Helium-like impurity centers in silicon and germanium: Infrared light interaction, non-equilibrium distributions and optoelectronic applications

硅和锗中的类氦杂质中心：红外光相互作用、非平衡分布和光电应用

• 批准号: 389056032
• 负责人: Professor Dr. Heinz-Wilhelm Hübers
• 金额: --
• 依托单位: Institut für Physik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2018
• 资助国家: 德国
• 起止时间: 2017-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/389056032?language=en
• 关键词: Helium; like; impurity; centers; silicon

The joint goal of the applicant groups is to investigate the potential of helium-like impurity centers in the elemental semiconductors silicon and germanium for optoelectronic applications in the mid-infrared wavelength range. The activation energies of such impurities fall into the infarred spectral region. In particular, we want to study optical, electro-optical and magneto-optical as well as non-equilibrium properties and dynamical processes of double donor centers in silicon and double and triple acceptors in germanium. The temporal and spectral characteristics of such materials depend on fundamental features such as the nature of the electrically active centers formed in the semiconductor after doping, the structure of the excited levels of all active impurities, including their spin-orbit and spin-triplet states, the capture and intracenter relaxation of non-equilibrium charge carriers. These are not all known or not completely understood for the materials. The largest intracenter transitions of helium-like impurity centers have energies exceeding the characteristic energy of the optical phonon of the host lattice. This is expected to slow down the intracenter relaxation and, therefore, the whole capture process. Additionally, the forbidden triplet-singlet decay may result in long relaxation times for those electrons ending in such triplet states. These features will be experimentally investigated by two-color time-resolved spectroscopy and theoretically modelled. A special focus is on the technological aspects of crystal growth and doping of the semiconductors.

申请人小组的共同目标是研究元素半导体硅和锗中的类氦杂质中心在中红外波长范围内的光电应用中的潜力。此类杂质的活化能落入红外光谱区域。特别是，我们想要研究硅中双供体中心和锗中双和三受体的光学、电光和磁光以及非平衡特性和动力学过程。此类材料的时间和光谱特性取决于基本特征，例如掺杂后在半导体中形成的电活性中心的性质、所有活性杂质的激发能级的结构，包括它们的自旋轨道和自旋三重态，非平衡载流子的捕获和中心内弛豫。这些材料并非全部已知或未完全理解。类氦杂质中心的最大中心内跃迁的能量超过主晶格光学声子的特征能量。预计这会减慢中心内松弛，从而减慢整个捕获过程。此外，禁止的三重态-单重态衰变可能会导致以这种三重态结束的电子的弛豫时间较长。这些特征将通过双色时间分辨光谱进行实验研究并进行理论建模。特别关注半导体晶体生长和掺杂的技术方面。

项目成果

Even‐Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in Silicon

硅浅供体中心的红外发射、吸收和拉曼散射光谱中的偶宇称激发态

• DOI: 10.1002/pssb.201800514
• 发表时间: 2019
• 期刊: physica status solidi (b)
• 作者: S. G. Pavlov; N. V. Abrosimov; V. B. Shuman; L. М. Portsel; А. N. Lodygin; Yu. A. Astrov; R. Kh. Zhukavin; V. N. Shastin; K. Irmscher; A. Pohl;H.
• 通讯作者: H.

Cascade capture of charge carriers in highly doped semiconductors

高掺杂半导体中载流子的级联捕获

• DOI: 10.1063/1.5035301
• 发表时间: 2018-08-28
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: E. Orlova;R. Kelsall;N. Deßmann;S. Pavlov;H. Hübers;R. Zhukavin;V. Shastin
• 通讯作者: V. Shastin

Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

掺杂硅中基于反转的激光和拉曼激光的竞争

• DOI: 10.1103/physrevx.8.041003
• 发表时间: 2018
• 期刊: Physical Review X
• 影响因子: 12.5
• 作者: S. G. Pavlov; N. Deßmann; B. Redlich; A. F. G. van der Meer; N. V. Abrosimov; H. Riemann; R. Kh. Zhukavin; V. N. Shastin;H.
• 通讯作者: H.

Further investigations of the deep double donor magnesium in silicon

硅中深层双施主镁的进一步研究

• DOI: 10.1103/physrevb.98.045202
• 发表时间: 2018
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: R. J. S. Abraham; A. DeAbreu; K. J. Morse; V. B. Shuman; L. M. Portsel; A. N. Lodygin; Yu. A. Astrov; N. V. Abrosimov; S. G. Pavlov; H.;M. L. W. Thewalt
• 通讯作者: M. L. W. Thewalt

Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in silicon

双供体镁与硅中的 III 族受体配对形成的浅供体配合物

• DOI: 10.1103/physrevb.99.195207
• 发表时间: 2019
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: R. J. S. Abraham; V. B. Shuman; L. M. Portsel; A. N. Lodygin; Yu. A. Astrov; N. V. Abrosimov; S. G. Pavlov; H.;M. L. W. Thewalt
• 通讯作者: M. L. W. Thewalt