Quantitative analytical spectroscopy of ultra-high purity germanium crystals

超高纯锗晶体的定量分析光谱

• 批准号: 509105207
• 负责人: Professor Dr. Heinz-Wilhelm Hübers
• 金额: --
• 依托单位: Institut für Physik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/509105207?language=en
• 关键词: Quantitative; analytical; spectroscopy; ultra; purity

High-purity and by design low-doped and co-doped semiconducting crystals are of great interest for material research. This includes techniques to produce such crystals as well as to characterize them. Such high quality crystals are important for both, fundamental and applied research and development. Undoped germanium (Ge) is widely used as optical windows, filters as well as detectors of ionizing radiation, particularly x-rays and gamma rays. Low-doped Ge crystals are excellent natural analogue of a single-electron conducting medium, where many physical models dealing with a single-electron approach can be experimentally verified. To date, mostly Ge-based low-dimensional materials (quantum dots and structures) are considered for single-electron systems and quantum technologies. Low-doped Ge or Ge with residual doping offers a unique possibility to experimentally access the theoretical single-electron model, which is a main approach for theoretical modelling energy spectra of electrically active impurities. The project is a joint effort of the research groups at the Leibniz-Institut für Kristallzüchtung (IKZ) and Humboldt-Universität zu Berlin (HUB). Both teams join in order to make the best use of their complementary expertise. The focus of the IKZ proposal is on making high-quality Ge crystals, with respect to the Ge host lattice, dopants and isotopic composition. The HUB team focusses on the spectroscopic characterization of the Ge crystals (e.g. optical constants, concentration of dopants). The goal of the HUB part of this cooperation project is to establish high-sensitivity analytical spectroscopy for characterization of ultra-pure, low-doped and undoped monocrystalline Ge. The project will deliver high-purity crystals with variable isotopic content. These crystals are precisely analyzed by measuring their energy spectra at ultra-low concentrations of electrically active impurities. Besides that, it will provide insights into impurity interactions with the host lattice, local modes, crystal defects and influence from isotope content.

高纯度、低掺杂和共掺杂半导体晶体对材料研究非常感兴趣，这包括生产此类晶体以及表征此类高质量晶体的技术对于基础研究和应用研究都很重要。未掺杂的锗 (Ge) 广泛用作光学窗口、滤光片以及电离辐射探测器，特别是 X 射线和伽马射线，是极好的天然类似物。一种单电子导电介质，可以通过实验验证许多处理单电子方法的物理模型迄今为止，大多数基于Ge的低维材料（量子点和结构）被考虑用于单电子系统和量子技术。低掺杂Ge或带有残留掺杂的Ge为通过实验获得理论单电子模型提供了独特的可能性，这是电活性杂质能谱理论建模的主要方法该项目是该项目研究小组的共同努力。莱布尼茨水晶研究所 (IKZ) 和柏林洪堡大学 (HUB) 的加入是为了充分利用他们的互补专业知识，IKZ 提案的重点是制造高质量的锗晶体。 HUB 团队专注于 Ge 晶体的光谱表征（例如，Ge 晶体）。该合作项目的 HUB 部分的目标是建立用于表征超纯、低掺杂和未掺杂单晶 Ge 的高灵敏度分析光谱。可变的同位素含量。通过测量超低浓度电活性杂质的能谱来精确分析这些晶体，此外，它还可以深入了解杂质与主体的相互作用。晶格、局部模式、晶体缺陷和同位素含量的影响。