InGaN-based micro-light emitting diode (LED) arrays integrated with a driving circuit backplane

集成驱动电路背板的 InGaN 基微型发光二极管 (LED) 阵列

• 批准号: 520229-2017
• 负责人: Ban, Dayan
• 金额: $ 20.68万
• 依托单位: University of Waterloo
• 依托单位国家: 加拿大
• 项目类别: Collaborative Research and Development Grants
• 财政年份: 2020
• 资助国家: 加拿大
• 起止时间: 2020-01-01 至 2021-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=697095
• 关键词: InGaN; based; micro; light; emitting

InGaN/GaN based micrometer-sized light emitting diode (µ-LED) is emerging as a very promising technology for next generation high-resolution, high-efficiency displays because of its significant advantages over the existing products - its luminance level can be several orders of magnitude higher than liquid-crystal-device (LCD) and organic light-emitting diode (OLED) displays. It has low voltage requirements and is amenable to hybrid complementary metal-oxide semiconductor (CMOS) and integrated-circuit (IC) assembly. However, this technology can't be commercialized until one critical question can be answered - how to achieve high resolution while still retaining high emission efficiency? In this project, we will work closely with our industry partner - VueReal Technologies Inc., a Waterloo-based high-tech company, to explore and develop a new technical approach that can enhance the optical emission efficiency of µ-LEDs in a high-resolution two-dimensional (2D) array format. The 2D µ-LED arrays are integrated with a driving circuit backplane. The research objectives include 1) To develop an optimized dry and/or wet etching process for minimizing sidewall defects/impurities, 2) To fabricate 2D blue µ-LED array devices for achieving optimum device performance, 3) To develop a new detaching and transferring approach to integrate the blue µ-LED devices with an IC backplane substrate, 4) To design a CMOS-based IC backplane that drives the 2D µ-LED array for high-quality and uniform optical emission. This project will also provide an excellent opportunity for highly qualified personal (HQP) to gain hands-on experience with device fabrication and characterization, as well as display technologies. This collaboration project will provide the much urgently-needed expertise and facilities at the University of Waterloo to the industry partner for their device R&D activities. It is expected that novel display techniques/prototypes derived from this project can be commercialized by the industry partner, which would establish a leadership position for the industry partner within this fast-growing portable device market, such as virtual reality (VR) devices, augmented reality devices, smartphones, wearable electronics.

基于 InGaN/GaN 的微米尺寸发光二极管 (μ-LED) 正在成为下一代高分辨率、高效率显示器的一项非常有前途的技术，因为它比现有产品具有显着优势 - 其亮度水平可以提高几个数量级它的电压要求低，并且适合混合互补金属氧化物半导体 (CMOS) 和集成电路。然而，在解决一个关键问题之前，这项技术无法商业化——如何在保持高发射效率的同时实现高分辨率？在这个项目中，我们将与我们的行业合作伙伴 VueReal Technologies Inc 密切合作。 .，一家位于滑铁卢的高科技公司，探索和开发一种新技术方法，可以提高高分辨率二维 (2D) 阵列格式的 µ-LED 的光学发射效率 2D µ-LED 阵列。集成了一个研究目标包括 1) 开发优化的干法和/或湿法蚀刻工艺以最大限度地减少侧壁缺陷/杂质，2) 制造 2D 蓝色 µ-LED 阵列器件以实现最佳器件性能，3) 开发一种新的分离和转移方法将蓝色 µ-LED 器件与 IC 背板基板集成，4) 设计基于 CMOS 的 IC 背板，驱动 2D µ-LED 阵列实现高质量和均匀的光学发射。该项目还将为高素质人员（HQP）提供绝佳的机会，以获得器件制造和表征以及显示技术方面的实践经验。该合作项目将为滑铁卢大学提供急需的专业知识和设施。预计行业合作伙伴可以将源自该项目的新颖显示技术/原型商业化，这将为行业合作伙伴在这个快速增长的便携式设备市场中奠定领导地位。例如虚拟现实（VR）设备、增强现实设备、智能手机、可穿戴电子产品。