Development of Infra-Red Spectroscopy for the Nivestigation of High Temperature Gasdous Species and its Application to Halide Species.

用于研究高温气体物质的红外光谱法的发展及其在卤化物物质中的应用。

基本信息

批准号：
63550496
负责人：
FUWA Akio
金额：
$ 1.22万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1990
项目状态：
已结题

项目摘要

In this investigation, a CVD reactor system of hot-wall type for precipitation reaction analysis was constructed, in which a infra-red spectroscopy was incorporated for the gas species identification. The kinetic analysis of silicon precipitation reaction from tri-chlorosilane diluted by hydrogen was studied at temperatures from 950 K to 1300 K. The followings are the results of this investigation :(1) There were two distinct regions in the temperature dependency of the reaction rate where the transition temperature was around 1200 K. The activation energy for the lower temperature region was 62.1 Kcal/mole and the one for the latter region was 2.2 Kcal/mole.(2) Through the infra-red spectroscopic analysis of the gaseous species, there was observed a maximum concentration of di-chlorosilane at around 1020 K. This observation suggests that the following reaction mechanism at the lower temperatures ;SiHCl_3 (g) + H_2 (g) = SiH_2Cl_2 (g) + HCl (g)SiH_2Cl_2 (g) = SiCl_2 (g) + H_2 (g)SiCl_2 (g) = Si (s) + 2 HCl (g)Above 1020 K, silicon tetrachloride had gradually increased and di-chlorosilane decreased. From this observation,4 SiHCl_3 (g) = Si (s) + 3 SiCl_4 (g) + H_2 (g)2 SiH_2Cl_2 (g) = Si (s) + SiCl_4 (g) + 2 H_2 (g)(3) The reaction was the first order with the concentration of tri-chlorosilane in the experimental region of this study.The above-mentioned is the summary of this investigation and the further study into the reaction mechanism is planned at present.

在这项研究中，构建了一个用于沉淀反应分析的热壁型 CVD 反应器系统，其中结合了红外光谱仪来识别气体种类。研究了在 950 K 至 1300 K 温度范围内氢稀释三氯硅烷的硅沉淀反应的动力学分析。以下是本次研究的结果：(1) 反应速率的温度依赖性存在两个不同的区域其中转变温度约为 1200 K。较低温度区域的活化能为 62.1 Kcal/mole，后一区域的活化能为 2.2 Kcal/mole。(2)通过对气态物质的红外光谱分析，在 1020 K 左右观察到二氯硅烷的最大浓度。这一观察结果表明，在较低温度下的反应机理如下：SiHCl_3 (g) + H_2 (g) = SiH_2Cl_2 ( g) + HCl (g)SiH_2Cl_2 (g) = SiCl_2 (g) + H_2 (g)SiCl_2 (g) = Si (s) + 2 HCl(g) 在1020 K以上，四氯化硅逐渐增加，二氯硅烷逐渐减少。由此观察，4 SiHCl_3 (g) = Si (s) + 3 SiCl_4 (g) + H_2 (g)2 SiH_2Cl_2 (g) = Si (s) + SiCl_4 (g) + 2 H_2 (g)(3)本研究实验区域内三氯氢硅的浓度为一级反应。以上是本次研究的总结，目前计划对其反应机理进行进一步的研究。