Study on ultra-fast optical memories using semiconductor lasers

利用半导体激光器的超快光存储器研究

基本信息

批准号：
06452125
负责人：
KAWAGUCHI Hitoshi
金额：
$ 4.35万
依托单位：
Yamagata University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

We have investigated mainly the following four topics to create ultra-fast optical memories by using laser diodes.(1) Polarization switching in strained quantum well laser diodes.The TE-TM mode switching in laser diodes was achieved using GaAsP/AlGaAs tensely strained quantum well for TM mode gain enhancement. The electrodewas devid into two, i.e., a main electrode and a control electrode. The device showed S-shaped polarization bistability in the light vs. current curves, when the control current was changed at the fixed main current.(2) Theoretical estimation of switching speed of polarization bistability.We showed by the numerical analysis using traveling-wave rate equations that flip-flop operation with bit rates of higher than 100Gbit/s can be achieved by pitchfork bifurcation polarization bistability in vertical-cavity surface-emitting lasers (VCSELs).(3) Experimental demonstration of pitchfork bifurcation polarization bistability in VCSELsPitchfork bifurcation polarization bistability has been observed experimentally in a VCSEL for the first time. All-optical flip-flop operation has been successfully demonstrated by injecting the trigger light inputs having the two orthogonal polarizations. When a 0ﾟ (90ﾟ) trigger pulse is injected, the VCSEL changes its polarization from 90ﾟ (0ﾟ) to 0ﾟ (90ﾟ). The laser oscillation with 0ﾟ (90ﾟ) polarization continues even when the injection of the 0ﾟ (90ﾟ) tigger pulse was stoped.(4) Ultra-fast all-optical flip-flop operationWe demonstrated high-speed all-optical flip-flop operation using VCSELs by injecting optical trigger pulses having two orthogonal polarizations. We successfully obtained a 5.3GHz all-optical flip-flop operation with injection power of only - 120muW.We also obtained bistable polarization switching by injecting - 3.5ps ultra-short optical pulses generated from a mode-locked Ti : Sapphire laser.

我们主要研究了以下四个主题，以利用激光二极管创建超快光学存储器。（1）应变量子阱激光二极管中的偏振切换。利用GaAsP/AlGaAs紧张应变量子阱实现了激光二极管中的TE-TM模式切换。 TM模式增益增强良好，电极分为两个，即主电极和控制电极，当(2)偏振双稳切换速度的理论估计。通过行波速率方程的数值分析表明，可以实现比特率高于100Gbit/s的触发器操作。通过垂直腔面发射激光器（VCSEL）中的干草叉分岔偏振双稳定性实现。（3）干草叉分岔偏振双稳定性的实验演示VCSEL 首次在 VCSEL 中通过实验观察到了当 0ﾟ (90ﾟ) 触发脉冲时注入具有两个正交偏振的触发光输入的全光触发器操作。注入后，VCSEL 的偏振从 90ﾟ (0ﾟ) 更改为 0ﾟ(90ﾟ)。即使0ﾟ(90ﾟ)触发脉冲的注入停止，0ﾟ(90ﾟ)偏振的激光振荡仍会继续。(4)超快全光触发器操作我们证明了高速通过注入具有两个正交偏振的光触发脉冲，我们成功地获得了 5.3GHz 的全光触发器操作。全光触发器操作，注入功率仅为 - 120muW。我们还通过注入由锁模钛宝石激光器产生的 - 3.5ps 超短光脉冲来获得双稳态偏振切换。