PREPARATION OF SILICON BASED WIDEGAP SEMICONDUCTOR FILM FROM ORGANO-SILICON MATERIAL

有机硅材料制备硅基宽禁带半导体薄膜

基本信息

批准号：
06650363
负责人：
HATANAKA Yoshinori
金额：
$ 1.28万
依托单位：
SHIZUOKA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650363/
关键词：
Organo-silicon Rimote plasma Silicon carbide film Hexamethyldisilane SiO2 film hydrogen radical reaction Plasma CVD TEOS

项目摘要

The remote hydrogen plasma chemical vapor depositions (RHPCVDs) using organo-silicon as source compounds have been examined in terms of the mechanism of the activation steps and film formation. The deposition experiments performed for different configurations of the aftergrow tube (straight, with a light trap, and a radical trap) prove how the source materials are effective for the film formation. In the SiC film formation, it is shown that hydrogen radicals act on the Si-Si bond of the source material. In SiO_2 film formation, hydrogen and helium can not be effective for the SiO_2 formation, but argon, nitrogen and oxygen plasma radicals are effective for dissociationof tetraethoxysilane (TEOS). Furthermore, it is found that highly excited oxygen radical O(^1D) is valuable for the preparation of a high quality film without H_2O.Deposition of wide bandgap film includcing nitrogen was studied by a remote plasma method by using hexamethyldisilazane (HMDZ). Nitrogen plasma was used to intiate the deposition reaction by decomposing the organosilicon monomer. All the films obtained are optically transparent and have a band gap around 4eV.Electrical resistivities of the films lie in the region of 10^<14>-10^<15> ohm cm.In future, these research of CVD using organo-silicon and organo-metal are more required for the preparation of wide gap insulating film.

使用有机硅作为源化合物的远程氢等离子体化学蒸气沉积（RHPCVD）已根据激活步骤和膜形成的机制进行了研究。进行的沉积实验针对余生管的不同构型（直，带有轻陷阱和一个自由基陷阱）证明了源材料如何有效地形成膜。在SIC膜的形成中，表明氢自由基作用于源材料的Si-Si键。在SIO_2膜形成中，氢和氦对SIO_2的形成不能有效，但是氩，氮和氧血浆自由基对四乙氧基硅烷（TEOS）的解离有效。此外，发现高度激发的氧自由基O（^1D）对于没有H_2O的高品质膜的制备很有价值。通过远程等离子体方法研究了宽带胶片的沉积，包括使用己酰胺甲基苯二甲烷（HMDZ）研究了包括氮的宽带膜。氮血浆通过分解有机硅单体的分解来探究沉积反应。所获得的所有胶片都是光学透明的，并且具有4ev周围的带隙。膜的电阻率在10^<14> -10^<15> ohm cm.cm.cm.in的未来，这些CVD使用有机-silicon的研究制备宽间隙绝缘膜需要更需要有机金属。