Study of ultrafast optical signal processing using polarization bistable VCSELs

使用偏振双稳态 VCSEL 进行超快光信号处理的研究

基本信息

批准号：
14350027
负责人：
KAWAGUCHI Hitoshi
金额：
$ 10.82万
依托单位：
Yamagata University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

项目摘要

We investigated mainly the following three topics to create new nonlinear optical functional devices based on the pitchfork bifurcation bistable operation of vertical-cavity surface-emitting lasers (VCSELs) and injection of spin-polarized electrons.(1)We studied the bistable switching between the two orthogonal polarization modes existing in the VCSEL with a squared shape waveguide. As one important all-optical signal processing, we have shown by our simulations that the 3R function (Retiming, Reshaping, and Regenerating) can be obtained using such a VCSEL. This 3R regeneration has a large optical gain of 16 dB for 10 Gbit/s and the optical gain was reduced with an increase in bit rate. The ON-OFF ratio is improved by the 3R regeneration up 100 Gbit/s.(2)We have proposed the optical buffer memory using a two-dimensional array of the ultrafast polarization bistable VCSELs. Optical buffer memory is an important device for photonic packet switching. First, the polarization of the VCSELs are reset by an optical reset pulse. Ultrafast optical signals are converted to spatially parallel signals and injected into the VCSELs together with optical set pulses. Only when the optical signals and the optical set pulses are simultaneously injected into the VCSELs, the VCSELs change their polarization. Therefore, the VCSELs emit the outputs with the polarizations which depend on '0' and '1' of the input signal. The output signal pulses are created from the CW 0°output of the VCSELs and are converted to an ultrafast optical signal.(3)We investigated the electric field dependence of electron spin relaxation during transport in GaAs at 10K. Spin polarizations of photogenerated electrons were measured before and after drifting in the 2μm region of GaAs under photoluminescence from quantum wells. We have found direct evidence that the electron spin relaxation during the drift is accelerated in the higher electric field.

我们主要研究了以下三个主题，以创建基于垂直腔表面发射激光器（VCSEL）干草叉分叉双稳态操作和自旋极化电子注入的新型非线性光学功能器件。（1）我们研究了具有方形波导的 VCSEL 中存在两种正交偏振模式作为一种重要的全光信号处理，我们通过模拟证明了 3R 功能。使用这样的VCSEL可以获得(重定时、重塑和再生)10Gbit/s的16dB的大光增益，并且光增益随着比特率的增加而降低。通过高达 100 Gbit/s 的 3R 再生改进。(2)我们提出了使用超快偏振双稳态 VCSEL 二维阵列的光学缓冲存储器。光缓冲存储器是光子数据包交换的重要器件。首先，超快光信号被转换为空间并行信号，并与光设置脉冲一起注入VCSEL。光信号和光设置脉冲同时注入VCSEL，VCSEL改变其偏振，因此，VCSEL发射具有取决于“0”和“0”的偏振的输出。输入信号的“1”由 VCSEL 的 CW 0° 输出产生，并转换为超快光信号。(3)我们研究了 GaAs 传输过程中电子自旋弛豫的电场依赖性。 10K。在量子阱光致发光下，测量了 GaAs 2μm 区域中光生电子漂移前后的自旋极化，我们发现了漂移过程中电子自旋弛豫加速的直接证据。电场越高。