Study on yellow/green semiconductor laser diodes

黄/绿半导体激光二极管的研究

• 批准号: 16560308
• 负责人: NOMURA Ichirou
• 金额: $ 2.37万
• 依托单位: Sophia University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560308/
• 关键词: green emission; yellow emission; semiconductor laser diode; II-VI compound semiconductor; InP substrate; superlattice; n-tvne cloning; light emitting diode; レーザ; BeZnSeTe; BeZnCdSe; 超寿命動作; ZnCdSe; タイプIIヘテロ接合; 量子井戸; フォトルミネッセンス; MgZnCdSe; 分

We investigated Be composition dependencies of the luminescence property of BeZnSeTe II-VI compound semiconductors grown on InP substrates, resulting in obtaining bright luminescence in green region. Then we proposed a MgSe/BeZnSeTe superlattice(SL) barrier layer to confine carriers and optical field into the BeZnSeTe active layer, and improved the growth conditions such as the Zn irradiation at the SL interfaces. Based on these results, we fabricated light emitting devices. The device consisted of a BeZnSeTe quantum well active layer sandwiched by MgSe/BeZnSeTe SL barrier layers, MgSe/ZnCdSe SL n-cladding, and MgSe/BeZnTe SL p-cladding layers. In order to reduce the hetero barrier at the type-II hetero junction of the n-cladding and the n-barrier layers, we introduced a MgSe/ZnCdSe graded SL structure into the hetero junction. In the graded SL, the MgSe layer thickness ratio was gradually increased from 40 to 60 % along the growth direction from the n-cladding to the n-barrier side. By current injections, we observed green emissions around 530 nm. By aging tests of the devices under direct current injections, we obtained long life operations beyond 4800 h with no catastrophic degradation.In addition, we developed new p-cladding layer materials. We proposed a new doping technology that is inserting high p-doped ZnTe or ZnSeTe layers at regular intervals into ZnCdSe and MgSe/ZnCdSe SL layers which are inferior in p-doping, and experimentally proved the technology to be effective for p-doping. For example, the p-doping concentration of ZnCdSe which had been about 31016 cm-3 before was remarkably improved to be 8×1017 cm-3 using the technology. In the case of the MgSe/ZnCdSe SL, a high p-doping concentration of 4.6×1017 cm-3 was obtained at a wide bandgap of 2.33 eV. Applying the doping technology for the p-cladding layer, we fabricated light emitting devices. Consequently we obtained orange emissions around 600 nm.

我们研究了在INP底物上生长的Beznsete II-VI化合物半导体的发光特性的组成依赖性，从而导致在绿色区域获得明亮的发光。然后，我们提出了一个MGSE/BEZNSETE超晶格（SL）屏障层，以将载体和光场限制在Beznsete活动层中，并改善了生长条件，例如SL接口处的Zn辐射。基于这些结果，我们制造了发光装置。该设备由一个由MGSE/BEZNSETE SL屏障层，MGSE/ZNCDSE SL N-CLADDING和MGSE/BEZNTE SL P-CLADDING层夹在夹杂的Beznsete量子良好的活性层组成。为了减少N-CLADDING和N级层层的II型异质交界处的异质屏障，我们将MGSE/ZNCDSE分级SL结构引入了异质交界处。在分级SL中，从N层到N级式侧面，MGSE层厚度比逐渐从40％增加到60％。根据目前的注射，我们观察到530 nm左右的绿色排放。通过对直流注射的设备的老化测试，我们获得了4800小时以上的长寿操作，没有灾难性的降解。此外，我们开发了新的P固定层材料。我们提出了一种新的兴奋剂技术，该技术正在定期插入高P掺杂的Znte或Znsete层中的Zncdse和MGSE/Zncdse Sl层，这些层在P掺杂量不足，并在实验中证明了该技术可有效地用于P掺杂。例如，使用该技术的ZnCDSE的P掺杂浓度大约31016 cm-3的浓度为8×1017 cm-3。在MGSE/ZnCDSE SL的情况下，在2.33 eV的宽带gap处获得了高P掺杂浓度为4.6×1017 cm-3。为P层层应用掺杂技术，我们制造了600 nm左右的光排放。

项目成果

Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II-VI compound superlattices on InP substrates

Zn 辐照对 InP 衬底上 MgSe/BeZnSeTe II-VI 化合物超晶格 MBE 生长的影响

• 发表时间: 2007
• 期刊: Journal of Crystal Growth 301/302
• 作者: Ichirou;Nomura;Tomohiro;Yamazaki;Hiroaki;Hayashi;Koichi;Hayami;Masaki;Kato;Katsumi;Kishino;Ichirou Nomura
• 通讯作者: Ichirou Nomura

Long life operations over 5000 hours of BeZnSeTe/MgZnCdSe visible light emitting diodes on InP substrates

InP 基板上的 BeZnSeTe/MgZnCdSe 可见光发光二极管的使用寿命长达 5000 小时以上

• 发表时间: 2006
• 期刊: physica status solidi(b) Vol.243,No.4
• 作者: Ichirou;Nomura;Tomohiro;Yamazaki;Hiroaki;Hayashi;Koichi;Hayami;Masaki;Kato;Katsumi;Kishino;Ichirou Nomura;Ichirou Nomura;Ichirou Nomura
• 通讯作者: Ichirou Nomura

High p-type doping of MgZnCdSe on InP substrates by inserting ZnTe thin layers

通过插入 ZnTe 薄层在 InP 衬底上高 p 型掺杂 MgZnCdSe

• 发表时间: 2006
• 期刊: physica status solidi(c) Vol.3,No.4
• 作者: Ichirou;Nomura;Tomohiro;Yamazaki;Hiroaki;Hayashi;Koichi;Hayami;Masaki;Kato;Katsumi;Kishino;Ichirou Nomura;Ichirou Nomura;Ichirou Nomura;Takumi Saitoh
• 通讯作者: Takumi Saitoh

Yellow-green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates

ZnCdTe/MgZnSeTe 激光二极管在 ZnTe 基底上的黄绿激光操作

• 发表时间: 2006
• 期刊: physica status solidi(b) Vol.243,No.4
• 作者: Ichirou;Nomura;Tomohiro;Yamazaki;Hiroaki;Hayashi;Koichi;Hayami;Masaki;Kato;Katsumi;Kishino;Ichirou Nomura;Ichirou Nomura
• 通讯作者: Ichirou Nomura

Zn irradiation effects in MBE growth of MgSeBeZnSeTe II-VI compound superlattices on InP substrates

Zn 辐照对 InP 衬底上 MgSeBeZnSeTe II-VI 化合物超晶格 MBE 生长的影响

• 发表时间: 2007
• 期刊: Journal of Crystal Growth Vol. 301-302
• 作者: Ichirou;Nomura;Tomohiro;Yamazaki;Hiroaki;Hayashi;Koichi;Hayami;Masaki;Kato;Katsumi;Kishino
• 通讯作者: Kishino