Structure Analysis of Point-Defect-Aggregates in Semiconductors by Means of Crystallographic Techniques

利用晶体学技术分析半导体中点缺陷聚集体的结构

• 批准号: 03680047
• 负责人: TAKEDA Seiji
• 金额: $ 0.96万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03680047/
• 关键词: semiconductors; point defect; interstitial atom; electron irradiation; ion implantation; electron diffraction; hydrogen; transmission electron microscopy; シリコン; 電子線電射; イオン電射; ロッドライクディフェクト; 電子顕微鏡

Point defects in a semiconducting material are introduced during crystal growth, heat treatment, electron irradiation and ion-implantation. It is well known that they gave a considerable chance to aggregate at elevated temperatures. Atomic structures of several aggregates have remained uncertain, and this fact has caused unnecessary confusion. In the present research, atomic structures of the aggregates have been analyzed by means of transmission electron diffraction and transmission electron microscopy. Since the atoms which constitute a covalent material have a strong tendency to form covalent bonds even in a defect region, it is expected that the atomic structure of aggregates has a kind of order. This is the reason of the advantage of transmission electron diffraction and electron microscopic techniques, which are very convenient means to analyze small particles of a periodic structure which are embedded in the matrix crystal. The results of our analysis are summarized as follows.1 … More . Defect on {113} in Si and GeA proposed atomic model shows that interstitial Si atoms aggregate on {113} and form a reconstructed structure in the interior of a Si crystal. The model is characterized by 5-6-7-and 8-membered atomic rings and has no dangling bond in the {110} projection. The 6-membered rings constitute tiny rods of the hexagonal structure, and the 8-membered rings are related to the {113} surface structure. It has been confirmed based on an energy calculation that the energy per self interstitial atom in the reconstructed structure is distinctively smaller than that estimated for an isolated interstitial atom.2. Planar defects in a Si-doped GaAs crystalSmall precipitates of triangular shape are observed in a Si-doped GaAs crystal. Transmission electron microscopic study has indicated that the two {111} crystallographic net planes of Si are inserted between the two existing {111} net planes in a GaAs crystal.Furthermore, we have proposed a new atomic model for a hydrogen-induced platelet in Si based on the precise analysis of high-resolution electron microscopic images.In conclusion, the crystallographic techniques such as electron diffraction and microscopy are very useful in analyzing atomic structures of point-defect-aggregates in semiconducting materials. Less

在晶体生长，热处理，电子辐射和离子植入期间，引入了半导体材料中的点缺陷。众所周知，他们考虑了在升高温度下聚集的机会。几个聚集体的原子结构仍然不确定，这一事实引起了不必要的混乱。在本研究中，已经通过透射电子衍射和透射电子显微镜对聚集体的原子结构进行了分析。由于构成共价材料的原子即使在缺陷区域也具有强烈的形成共价键的趋势，因此预计聚集体的原子结构具有一种顺序。这是传播电子衍射和电子显微镜技术优势的原因，这是分析嵌入基质晶体中的周期性结构的小颗粒的非常方便的手段。我们的分析结果总结如下。1…更多。 Si和Gea提出的原子模型的{113}上的缺陷表明{113}上的间隙Si原子聚集在{113}上，并在Si晶体的内部形成重建结构。该模型的特征是5-6-7和8元的原子环，并且在{110}投影中没有悬空的键。 6元的环构造了六边形结构的微小杆，并且8成元的环与{113}的表面结构有关。基于能量计算证实，重建结构中的每个自上间隙原子的能量明显小于估计的孤立间隙原子的能量。2。在Si掺杂的GAAS晶体中观察到Si掺杂的GAAS晶体晶体晶体的平面缺陷。已经表明，传播电子显微镜研究已表明，两个现有的{111}晶体学净平面在两个现有的{111} net净平面之间插入GAAS晶体中。furthermore。我们提出了一种基于氢诱导的SI诱导的新原子模型，该模型是基于高质量的电子图像的精确图像，这些模型。衍射和显微镜在分析半导体材料中点 - 缺陷聚集物的原子结构非常有用。较少的

项目成果

S. Takeda: "Interior-Lattice-Reconstruction in a Si Crystal: Atomic Structure of the {113}Planar Defect in Si (in Japanese)" Bulletin of the Japanese Crystallographic Society. 33. 333-338 (1991)

S. Takeda：“Si 晶体中的内部晶格重建：Si 中 {113} 平面缺陷的原子结构（日语）”日本晶体学会通报。

S.TAKEDA,S.MUTO and M.HIRATA: "Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge" Materials Science Forum. 83-87. 309-314 (1992)

S.TAKEDA、S.MUTO 和 M.HIRATA：“电子辐照硅和锗中间隙缺陷的原子结构”材料科学论坛。

M.Koyama and S.Takeda: "Atomic structure and energy of the{113}planar interstitial defects in Si" Phys.Rev.B46. 12305-12315 (1992)

M.Koyama 和 S.Takeda：“Si 中{113}平面间隙缺陷的原子结构和能量”Phys.Rev.B46。

竹田 精治、井部 克彦: "電子顕微鏡で捉えたSiの新しい2次欠陥構造" 電子顕微鏡. 27. 59-62 (1992)

Seiji Takeda、Katsuhiko Ibe：“电子显微镜捕获的 Si 中的新二次缺陷结构”电子显微镜。 27. 59-62 (1992)

M. Koyama and S. Takeda: "Atomic structure and energy of the {113} planar interstitial defects in Si" Phys. Rev. B46. 12305-12315 (1992)

M. Koyama 和 S. Takeda：“Si 中 {113} 平面间隙缺陷的原子结构和能量”Phys。