Structure Analysis of Point-Defect-Aggregates in Semiconductors by Means of Crystallographic Techniques

利用晶体学技术分析半导体中点缺陷聚集体的结构

• 批准号: 03680047
• 负责人: TAKEDA Seiji
• 金额: $ 0.96万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03680047/
• 关键词: semiconductors; point defect; interstitial atom; electron irradiation; ion implantation; electron diffraction; hydrogen; transmission electron microscopy; シリコン; 電子線電射; イオン電射; ロッドライクディフェクト; 電子顕微鏡

Point defects in a semiconducting material are introduced during crystal growth, heat treatment, electron irradiation and ion-implantation. It is well known that they gave a considerable chance to aggregate at elevated temperatures. Atomic structures of several aggregates have remained uncertain, and this fact has caused unnecessary confusion. In the present research, atomic structures of the aggregates have been analyzed by means of transmission electron diffraction and transmission electron microscopy. Since the atoms which constitute a covalent material have a strong tendency to form covalent bonds even in a defect region, it is expected that the atomic structure of aggregates has a kind of order. This is the reason of the advantage of transmission electron diffraction and electron microscopic techniques, which are very convenient means to analyze small particles of a periodic structure which are embedded in the matrix crystal. The results of our analysis are summarized as follows.1 … More . Defect on {113} in Si and GeA proposed atomic model shows that interstitial Si atoms aggregate on {113} and form a reconstructed structure in the interior of a Si crystal. The model is characterized by 5-6-7-and 8-membered atomic rings and has no dangling bond in the {110} projection. The 6-membered rings constitute tiny rods of the hexagonal structure, and the 8-membered rings are related to the {113} surface structure. It has been confirmed based on an energy calculation that the energy per self interstitial atom in the reconstructed structure is distinctively smaller than that estimated for an isolated interstitial atom.2. Planar defects in a Si-doped GaAs crystalSmall precipitates of triangular shape are observed in a Si-doped GaAs crystal. Transmission electron microscopic study has indicated that the two {111} crystallographic net planes of Si are inserted between the two existing {111} net planes in a GaAs crystal.Furthermore, we have proposed a new atomic model for a hydrogen-induced platelet in Si based on the precise analysis of high-resolution electron microscopic images.In conclusion, the crystallographic techniques such as electron diffraction and microscopy are very useful in analyzing atomic structures of point-defect-aggregates in semiconducting materials. Less

半导体材料中的点缺陷是在晶体生长、热处理、电子辐射和离子注入过程中引入的。众所周知，它们在高温下提供了相当大的机会聚集，但这一事实仍然不确定。在目前的研究中，聚集体的原子结构已经通过透射电子衍射和透射电子显微镜进行了分析，因为构成共价材料的原子即使在中也具有形成共价键的强烈倾向。缺陷区域，预计聚集体的原子结构具有某种有序性，这就是透射电子衍射和电子显微技术的优势的原因，它们是分析周期性结构的小颗粒的非常方便的手段。我们的分析结果总结如下。1 … 更多 Si 和 GeA 提出的原子模型中的 {113} 缺陷表明，间隙 Si 原子聚集在 {113} 上并在该模型的特征是 5-6-7 和 8 元原子环，并且在 {110} 投影中没有悬挂键。6 元环构成六方结构的微小棒。 8元环与{113}表面结构有关，根据能量计算证实，重建结构中每个自填隙原子的能量明显小于孤立的估计能量。 2. Si 掺杂 GaAs 晶体中的平面缺陷在 Si 掺杂 GaAs 晶体中观察到三角形的小析出物，表明 Si 的两个 {111} 晶体网平面插入到两者之间。 GaAs晶体中现有的{111}网平面。此外，我们基于对Si中氢诱导片晶的精确分析，提出了一种新的原子模型总之，电子衍射和显微镜等晶体学技术对于分析半导体材料中点缺陷聚集体的原子结构非常有用。

项目成果

S. Takeda: "Interior-Lattice-Reconstruction in a Si Crystal: Atomic Structure of the {113}Planar Defect in Si (in Japanese)" Bulletin of the Japanese Crystallographic Society. 33. 333-338 (1991)

S. Takeda：“Si 晶体中的内部晶格重建：Si 中 {113} 平面缺陷的原子结构（日语）”日本晶体学会通报。

S.TAKEDA,S.MUTO and M.HIRATA: "Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge" Materials Science Forum. 83-87. 309-314 (1992)

S.TAKEDA、S.MUTO 和 M.HIRATA：“电子辐照硅和锗中间隙缺陷的原子结构”材料科学论坛。

M. Koyama and S. Takeda: "Atomic structure and energy of the {113} planar interstitial defects in Si" Phys. Rev. B46. 12305-12315 (1992)

M. Koyama 和 S. Takeda：“Si 中 {113} 平面间隙缺陷的原子结构和能量”Phys。

M.Koyama and S.Takeda: "Atomic structure and energy of the{113}planar interstitial defects in Si" Phys.Rev.B46. 12305-12315 (1992)

M.Koyama 和 S.Takeda：“Si 中{113}平面间隙缺陷的原子结构和能量”Phys.Rev.B46。

S. Takeda, S. Muto and M. Hirata: "Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge" Materials Science Forum. 83-87. 309-314 (1992)

S. Takeda、S. Muto 和 M. Hirata：“电子辐照硅和锗中间隙缺陷的原子结构”材料科学论坛。