In-situ measurements of the irradiation effects in semiconductors under high energy ion irradiation

高能离子辐照下半导体辐照效应的原位测量

• 批准号: 14380233
• 负责人: ASAI Keisuke
• 金额: $ 8.83万
• 依托单位: Tohoku University (2003-2004)The University of Tokyo (2002)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14380233/
• 关键词: high-density excitation; ion beam; time-resolved luminescence spectrum; MgO; electron-hole plasma; CdS; layered perovskite-type compound; multiple quantum-well structure; 照射効果; 拡散; 励起子分子; Urbach則; 量子井戸構造; 発光スペクトル; thermal spike

We analyzed the high-density excitation effects and local high temperature state induced by energetic ions in various semiconductors by measuring the luminescence spectra under irradiation. Time-integrated luminescence spectra were measured with an OMA. Time-resolved spectra were measured with a time-correlated. single photon counting system, which determined the arrival time of ions by detecting with multichannel plates the secondary electrons emitted when the ions transmit a carbon foil.At first, we have succeeded in observing the transient local high-temperature state along an ion trajectory by measuring the luminescence spectra of organic-inorganic layered perovskite materials, which is known to form a natural multiple quantum well structure and exhibit fast luminescence due to free excitons. Furthermore, from the relation between the observed local temperature and the excitation density, it was found that local melting occurs.Secondly, we analyzed the spatial behavior of the excit … More ed carriers from the time-resolved luminescence spectra of CdS. By analyzing the spectral shape of a fast aluminescence band due to electron-hole plasma, we estimated the density and the average energy of the excited carriers when radiative recombination occurs. The obtained results can be quantitatively explained within the diffusion model where polar optical scattering of the excited carriers is taken into account.In addition, we measured the luminescence spectra of a single crystal of MgO, in which the electron lattice coupling is slightly stronger than in semiconductors. As the excitation density increased, a luminescence band due to free excitons reduced its intensity, and finally disappeared. In contrast, another luminescence band appeared at the low-energy side of the free exciton band. Similarly to the case of conventional semiconductors, we attributed the disappearance of the free exciton band and the appearance of the new band to the screening of the Coulomb interaction and the radiative recombination in the collective excited states analogous to the electron hole plasma, respectively. Less

我们通过测量辐照下的发光光谱来分析高能离子在各种半导体中引起的高密度激发效应和局部高温状态，并使用 OMA 测量时间积分发光光谱。单光子计数系统，通过多通道板检测离子透过碳箔时发射的二次电子来确定离子的到达时间。通过测量有机-无机层状钙钛矿材料的发光光谱，沿着离子轨迹研究高温状态，已知该材料形成天然的多量子阱结构，并由于自由激子​​而表现出快速发光此外，从观察到的局部之间的关系。其次，我们从CdS的时间分辨发光光谱中分析了激发载流子的空间行为。根据电子空穴等离子体产生的快速发光带的光谱形状，我们估计了发生辐射复合时受激载流子的密度和平均能量，所获得的结果可以在受激极性光学散射的扩散模型中进行定量解释。另外，我们测量了MgO单晶的发光光谱，其中电子晶格耦合比半导体中的稍强，随着激发密度的增加，由于发光带的增加。自由激子的强度降低，最终消失，相反，与传统半导体的情况类似，在自由激子带的低能侧出现了另一个发光带，我们将其归因于自由激子​​带的消失和新的能带分别用于筛选类似于电子空穴等离子体的集体激发态中的库仑相互作用和辐射复合。

项目成果

M.Koshimizu: "Measurement of the Local Temperature in an Ion Track Using Low-Dimensional Quantum Confinement Structure"Radiation Physics and Chemistry. 66. 35-38 (2003)

M.Koshimizu：“使用低维量子限制结构测量离子轨道中的局部温度”辐射物理和化学。

M.Koshimizu: "Observation of Local Heating in an Ion Track by Measuring the Ion-Induced Luminescence Spectrum"Nuclear Instruments and Methods in Physics Research B. 206. 57-60 (2003)

M.Koshimizu：“通过测量离子诱导发光光谱观察离子轨道中的局部加热”物理研究中的核仪器和方法 B. 206. 57-60 (2003)

M.Koshimizu, K.Shibuya, K.Asai, H.Shibuya: "Observation of Local Heating in an Ion Track by Measuring the Ion-Induced Luminescence Spectrum"Nuclear Instruments and Methods B. (in press).

M.Koshimizu、K.Shibuya、K.Asai、H.Shibuya：“通过测量离子诱导发光光谱观察离子轨道中的局部加热”核仪器和方法 B.（出版中）。

Biexciton luminescence in the layered perovskite-type materials induced by high-energy ion irradiation

高能离子辐照诱导层状钙钛矿型材料中的双激子发光

• 发表时间: 2002
• 期刊: Nonlinear Optics 29
• 作者: J.Liu;S.Koshizuka;Y.Oka;M.Koshimizu
• 通讯作者: M.Koshimizu

K.Shibuya, M.Koshimizu, Y.Takeoka, K.Asai: "Scitillation Properties of (C_6H_<13>NH_3)_2PbI_4 : Exciton luminescence of an organic/inorganic multiple quantum well compound induced by 2.0 MeV protons"Nuclear Instruments and Methods B. 194. 207-212 (2002)

K.Shibuya、M.Koshimizu、Y.Takeoka、K.Asai：“(C_6H_13>NH_3)_2PbI_4 的闪烁特性：2.0 MeV 质子诱导的有机/无机多量子阱化合物的激子发光”核仪器和方法