Research on a highly efficient semiconductor THz emitting source using a metal thin-film mesh

基于金属薄膜网格的高效半导体太赫兹发射源的研究

• 批准号: 16560288
• 负责人: AKAZAWA Masamichi
• 金额: $ 2.37万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560288/
• 关键词: THz; metal mesh; metal hole array; GaAs; InAs; surface plasmon-plariton; TDS; emitter; LT-GaAs

It was confirmed that a metal mesh having an appropriate structure exhibits a high transmittance as a filter in the THz region. Especially a filter with the thickness much smaller than the transmitted wavelength does not have the cutoff property resulting in a high transmittance even for the tilted incidence. According to the results of simulation and experiment, it was found that the surface plasmon-polariton (SPP) contributes the transmission property. Then there is possibility that the boundary condition at the semiconductor surface for the THz emission is modified by attaching a metal mesh where the SPP modes exists.Actually a fundamental structure of the new THz emitter was fabricated and characterized. Though the THz generation inside the semiconductor is intense for large exit angle, the critical angle resulting from Snell's law limits the emission to the outside. In the tested structure, it was found that the metal mesh changed the boundary condition at the dielectric interface, resulting in an extraction of the emission to the direction beyond the critical angle. Therefore THz emission can be enhanced in a optimized structure. In the tested structure, the semiconductor surface was irradiated with the laser pulse through the metal mesh resulting in a decreased excitation power. Still a sufficient emission was observed. Thus, in the structures with a transparent metal mesh or with the excitation at the back surface, further enhancement of the emission can be achieved resulting in a highly efficient emission.Another candidate for a THz emitter is a quantum structure. However, the surface passivation is an important issue in an actual use. In this work, a surface passivation method was optimized for GaAs/AlGaAs quantum structures, resulting in an improvement of the device performance.One of the important issues for developing and improving the semiconductor THz emitter is to control the surfaces and interfaces of semiconductors appropriately.

已经证实，具有适当结构的金属网格在THZ区域表现出很高的透射率。尤其是厚度小得多的滤波器，即使倾斜发射率也不会带来截止特性。根据模拟和实验的结果，发现表面等离子体 - 孔子（SPP）贡献了透射特性。然后，通过将SPP模式存在的金属网固定在半导体表面上的边界条件可以修改。尽管半导体内部的THZ产生对于大出口角度是强烈的，但Snell定律引起的临界角度限制了对外部的发射。在经过测试的结构中，发现金属网将改变了介电界面处的边界条件，从而导致发射到临界角度以外的方向。因此，可以在优化的结构中增强THZ的发射。在测试的结构中，通过金属筛网的激光脉冲照射半导体表面，导致激发能力降低。仍然观察到足够的排放。因此，在具有透明金属网格的结构或在后表面的激发的结构中，可以进一步增强发射，从而产生高效的发射。其他候选者的候选者是量子结构。但是，表面钝化是实际用途的重要问题。在这项工作中，针对GAAS/藻类量子结构进行了优化的表面钝化方法，从而改善了设备性能。开发和改进半导体THZ发射器的重要问题之一是控制半导体的表面和接口。

项目成果

THz Transmission Propertiess of Metal Hole-Array Filters.

金属孔阵列滤波器的太赫兹传输特性。

• 发表时间: 2006
• 期刊: Collected Abstracts of 2006 RCIQE International Seminar (Sapporo, February 9-10,2006)
• 作者: Y.Yamazaki;M.Akazawa;E.Sano
• 通讯作者: E.Sano

Terahertz transmission property of a thin metal hole-array filter

薄金属孔阵列滤波器的太赫兹传输特性

• 发表时间: 2005
• 期刊: Japan J. Appl. Phys. vol. 44, no. 49
• 作者: K.Narahara;T.Otsuji;E.Sano;E.Sano;K.Narahara;K.Inafune;K.Narahara;T.Tanaka;K.Inafune;E.Sano;K.Inafune;Y.Yamazaki;楢原浩一;M.Tanaka;K.Inafune;K.Inafune;E.Sano;K.Inafune;Y.Yamazaki;T.Tanaka;M.Akazawa
• 通讯作者: M.Akazawa

金属薄膜による表面周期構造を利用したTHz波フィルタ

利用金属薄膜表面周期结构的太赫兹波滤波器

• 发表时间: 2004
• 期刊: 電子情報通信学会技術研究報告 Vol. 109, no. 296
• 作者: Y.Yamazaki;K.Inafune;M.Akazawa;E.Sano;M.Tanaka;K.Inafune;K.Inafune;佐野栄一;E.Sano;K.Inafune;Y.Yamazaki;T.Tanaka;山崎雄介;E.Sano;佐野栄一;田中毅
• 通讯作者: 田中毅

Transmission characteristics of THz perfect-conductor perforated plate filters with two-dimensional periodic holes

二维周期孔太赫兹完美导体穿孔板滤波器的传输特性

• 发表时间: 2005
• 期刊: Abstract of 2005 RCIQE International Seminar vol.1
• 作者: K.Narahara;T.Otsuji;E.Sano;E.Sano;K.Narahara;K.Inafune;K.Narahara;T.Tanaka;K.Inafune;E.Sano;K.Inafune;Y.Yamazaki;楢原浩一;M.Tanaka;K.Inafune;K.Inafune;E.Sano;K.Inafune;Y.Yamazaki;T.Tanaka
• 通讯作者: T.Tanaka

Transmission characteristics through two-dimensional periodic hole arrays perforated in perfect conductors

通过完美导体中穿孔的二维周期性孔阵列的传输特性

• 发表时间: 2006
• 期刊: Jpn. J. Appl. Phys. vol. 45, no. 5A
• 作者: K.Inafune;E.Sano;E.Sano;K.Narahara;K.Inafune;K.Narahara;T.Tanaka
• 通讯作者: T.Tanaka