Near-infrared GaN quantum cascade laser for the next-generation self-driving car

用于下一代自动驾驶汽车的近红外GaN量子级联激光器

• 批准号: 21H01376
• 负责人: 王 利
• 金额: $ 9.9万
• 依托单位: Institute of Physical and Chemical Research
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2021
• 资助国家: 日本
• 起止时间: 2021-04-01 至 2025-03-31
• 项目状态: 未结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21H01376/
• 关键词: laser; GaN/AlGaN quantum wells; GaN QCLs; quantum cascade laser; terahertz; MBE epitaxy; semiconductor; laser; GaN/AlGaN quantum wells; GaN QCLs; quantum cascade laser; terahertz; MBE epitaxy; semiconductor

1.the feasible QCLs design with improved robustness on strain relaxation is predicted by using nonequilibrium green’s function (NEGF) models. We update our models by including the strain relaxation parameters along the quantum wells epitaxy directions, and also the threading dislocation defects scattering is also developed to convince the prediction; 2. By growing um-thick GaN/AlGaN cascade quantum wells, we confirm the current-bias characteristic consistently with the calculation of NEGF models. We also observe the intersubband electroluminescence at targeted frequency. This results confidences the next step for laser; 3. The laser cavity structures processing has been ongoing.

1.通过使用非平衡绿色功能（NEGF）模型，可以预测可行的QCLS设计具有提高鲁棒性的鲁棒性。我们通过包括沿量子井外延方向的应变弛豫参数来更新模型，还开发了螺纹错位缺陷散射以说服预测。 2。通过种植um厚的gan/algan级联量子井，我们确认了与NEGF模型的计算一致的当前偏见特征。我们还观察到目标频率下的覆盖带电致发光。此结果证实了激光的下一步； 3。激光腔结构的处理一直在进行。