Transparent P-type Conductive Ternary Oxide Films Prepared by Reactive Sputtering Method

反应溅射法制备透明P型导电三元氧化物薄膜

• 批准号: 16560270
• 负责人: TSUBOI Nozomu
• 金额: $ 2.43万
• 依托单位: Niigata University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560270/
• 关键词: delafossite; CuAlO_2; transparent conductive oxide; p-type oxide; thin films; reactive sputtering; sputtering; oxide electronics; レーザアニール

Cu-Al-O films were prepared on quarts substrates at 500〜700℃ by sputtering alternately the Cu and the Al targets on atomic-layer-scale under Ar-diluted O_2(5〜20%) gas atmosphere, and then annealed at 1050℃ under the nitrogen atmosphere. The [Cu]/[Al] ratio was controlled by changing Cu and Al deposition periods. Composition of as-deposited films corresponded to the slightly oxygen-rich region of the CuO-CuAl_2O_4-Al_2O_3 system. Films as-deposited at 500℃ had amorphous structure, while films as-deposited at 700℃ had CuAl_2O_4 and CuO phases. After thermal annealing, the film composition approached to the Cu_2O-CuAlO_2-Al_2O_3 system line, causing noticeable appearance of CuAlO_2 delafossite phase along with absences of the CuAl_2O_4 and CuO phases. Cu-rich and Al-rich annealed films had additionally Cu_2O phase and amorphous Al_2O_3 phase, respectively. All annealed films exhibited p-type conductivity. The annealed films with [Cu]/[Al]【approximately equal】1 had the absorption edge corresponding to the energy gap of CuAlO_2. These results indicate the change of Cu ion from di-valence to mono-valence through the annealing process, which results the preparation of transparent conductive films dominated by CuAlO_2. We also tried to irradiate the as-deposited films in order to crystallize the amorphous structure to CuAlO_2 delafossite structure by using a KrF laser in the power range of 10〜10^3 mJcm^<-2>. However, we observed no changes of the amorphous structure. At the power more than about 10^2 mJcm^<-2>, laser ablation of the films was observed.

通过在ARDINAMIC-LAYER尺度上吐出AR污染的O_2（5-20​​％）气体气氛，然后在500-700℃夸脱底物上以500-700℃的形式制备Cu-Al-O膜，然后在氮气气氛下在1050℃中退火。 [Cu]/[Al]比率通过更改Cu和Al沉积周期来控制。 AS沉积膜的组成对应于CUO-CUAL_2O_4-AL_2O_3系统的略有氧气区域。在500℃上沉积的电影具有无定形结构，而在700℃的胶片则具有CUAL_2O_4和CUO阶段。热退火后，膜成分接近CU_2O-CAULO_2-AL_2O_3系统线，导致Cualo_2 delafossite阶段的显着外观以及CAUL_2O_4和CUO相的感恩节。富含Cu且富含Al的退火膜分别具有Cu_2O相和无定形AL_2O_3相。所有退火膜均暴露了P型电导率。具有[Cu]/[Al] [大约相等] 1的退火膜的吸收边缘对应于CAULO_2的能隙。这些结果表明，通过退火过程，铜离子从二价变为单价的变化，这导致制备以CAULO_2为主的透明导电膜。我们还试图通过在10〜10〜10^3 MJCM^<-2>的功率范围内使用KRF激光器，将无定形结构结晶为calo_2 delafossite结构。但是，我们观察到无定形结构没有变化。在大约10^2 MJCM^<-2>的功率下，观察到膜的激光消融。