Tunable narrowband thermal emitter for minimization of disease screening device

用于最小化疾病筛查设备的可调谐窄带热发射器

• 批准号: 19J13668
• 负责人: 王 智宇
• 金额: $ 1.34万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2019
• 资助国家: 日本
• 起止时间: 2019-04-25 至 2021-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-19J13668/
• 关键词: High-Q thermal emission; thermal emission; ultra-narrow bandwidth; tunable wavelength; mid-infrared

Within this year, we have conducted the optimization, simulation, fabrication, and experiment processes. First, we optimized the structure by adjusting the DBR layer number and the DBR material, for a fully developed optical Tamm state sustained within the structure. As a result, through simulation, we demonstrated a pronounced resonance peak in emittance spectrum with a quality factor (Q-factor) as large as 1908 . Ge was used, not only as a material of the DBR, but also for wavelength tunability taking advantage of its thermo-optic effect. The temperature sensitive Ge layer was designed at the position sustaining the maximum electric field, in order to make the index change in Ge maximally influence the optical behavior of the whole structure. Then, the device has been fabricated using RF sputtering. To reduce its internal stress, we also annealed the sample after deposition. The emittance measurement was carried out at temperatures up to 150 C. Upon heating, sharp peak is observed in the emittance spectrum with a large Q-factor around 780.

在今年，我们进行了优化，模拟，制造和实验过程。首先，我们通过调整DBR层数和DBR材料来优化结构，该结构中维持的完全开发的光学TAMM状态。结果，通过模拟，我们在发射光谱中证明了一个明显的共振峰，其质量因子（Q-Factor）最大为1908年。使用GE不仅用作DBR的材料，而且还用于利用其热光效应的波长可调性。温度敏感的GE层是在维持最大电场的位置上设计的，以使GE的索引变化最大地影响整个结构的光学行为。然后，使用RF溅射制造了该设备。为了减少其内部应力，我们还在沉积后退火了样品。在最高150 C的温度下进行发射率测量。加热后，在发射光谱中观察到尖峰，在780左右的大Q因子中观察到峰值。