hiraga 和 M. Kiritani.：“电子辐射的 HRTEM 观察 - 穿过 Germoridm 的诱导缺陷”（1991 年）。

S.Takeda,M.Hirata,T.Sato,H.Fujita and K.Fujii ed.K.Sumino: "Detects and Microstructure in Vapor Phase Epitaxial Grown GaAsxP_<1ーx>1GaP" Detect Control in Semiconductors. 1111-1116 (1990)

S.Takeda、M.Hirata、T.Sato、H.Fujita 和 K.Fujii ed.K.Sumino：“气相外延生长 GaAsxP_<1-x>1GaP 中的检测和微观结构”半导体检测控制 1111-1116。 (1990)

竹田精治: "競合する相互作用と一次元長周期構造" 日本金属学会報. 28. 872-879 (1989)

Seiji Takeda：“竞争相互作用和一维长周期结构”日本金属研究所公报 28. 872-879 (1989)。

S. Takeda, M. Hirata, S. Muto, G. C. Hua, K. Hiraga and M. Kiritani: "HRTEM Observation of Electron-Irradiation-Induced Defects Penetrating through a Thin Foil of Germanium" Ultramicroscopy. (1991)

S. Takeda、M. Hirata、S. Muto、G. C. Hua、K. Hiraga 和 M. Kiritani：“穿透锗薄箔的电子辐照诱发缺陷的 HRTEM 观察”超显微术。

S.takeda,S.Muto and M.Hirata: "Transmission Electron Diffraction Patterns of ElectronーIrradiationーInduced{113}ーFaulted Loops in Si" Jpn.J.Appl.Phys.29. L1698-L1701 (1990)

S.takeda、S.Muto 和 M.Hirata：“电子的透射电子衍射图案－辐照－感应{113}－Si 中的故障环”Jpn.J.Appl.Phys.29 (1990)。