Preparation of ion conductive thin films in reaction field assisted by some excitation method

激发法辅助反应场制备离子导电薄膜

• 批准号: 09650815
• 负责人: FUWA Akio
• 金额: $ 2.3万
• 依托单位: Waseda University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09650815/
• 关键词: YSZ; MOCVD; Thin films; Crystal structure; 導電率; 複合反応場; イオン導電性; YSZ; MOCVD; Thin films; Crystal structure; 導電率; 複合反応場; イオン導電性

Yttria-Stabilized Zirconia (YSZ) has high potential to be used as an electrolyte of solid-oxide fuel cell (SOFC). However the high generation-efficiency of SOFC has not been yet achieved due to the high internal of bulk electrolyte. The resistance becomes lower with the decrease of electrolyte thickness. The aim of this study is the low-temperature preparation of YSZ thin films by plasma-enhanced metal organic chemical vapor deposition (PEMOCVD). YSZ solid electrolye thin films were prepared from Zr (t-OCィイD24ィエD2HィイD29ィエD2)ィイD24ィエD2, Y (CィイD211ィエD2HィイD219ィエD2OィイD22ィエD2)ィイD23ィエD2 and evaluated the crystallization. The composition of YSZ thin films was controlled by the change of the vapor pressure of precursors and analyzed by XRF. Relationship between the change of Y-concentration in the thin films and the structural characterizations were examined from the measurement of SEM, XRD and conducitivity by complex impedance plot. The effect of the plasma-enhanced reaction was clarified by … More the comparison of the YSZ thin films prepared by PEMOCVD and thermal MOCVD from the viewpoint of the microscopic structure and the residual carbon. These properties were examined by measurement of SEM and FT-IR spectrum.In the first year, inductively-coupled RF plasma-enhanced metal organic chemical vapor deposition apparatus was produced. In the second year, YSZ thin films (in the composition range 3.1〜5.1mol% Y) could be prepared. The crystal structure was the mixture of monoclinic and cubic. The conductivity became higher with the increase of Y-content in the thin films. However, the conductivity was lower than bulk materials two digit. In this year, YSZ thin films (in the composition range 3〜12mol% YィイD22ィエD2OィイD23ィエD2) could be prepared. Y/Zr ratio in the YSZ thin films was found to be lower than the Y (CィイD211ィエD2HィイD219ィエD2OィイD22ィエD2)ィイD23ィエD2/Zr(t-OCィイD24ィエD2HィイD29ィエD2)ィイD24ィエD2 raito.These results indicate that the Y is difficult to be solute in the preparation films. The crystal structure of these compositions was cubic by returning predicition of the phase diagram. The surface morphology was denser with the increase of Y-content in the YSZ thin films and by applying the plasma. The residual carbon originated for the C-H bond was decreased by the plasma-enhanced reaction. Less

Yttria稳定的氧化锆（YSZ）具有很高的潜力，可以用作固体氧化物燃料电池（SOFC）的电解质。但是，由于大量电解质的内部内部，SOFC的高产生效率尚未达到。这项研究的目的是通过等离子体增强的金属有机化学蒸气沉积（PEMOCVD）对YSZ薄膜的低温制备。 YSZ实心电解薄膜由ZR（T-OCII D24E D2HE D29E D2）II D24E D2，Y（CII D211E D219E D219E D219E D2OE D22E D222E D2）II D23E II D23E D2制备YSZ固体电解膜。 YSZ薄膜的组成由前体的蒸气压的变化控制，并通过XRF进行分析。通过复杂的阻抗图从SEM，XRD的测量和电导率中检查了薄膜中Y浓度的变化与结构特征之间的关系。通过……从显微镜结构的角度和残留碳的角度来看，通过……由PemoCVD和Thermal MOCVD制备的YSZ薄膜的比较来阐明等离子增强反应的效果。通过测量SEM和FT-IR光谱检查了这些特性。在第一年，产生了电感耦合的RF血浆增强金属有机化学蒸气沉积设备。在第二年，可以准备YSZ薄膜（在组成范围为3.1至5.1mol％y）中。晶体结构是单斜晶和立方体的混合物。随着薄膜中Y容量的增加，电导率变得更高。但是，电导率低于散装材料两位数。在今年，YSZ薄膜（在YSZ薄膜中的组成范围为3至12mol％y/Zr比率低于Y（CII D211E D2HII D219E D219E D22E D22E D22E D2 D2）Y23E D2/ZR（T-OCII D24E D24E D22HII D29E D29E D29E D29E D29E YS） Y在制备膜中很难通过返回相图的预测，而YSZ薄膜中的Y含量增加，并且通过等离子体降低了C-H键