Optical device application of nano-structured electrochromic indium nitride films

纳米结构电致变色氮化铟薄膜的光学器件应用

• 批准号: 13555166
• 负责人: INOUE Yasushi
• 金额: $ 8.13万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555166/
• 关键词: indium nitride; electrochromic; surface nanostructure; light-controlling material; display device; reactive ion plating; surface adsorption; chemical bonding states; 化学結合状態

(1) The InN films were prepared by using an rf reactive ion plating method. After evacuation of a deposit ion chamber under 10-4 Pa, high-purity N2 gas was introduced upto 0.1 1 Pa. A 100 W rf power was applied into the N2 gas through an rf antenna to generate a nitrogen glow discharge. Then indium metal were evaporated from an alumina crucible. The angle of a substrate holder against the indium vapor flux was set at 85 degree.(2) By means of varying the in-plane rotation condition of the substrate holder, the nanostructure of the films can be controlled into columnar, zig-zag and helical nanorods. The crystallinity and chemical composition of the films are almost constant upto 0.3 Pa.(3) The EC properties were observed by using a double-beam optical spectrophotometer. Comparing the EC properties for the three types of nano-structured InN, we found that the order of the EC enhancement as zig-zag, helical and columnar. The zig-zag film showed 2.5 times larger color change quantity than that of the normally-deposited InN film. The speed of color change was independent of the nano-structure, around 2 times faster than the normally-deposited film.

(1)采用射频反应离子镀法制备InN薄膜。将沉积离子室抽真空至10-4 Pa后，引入高纯N 2 气至0.1 1 Pa。通过射频天线将100 W射频功率施加到N 2 气中以产生氮辉光放电。然后从氧化铝坩埚中蒸发出金属铟。基底支架与铟蒸气流的夹角设置为85°。(2)通过改变基底支架的面内旋转条件，可以控制薄膜的纳米结构为柱状、锯齿状和锯齿状。螺旋纳米棒。薄膜的结晶度和化学成分在0.3 Pa以下几乎保持恒定。(3)采用双光束分光光度计观察了EC性能。比较三种纳米结构InN的EC性能，我们发现EC增强的顺序为锯齿状、螺旋状和柱状。 Z字形薄膜的颜色变化量是正常沉积的InN薄膜的2.5倍。颜色变化的速度与纳米结构无关，比普通沉积薄膜快约 2 倍。

项目成果

Atsushi Yamaguchi, Takuya Fujihara, Yasushi Inoue, Osamu Takai: "Synthesis of InN Nanocolumnar Structure by Oblique Ion Plating"IUMRS-ICAM. A4-8. 40-40 (2003)

Atsushi Yamaguchi、Takuy​​a Fujihara、Yasushi Inoue、Osamu Takai：“通过斜离子镀合成 InN 纳米柱结构”IUMRS-ICAM。

A.Yamaguchi, T.Fujihara, Y.Inoue, O.Takai: "ENHANCEMENT OF ELECTROCHROMIC PROPERTY OF INDIUM NITRIDE FILMS BY INTRODUCING BIOMIMETIC MICROSTRUCTURE"Abst. Third Int. Symp. Biomimetic Materials Processing. 1. 39-39 (2003)

A.Yamaguchi、T.Fujihara、Y.Inoue、O.Takai：“通过引入仿生微结构增强氮化铟薄膜的电致变色性能”摘要。

Athushi Yamaguchi, Takuya Fujihara, Yasushi Inoue, Osamu Takai: "Synthesis of InN Nanocolumnar Structure by Oblique Ion Plating"IUMRS-ICAM. A4-8. 40-40 (2003)

Athushi Yamaguchi、Takuy​​a Fujihara、Yasushi Inoue、Osamu Takai：“通过斜离子镀合成 InN 纳米柱结构”IUMRS-ICAM。

A.Yamaguchi, T.Fujihara, K.Hasegawa, Y.Inoue, O.Takai: "ELECTROCHROMIC PROPERTIES OF BIOMIMETIC NANOSTRUCTURED InN FILMS"Abst.4th Int.Symp.Biomimetic Materials Processing. 1. 30-30 (2004)

A.Yamaguchi、T.Fujihara、K.Hasekawa、Y.Inoue、O.Takai：“仿生纳米结构 InN 薄膜的电致变色特性”Abst.4th Int.Symp.仿生材料加工。

Y.Inoue, K.Sano, H.Sugimura, O.Takai: "Crystallinity of Sputter-Deposited Tin-Nitride Thin Films"Proc.Frontiers of Surface Technology 2001. 351 (2001)

Y.Inoue、K.Sano、H.Sugimura、O.Takai：“溅射沉积氮化锡薄膜的结晶度”Proc.Frontiers of Surface Technology 2001. 351 (2001)