HAR/Nano-ICP Dry Etching Process Unit

HAR/Nano-ICP 干式蚀刻工艺装置

• 批准号: 435273093
• 金额: --
• 依托单位: Technische Universität Braunschweig
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/435273093?language=en
• 关键词: HAR; Nano; ICP; Dry; Etching

The ICP dry etching technique is a basic microfabrication method for silicon. The etching process is anisotropic and enables to create trenches, holes and recesses with almost any shape and largely vertical flanks. Together with the anisotropic wet chemical etching technique, where the etching rate is oriented to the crystal planes, ICP dry etching offers a very high design variety for micromechanical structures made of silicon.Silicon bulk micromechanics is a central topic at IMT, which plays a major role in almost all research projects. However, the ICP dry etching system purchased in 1995 has now been irreparably damaged and has failed completely. In addition, the requirements regarding the minimum structure width, the aspect ratio, an exactly adjustable and uniform etching depth and the orthogonality of the flank angle have increased significantly. Furthermore, modern RIE/DRIE etching systems offer high selectivity when using resist masks, powerful ICP sources, integrated process cooling and fast sample infeed and outfeed. Vertical structural flanks and a transition as perpendicular as possible between the flanks and the etching ground are favored, among other things, by a very fast gas change. In order to carry out current and planned research projects successfully and with state-of-the-art industrial technology, it is therefore essential to procure a modern, high-performance HAR/Nano-ICP dry etching system that meets the increased requirements.

ICP干蚀刻技术是硅的基本微加工方法。蚀刻过程是各向异性的，可以创建几乎所有形状和大部分垂直侧面的沟渠，孔和凹陷。 ICP Dry Etching与蚀刻速率的各向异性湿化学蚀刻技术一起为晶体平面提供了非常高的设计品种，可用于由硅制成的微机械结构。SiliconBumk Micromegricics在IMT上是IMT的核心主题，它在几乎所有研究项目中都起着重要作用。但是，1995年购买的ICP干燥蚀刻系统现在已被无法弥补，并且已经完全失败了。此外，关于最小结构宽度，纵横比，准确可调且均匀的蚀刻深度以及侧面角正交性的要求显着增加。此外，现代RIE/DRIE蚀刻系统在使用抗性掩码，功能强大的ICP源，集成过程冷却以及快速样品输液和外食时具有很高的选择性。除其他外，垂直的结构侧面和在侧面和蚀刻地面之间尽可能垂直的过渡是通过非常快速的气体变化而偏爱的。因此，为了成功地进行当前和计划的研究项目，并使用最先进的工业技术，因此必须采购现代，高性能的HAR/NANO-ICP干燥蚀刻系统，以满足增加的要求。