Control of microstructures of silicon nanocrystals by ion implantation and their application for optical devices.

离子注入控制硅纳米晶的微观结构及其在光学器件中的应用。

基本信息

批准号：
17510098
负责人：
IWAYAMA Tsutomu
金额：
$ 2.3万
依托单位：
Aichi University of Education
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17510098/
关键词：
Silicon Ion Implantation Nanocrystals Silicon Photonics Optical Properties Luminescence RTA Optical Devices

项目摘要

Si ion implantation into Si0_2 and subsequent high temperature anneals induce the formation of embedded luminescent Si nanocrystals. The potentialities of rapid thermal annealing (RTA) to enhance the photoluminescence (PL) as well as those to induce low temperature formation of luminescent Si nanocrystals have been investigated. Si ion implantation was used to synthesize specimens of Si0_2 containing supersaturated Si. The implanted samples were rapidly annealed only for a few minutes. After that, in some cases before that, the samples were annealed for a few hours using a conventional furnace to induce Si precipitation. PL spectra were measured at various steps of anneal processes. The luminescence intensity is strongly enhanced with RTA prior to a conventional furnace anneal. The luminescence intensity, however, decreases when RTA follows conventional furnace annealing. It is found that the order of heat treatment is an important factor in intensities of the luminescence. Enhancement is also found to be typical for low dose samples. Moreover, the visible photoluminescence is found to be observed even after furnace anneal below 1000 ℃, only for RTA treated samples. In forming the luminescent Si nanocrystals in a Si0_2 matrix from supersaturation, decomposition, segregation, diffusion, nucleation, aggregation, growth and crystallization processes are clearly important. As a result of diffusion limited segregation, a number of small aggregates will be formed and they act as a nucleation point.In the present research project, we have found that the luminescence intensity is strongly enhanced with a rapid thermal anneal prior to a conventional furnace anneal and the luminescence intensity decreases with a rapid thermal annealing after a conventional furnace anneal. Moreover, a post implantation rapid thermal anneal prior to a furnace anneal is effective to achieve low temperature formation of luminescent Si nanocrystals.

Si 离子注入 SiO_2 和随后的高温退火诱导嵌入发光 Si 纳米晶体的形成快速热退火 (RTA) 增强光致发光 (PL) 以及诱导低温形成发光 Si 纳米晶体的潜力。研究采用Si离子注入来合成含有过饱和Si的SiO_2样品，然后将注入的样品快速退火几分钟。在此之前的某些情况下，使用传统炉退火几个小时以诱导硅沉淀，在退火过程的各个步骤中测量发光强度，然后再进行传统炉发光。然而，当 RTA 进行常规炉退火时，发光强度会降低。此外，还发现热处理顺序是发光强度增强的一个重要因素。发现即使在低于1000℃的炉退火后也能观察到光致发光，仅对于RTA样品而言，在经过过饱和处理的SiO_2基体中形成发光Si纳米晶体时，经过过饱和、分解、偏析、扩散、成核、聚集、生长和结晶过程显然是重要的。由于扩散限制偏析，将形成许多小聚集体，它们充当成核点。在本研究项目中，我们发现，在常规炉退火之前进行快速热退火，发光强度会大大增强，而在常规炉退火之后进行快速热退火，发光强度会降低。此外，在炉退火之前进行注入后快速热退火。有效实现了发光硅纳米晶体的低温形成。

项目成果

期刊论文数量（18）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Lamp annealing effects on the formation process of implanted silicon nanocrystals in SiO_2.

灯退火对SiO_2中注入硅纳米晶形成过程的影响

DOI：
发表时间：
2007
期刊：
Nucl. Instrum. Methods B 257
影响因子：
0
作者：
J.Ariake;T.Chiba;N.Honda;J.Ariake;有明順;J.Ariake;有明順;有明順;J.Ariake;J.Ariake;J.Ariake;J.Ariake;有明順(共著);J.Ariake (one of the coauthors);有明順;T.S.Iwayama
通讯作者：
T.S.Iwayama

Enhancement of luminescence from encapsulated Si nanocrystals in SiO_2 with rapid thermal anneals.

通过快速热退火增强 SiO_2 中封装的硅纳米晶体的发光。

DOI：
发表时间：
2005
期刊：
Nucl.Instrum.Methods B 230
影响因子：
0
作者：
T.S.Iwayama;T.Hama;D.E.Hole;I.W.Boyd
通讯作者：
I.W.Boyd

Low temperature formation of luminescent Si nanocrystals in SiO_2 with rapid thermal anneals.

通过快速热退火在 SiO_2 中低温形成发光硅纳米晶体。

DOI：
发表时间：
2006
期刊：
Proceedings of the 24th Symposium on Materials Science ＆ Engineering Research Center of Ion Beam Technology 24
影响因子：
0
作者：
T.S.Iwayama;T.Hama;D.E.Hole;T.Hama
通讯作者：
T.Hama

RTA effects on the formation process of embedded luminescent Si nanocrystals in SiO_2.

RTA对SiO_2中嵌入发光硅纳米晶形成过程的影响。

DOI：
发表时间：
期刊：
Microelectronics Reliability (in press)
影响因子：
0
作者：
T.S.Iwayama;T.Hama;D.E.Hole;I.W.Boyd;T.S.Iwayama;M.Inamo;T.S.Iwayama;T.S.Iwayama
通讯作者：
T.S.Iwayama

Control of embedded Si nanocrystals in SiO_2 by rapid thermal anneals and enhanced photoluminescence characterization.

通过快速热退火和增强光致发光表征控制 SiO_2 中嵌入的 Si 纳米晶体。