Implantable Pressure Measurement System

植入式压力测量系统

基本信息

批准号：
63850084
负责人：
ESASHI Masayoshi
金额：
$ 5.38万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1989
项目状态：
已结题

项目摘要

An implantable pressure measurement system was studied. The results of the research are as follows; 1. A new electrical feedthrough structure for an implantable pressure sensors has been developed. This structure is indispensable for the absolute pressure sensor. It enables air-tight seal at the output read part and makes the packaging easy. The Pyrex glass-to-silicon anodic bonding, free from residual stress, and electrochemical discharge drilling which is useful to engrave narrow through-hole were developed. 2. A piezoresistive pressure sensor, using the new feedthrough structure was fabricated. The size of the sensor is 1.8mmxl.8mm and 580um in thickness. The diaphragm size is 0.8mmxO.8mm, and the depth of reference cavity is 3um.The sensitivity was 13uV/mmHg/Vs when the diaphragm thickness was 9um. 3. A capacitive relative pressure sensor for a catheter was fabricated. The size was 0.7x3.5xO.4mm. The normalized pressure sensitivity was 3.45xlO-4/mmHg and the temperature coefficient was 0.17mmHg/ C. 4. An integrated silicon capacitive pressure sensor has been fabricated. The size is 2.2mmxl.7mm and 500um in thickness. The CMOS capacitance to frequency converter circuit is integrated on the same silicon chip. output of the circuit is taken through glass holes which are at the opposite side of the silicon diaphragm. Output frequency is detected by monitoring the supply current in the power line, so that only two lead wires are necessary for the sensor. The thermal zero shift is less than 0.1%F.S./ C. The sensitivity is -31.3Hz/mmHg (0.048%F.S./mmHg). The power dissipation is 86.5uW. The sensor is suitable for implantable telemetry system because of its good stability, low power deception, and simple output signal detection.Design and fabrication principle of implantable pressure sensing system was established.

研究了植入式压力测量系统。研究结果如下： 1. 开发了一种用于植入式压力传感器的新型电馈通结构。这种结构对于绝对压力传感器来说是不可缺少的。它可以在输出读取部分实现气密密封，并使包装变得容易。开发了无残余应力的 Pyrex 玻璃与硅阳极键合，以及可用于雕刻窄通孔的电化学放电钻孔。 2. 制作了一种采用新型馈通结构的压阻式压力传感器。传感器尺寸为1.8mmxl.8mm，厚度为580um。膜片尺寸为0.8mmxO.8mm，参考腔深度为3um。当膜片厚度为9um时，灵敏度为13uV/mmHg/Vs。 3.制作了用于导管的电容式相对压力传感器。尺寸为0.7x3.5xO.4mm。归一化压力灵敏度为3.45×10-4/mmHg，温度系数为0.17mmHg/℃。4、制作了集成硅电容式压力传感器。尺寸为2.2mmxl.7mm，厚度500um。 CMOS电容频率转换器电路集成在同一硅芯片上。电路的输出通过硅膜片另一侧的玻璃孔获取。通过监测电源线中的供电电流来检测输出频率，因此传感器只需要两根引线。热零移小于0.1%F.S./℃。灵敏度为-31.3Hz/mmHg（0.048%F.S./mmHg）。功耗为86.5uW。该传感器具有稳定性好、欺骗功耗低、输出信号检测简单等特点，适用于植入式遥测系统。建立了植入式压力传感系统的设计与制作原理。