Interpretation of the Appearance of the Antiferroelectric Phase in Smectic Liquid Crystals and the Application for Display Device

近晶液晶中反铁电相的出现及其在显示器件中的应用的解释

• 批准号: 04452089
• 负责人: TAKEZOE Hideo
• 金额: $ 4.48万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452089/
• 关键词: Antiferroelectric liquid crystal; Smectic liquid crystal; Display device; X-ray diffraction; Conoscopic image; Dimer

To clarify the cause of the appearance of the antiferroelectricity in smectic liquid crystals, we perfored two kinds of experiments : (1) We drew phase diagrams of binary mixtures which show the antiferroelectric phase in order to discuss the strength of antiferroelectricity. (2) We measured the higher order X-ray diffraction due to smectic layr order, determined the layr order parameter and discussed the cause of the antiferroelectricity from the microscopic point of viewWe constructed conoscopic observation system using CCD camera and image processor. Using this system, we drew phase diagrams of binary mixtures, one of which has stronger antiferroelectric strengh and the lest of which has stronger ferroelectric strengh. Based on the diagrams, we proposed the model of "devil's staircase", i.e., emergence of various subphases due to the competition of ferroelectricity stabilized by excluded volume effect and antiferroelectricity stabilized by molecular dimerization.We accurately measured the higher order X-ray diffraction due to the smectic layr structure and determined the layr order parameter, then found that the order parameter increases discontinuously at the phase transition point from smC** to SmCA**. This fact suggests that the layr structure is no longer sinusoidal as usual, but is somewhat one-dimensional lattice in the antiferroelectric phase. We also clarified that the layr thickness in SmCA** is thinner than that in SmC**. These facts supports the model of molecular dimerization as the cause of the appearance of antiferroelecticity

为了阐明近晶液晶中出现反铁电性的原因，我们进行了两种实验：（1）绘制了显示反铁电相的二元混合物的相图，以讨论反铁电性的强度。 (2)测量了近晶层序引起的高阶X射线衍射，确定了层序参数，并从微观角度讨论了反铁电性的成因。利用CCD相机和图像处理器构建了锥光观察系统。利用该系统，我们绘制了二元混合物的相图，其中一种具有较强的反铁电强度，另一种具有较强的铁电强度。基于这些图，我们提出了“魔鬼阶梯”模型，即由于排除体积效应稳定的铁电性和分子二聚化稳定的反铁电性的竞争而出现各种子相。我们准确地测量了由于排除体积效应稳定的铁电性和分子二聚化稳定的反铁电性的竞争。通过对近晶层结构的分析，确定了层序参数，发现在从 smC** 到 SmCA** 的相变点，序参数不连续增加。这一事实表明，层结构不再像平常那样是正弦曲线，而是反铁电相中的一维晶格。我们还澄清，SmCA** 中的层厚度比 SmC** 中的层厚度薄。这些事实支持分子二聚化模型作为反铁电性出现的原因

项目成果

Y.Takanishi et al.: "Tristable Switching in SmO^* of 1-Methylheptyl-Terephthalidene-Bis-Aminocinnamate(MHTAC)and Its Miscibility with SmC_A^* Antiferroelectric chiral Smectic LC" Jpn.J.Appl.Phys.32. 4605-4610 (1993)

Y.Takanishi 等人：“1-甲基庚基对苯二甲脒-双氨基肉桂酸酯 (MHTAC) 的 SmO^* 中的三稳态切换及其与 SmC_A^* 反铁电手性近晶液晶的混溶性”Jpn.J.Appl.Phys.32。

T.Fujikawa et al.: "Construction of Dynamic Conoscope Observation System Using CCD Camera and Imaging Processor" Jpn.J.Appl.Phys.32. 985-988 (1993)

T.Fujikawa 等人：“使用 CCD 相机和成像处理器构建动态锥光观察系统”Jpn.J.Appl.Phys.32。

A.Ikeda et al: "Study on Molecular Dimerization Inducing the Autiferroelectvichiquid Crystalline Phase by Measuring the Swectic Layer Thickness in Various Compounds" Jpn.J.Appl Phys.32. L97-L100 (1993)

A.Ikeda 等人：“通过测量各种化合物中的水层厚度来诱导 Autiferroelectvichiquid 结晶相的分子二聚化研究”Jpn.J.Appl Phys.32。

T.Fujikawa et al.: "Construction of Dynamic Conoscope Observation System Using CCD Camera and Image Processor" Jpn.J.Appl.Phys.32. 985-988 (1993)

T.Fujikawa 等人：“使用 CCD 相机和图像处理器构建动态锥光观测系统”Jpn.J.Appl.Phys.32。

Y.Takanishi et al.: "Visual Observation of Dispiration in Liquid Crystals" Phys.Rev.B. 45. 7684-7689 (1992)

Y.Takanishi 等人：“液晶中扩散的视觉观察”Phys.Rev.B。