Development for the Synthesis of Very Hard Thin Films by Electron Beam Excited Plasma

电子束激发等离子体合成极硬薄膜的进展

基本信息

批准号：
15560106
负责人：
PETROS Abraha
金额：
$ 2.05万
依托单位：
Meijo University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560106/
关键词：
Electron beam Plasma Boron target Acceleration voltage Substrate bias Sputtering very hard coating BN thin films c-BN膜

项目摘要

The primary plasma sources for the production of atomic nitrogen has been the conventional plasma sources, including electron cyclotron resonance (ECR) plasma, radio frequency (RF) plasma, do glow discharge, cold cathode gun. These plasma sources however use small volume and need a high pressure and discharge voltage to produce sufficient flux of atomic nitrogen for plasma processing. The maximum cross section for nitrogen dissociation is about 60-130 eV. These means that a high dissociation rate of nitrogen can be achieved if the electron energy were around the maximum cross section In this experiment the electron-beam-excited plasma (EBEP) deposition system used was designed to produce electron beam energy of 50-150 eV. At first, the plasma parameters discharge current I_b, acceleration voltage V_a, rf bias voltage V_<dc> and N_2/Ar ratio were determined in view of the deposit thickness and crystal structure to be I_b=3.4A, V_a=120V V_<dc>=600V and N_2/Ar=8/10 sccm. The target substrate distance was then varied and the synthesized films were evaluated The deposition rate of the sputtering system was estimated to be about 10nm/min. This deposition rate is comparable to other sputtering systems reported in literature. In evaluating the synthesized films, the AES results show the synthesized film was formed out of boron and nitrogen atoms with a 1:1 ratio. The bonding state analysis of the FTIR show peaks at 780cm^<-1> and 1370cm^<-1> indicating formation of h-BN thin film. For target substrate distance of 50mm, the hardness and war volume were measured to be 10.3 GPa and 0.013mm^3, respectively. The friction coefficient and surface roughness were both independent of the target substrate distance with values of 4.5nm and 0.085, respectively.

产生原子氮的主要等离子体来源是常规的等离子体来源，包括电子回旋子共振（ECR）等离子体，射频（RF）等离子体，DO GLOW DORON，冷极枪枪。但是，这些等离子体来源使用少量，需要高压和排放电压来产生足够的原子氮的通量进行血浆加工。氮离解的最大横截面约为60-130 eV。这些意味着，如果电子能量在本实验的最大横截面附近，则可以实现高氮的分解速率，该实验中使用了电子束启用的等离子体（EBEP）沉积系统，用于生产50-150 eV的电子束能。首先，根据存款厚度和晶体结构为I_B = 3.4a，v_a = 120V V_ <dc> = 600V = 600V和N_2/AR = 8/10 SCCM，确定了等离子参数排放电流I_B，加速度电压V_A，RF偏置电压V_ <DC>和N_2/AR比率。然后将目标底物距离变化，并评估合成膜的溅射系统沉积速率估计约为10nm/min。该沉积速率可与文献中报道的其他溅射系统相媲美。在评估合成薄膜时，AES结果表明，合成膜是由硼和氮原子以1：1的比例形成的。 FTIR的键合态分析显示，在780cm^<-1>和1370cm^<-1>处的峰值表示H-BN薄膜的形成。对于50mm的目标底物距离，硬度和战争量分别为10.3 GPa和0.013mm^3。摩擦系数和表面粗糙度均与目标底物距离无关，值分别为4.5nm和0.085。