Ion irradiated modifications on magnetostrictive thin films

磁致伸缩薄膜的离子辐照改性

• 批准号: 16560616
• 负责人: MATSUMURA Yoshihito
• 金额: $ 2.24万
• 依托单位: Tokai University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560616/
• 关键词: Ion Irradiation; Giant Magnetostriction; Thin Film; Terbium; Samarium; Iron; Aluminum; Inner Stress; 超磁歪材料; プラズマプロセス; 照射損傷層; 希土類; 鉄合金; イオンピーニング; 磁歪; 残留応力

Magnetostrictive properties of Ar ion-irradiated R-Fe(R : Tb, Sm) thin films were studied with respect to internal stress. Film samples were prepared by a magnetron sputtering. The film composition was Tb_<36>Fe_<64> and Sm_<27>Fe_<73> with amorphous structures. After the deposition, film samples were irradiated with Ar ions at 10 keV, 2.7-8.0×10^<-1> A/m^2 and doses of 1x10^<22> ions/m^2. Magnetostrictive susceptibility of the Tb_<36>Fe_<64> film decreased with increasing ion current density by 5.5x10^<-1> A/m^2, however, improved with high current density above 7.0 x10^<-1> A/m^2. Magnetostrictive susceptibility of Sm_<27>Fe_<73> increased with increasing ion current density up to 5.5 x10^<-1> A/m^2. This was caused by increase of compressive stress induced by Ar ion irradiation with low current density and stress relaxation by increased temperature during irradiation with high current density. The magnetic properties were found profoundly influenced by stresses induced by competitive factors such as irradiation damage and thermal annealing effect.

采用磁控溅射法制备了Ar离子辐照的R-Fe(R:Tb,Sm)薄膜的磁致伸缩性能及其内应力。薄膜成分为Tb_<36>Fe_<64>。具有非晶结构的<27>Fe_<73>沉积后，用10keV的Ar离子照射薄膜样品， 2.7-8.0×10^<-1>A/m^2和1x10^<22>离子/m^2剂量时，Tb_<36>Fe_<64>薄膜的磁致伸缩磁化率随着离子电流密度增加5.5而降低。然而，x10^<-1> A/m^2 通过高于 7.0 x10^<-1> A/m^2 的高电流密度得到改善。 Sm_<27>Fe_<73>的磁致伸缩磁化率随着离子电流密度增加至5.5x10^-1A/m^2而增加，这是由于低电流密度和Ar离子辐照导致的压缩引起的应力增加造成的。研究发现，在高电流密度辐照过程中，温度升高会导致应力松弛，而磁性能受到辐照损伤和热退火效应等竞争因素引起的应力的深刻影响。

项目成果

Composition Dependence on Compressive Magnetostriction of Fe-Sm Binary Alloy Thin Films

• DOI: 10.2320/matertrans.46.3063
• 发表时间: 2005-12
• 期刊: Materials Transactions
• 影响因子: 1.2
• 作者: Y. Nishi;Y. Matsumura;A. Kadowaki;S. Masuda

直流マグネトロンスパタリング蒸着法の基板温度制御によるFe2.45Sm合金薄膜組織変化に伴う圧縮超磁歪と磁歪感受率

直流磁控溅射沉积法中基底温度控制与Fe2.45Sm合金薄膜结构变化相关的压缩超磁致伸缩和磁致伸缩磁化率

• 发表时间: 2006
• 期刊: 日本金属学会誌 70・8
• 作者: Zhan Jie Wang;Zhan Jie Wang;Zhan Jie Wang;Zhan Jie Wang;Zhan Jie Wang;原稿記載なし;平 良夫;久保大司;Y.Taira et al.;D.Kubo et al.;平 良夫;久保大司;森田真英;田中丸天兵;増田進吾
• 通讯作者: 増田進吾

Magnetostrictive Characteristics of Fe-Al Films

Fe-Al薄膜的磁致伸缩特性

• 发表时间: 2006
• 期刊: J.Japan Inst.Metals 70[8]
• 作者: Zhan Jie Wang;Zhan Jie Wang;Zhan Jie Wang;Zhan Jie Wang;Zhan Jie Wang;原稿記載なし;平 良夫;久保大司;Y.Taira et al.;D.Kubo et al.;平 良夫;久保大司;森田真英;田中丸天兵;増田進吾;高橋啓介;Y.Nishi;松岡範佳;西 義武;K.Muramatsu;増田 進吾;M.Morita et al.
• 通讯作者: M.Morita et al.

R-Fe(R : Tb,Sm)薄膜の磁歪へ及ぼすArイオン照射により誘起された残留応力の影響

Ar离子辐照引起的残余应力对R-Fe(R:Tb,Sm)薄膜磁致伸缩的影响

• 发表时间: 2005
• 期刊: 日本金属学会誌 69.8
• 作者: 増田 進吾;松村 義人;西 義武;竹内 光明
• 通讯作者: 竹内 光明

磁性材料薄膜の製造方法

磁性材料薄膜的制造方法

• 发表时间: 2005